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Acoustic interferometer

About: Acoustic interferometer is a research topic. Over the lifetime, 1493 publications have been published within this topic receiving 19355 citations.


Papers
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Proceedings ArticleDOI
01 Jan 1983
TL;DR: In this article, an acoustic beam is launched into the crystal bulk at such an angle that the beam reflected off the crystal bottom is redirected to the s urface and intercepted by a receiving IDT.
Abstract: Recently, several authors have reported on a new type geometry which is a higher-frequency extension of the SSBW. For this device, an acoustic beam is launched into the crystal bulk at such an angle that the beam reflected off the crystal bottom is redirected to the s urface and intercepted by a receiving IDT. The characteristics of the reflected bulk wave (RBW) delay line turn out to be significantly different from either the SAW or SSBW. These include (1) a frequency bandwidth directly proportional to transducer length, (2) a center frequency determined not by finger-to-finger spacing but rather by the ratio of transducer separation to crystal thickness, (3) a non-resonant radiation resistance, (4) the capability to synthesize filter designs in which the frequency response is proportional to the correlation of the individual transducer finger weightings, and (5) the capability to modify temperature stability by change of transducer separation and crystal thickness.

1 citations

Book
02 May 1973
TL;DR: In this article, the authors derived a power balance and a reciprocity relation for diffraction problems in a piezo-electric solid, and showed that these relations can be obtained from certain integral equations.
Abstract: In this paper the in tegra l equat ion formulation of scat ter ing or diffraction problems associated w i t h wave mot ions in a piezo-electric solid is investigated. Star t ing from t h e basic equat ions a power ba lance and a reciprocity relation are derived. In the power balance the mechanical and the electric power flow density occur . The reciprocity relation serves as a s ta r t ing point for the integral equa t ion formulation of diffraction problems. In the reciprocity relation, two possible bu t different field s i tuat ions occur, In one of them the field quan t i t i e s are chosen to be t he ac tua l ones, in t he other t he field quanti t ies are chosen to be t he auxil iary ones t h a t are generated by either an electric p o i n t charge or a mechanical point force. In this way, Helmholtz type of in tegra l representa t ions for the electric potent ia l and the mechanical d isplacement are obta ined. For t he technically impor tan t configuration of a piezo-electric component excited by a finite number of electrodes, t he homogeneous, linear relations between t h e potent ia ls on t he electrodes and the currents fed into these are represented th rough the impedance ma t r ix . I t is shown t h a t t he elements of this impedance mat r ix can be obta ined from certain integral equations, A method for ob ta in ing the auxil iary fields used in the integral representat ions for the electric potent ia l and the mechanical displacement is outlined in an append ix . Nomenclature Latin symbols Ci,};p,Q stiffness tensor a t cons tant electric field Di electric flux densi ty El electric field vector etj-p piezo-electric tensor

1 citations

Journal ArticleDOI
TL;DR: In this article, the surface acoustic wave velocity and electromechanical coupling coefficient for the layer-substrate structure have been extracted and calculated using material parameters available from literature and the attenuation of guided optical wave along the propagation track in AlxGa1-xN layers has been measured using the CCD imaging technique.
Abstract: AlxGa1-xN layers grown by MOCVD on sapphire substrates have been tested using the surface acoustic wave and guided optical wave techniques. Samples with molar fraction of Al up to 0.36 have been investigated. The parameters S11 of single surface acoustic wave transducers and S12 of two-port devices have been measured with the network analyzer. The values of the surface acoustic wave velocity and electromechanical coupling coefficient for the layer-substrate structure have been extracted and calculated using material parameters available from literature. The attenuation of guided optical waves along the propagation track in AlxGa1-xN layers has been measured using the CCD imaging technique. The attenuation dependence on the mode order and layer thickness has been studied. Our results show that the properties of AlxGa1-xN that determine surface acoustic wave and guided optical wave propagation are similar to the properties of GaN films within a relatively wide range of x up to x =0.36.

1 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20223
20182
201722
201627
201529
201433