Which Mosfet is best for audio amplifier?
Answers from top 19 papers
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Papers (19) | Insight |
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23 May 2010 37 Citations | To the best of our knowledge, this is the best combination of output power and bandwidth for any solid-state MMIC amplifier operating up to the full Ku-band. |
51 Citations | The results show that an optimized design of the per-finger-width is necessary for an rf MOSFET to achieve the lowest effective R/sub g/, which is desirable in rf applications. |
Conventional approaches to audio power amplifiers have a rather limited efficiency, and are therefore not necessarily the best choice for integrated circuits. | |
18 Oct 2004 | In this paper, we propose a low cost step-gate-oxide (SGO) MOSFET that is suitable for RF power amplifiers. |
03 Apr 2012 | A Class-D amplifier (CDA) is best suitable for audio mobile applications due to its high-power efficiency, thus enabling to remove a bulky heat sink. |
18 Jun 2012 25 Citations | For LOP applications including the effect of parasitic elements, the HTFET presents superior energy efficiency and desired low-power analog performance for VDD<;0.6V, while MOSFET is superior for VDD>;0.6V. |
20 Jun 2004 | With the experimental results, usefulness of the proposed amplifier is confirmed. |
25 Citations | To our best knowledge, the developed PA shows the highest gain ever achieved for W-band CMOS amplifier. |
15 Mar 2012 | A new modified driver stage is proposed which drives the power amplifier efficiently. |
The proposed optimization method is experimentally proven in an audio power amplifier leading to THD figures that are comparable to the state of the art. | |
11 Jun 1998 | The amplifier's bandwidth is the broadest ever reported for a Si MOSFET technology. |
35 Citations | This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-/spl mu/m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance. |
23 May 2010 22 Citations | To the authors' best knowledge, this is the power amplifier with the highest gain and with good output power in K-band using standard CMOS process. |
It is shown that BSA-DE-based design technique for each amplifier circuit yields the least MOS transistor area, and each designed circuit is shown to have the best performance parameters such as gain, power dissipation, etc., as compared with those of other recently reported literature. | |
The performance of the power amplifier is better than any other CMOS power amplifier reported and comparable to commercially available power amplifiers in other technologies. | |
Comparison with other recent designs shows that the proposed amplifier has the lowest P/sub d/ and the best noise performance. | |
01 Nov 2008 | This work shows that the hysteresis solution offers both lower power consumption and higher audio performances for embedded audio application. |
Thus, the efficiency and power density of the proposed audio amplifier system can be improved. | |
48 Citations | A comparison of the performance of this audio amplifier with that of some commercial class-D audio amplifiers, reveals that our design can seriously compete with some of the ICs leading the market at a lower cost. |