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The transistor design could provide the basis for low-noise radiation-tolerant circuits.
Journal ArticleDOI
John M. Shannon, Ed Gerstner 
86 Citations
The authors introduce a source-gated transistor that overcomes some of the fundamental limitations of the field-effect transistor.
This is to the authors' knowledge the organic circuit with the highest transistor count ever demonstrated.
This circuit exhibits the high DC-RF conversion efficiency that is typical of field-effect transistor oscillators.
We concluded the circular-gate transistor is more tolerant to radiation than the rectangular-gate transistor.
Our measurements indicate that with further improvements, the radio-frequency single-electron transistor could reach the shot-noise limit estimated to be about 1 ℏ.
Thus, it allows studying the inhomogeneous RF power distribution and other effects within the transistor.
It is able to obtain transistor networks with transistor count near to the best case of other methods presented in the literature.

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