Why h parameter model is preferred over other models in transistor amplifiers?
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We propose a new symmetrical heterojunction FET (HFET)/MESFET model to predict intermodulation distortion in amplifiers and resistive mixers. | |
09 Sep 1991 22 Citations | It is shown that when the model for the intrinsic transistor is properly extended with parasitic elements, as has been done in the MEXTRAM model, HF small-signal transistor behavior can be correctly simulated up to the highest frequencies of practical interest.<<ETX>> |
18 Citations | The model provides an accurate continuous description of the transistor behavior in all operating regions. |
7 Citations | As a major advantage compared with earlier models, this model takes into account the non-quasistatic and transmission-line effects of the transistor. |
38 Citations | The model provides an accurate description of the transistor behavior in all operating conditions. |
37 Citations | Variations of transistor characteristics can be translated into equivalent variations of compact model parameters by only one fitting step without repeating the parameter extraction procedure multiple times. |
07 Nov 2002 | It is demonstrated that the electrical behavior of the proposed model matches in a satisfactory way the defective transistor behavior. |
Numerical results indicate that the proposed method can generate process-dependent transistor-level models with reasonable modeling accuracy. | |
35 Citations | On the other hand, the DD model fails in this region and substantially overestimates the base transit time bearing the possibility of wrong guidelines for transistor design optimization. |
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