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AgInSbTe
About: AgInSbTe is a research topic. Over the lifetime, 130 publications have been published within this topic receiving 1825 citations.
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TL;DR: These structures suggest a bond-interchange model, where a sequence of small displacements of Sb atoms accompanied by interchanges of short and long bonds is the origin of the rapid crystallization of a-AIST, which differs profoundly from crystallization in a-GST.
Abstract: Phase-change materials are key components in rewritable optical disks and are promising for non-volatile electronic memories. The very different structure and ultrafast recrystallization dynamics of another class of phase-change materials, Sb–Te-based alloys, now suggests their use in future memory applications.
231 citations
TL;DR: Deeper understanding is obtained based on the temperature dependence of the crystal growth velocity of the phase-change material AgInSbTe, as derived from laser-based time-resolved reflectivity measurements, which reveals that the supercooled liquid phase must have an extremely high fragility.
Abstract: Phase-change materials are the basis for next-generation memory devices and reconfigurable electronics, but fundamental understanding of the unconventional kinetics of their phase transitions has been hindered by challenges in the experimental quantification. Here we obtain deeper understanding based on the temperature dependence of the crystal growth velocity of the phase-change material AgInSbTe, as derived from laser-based time-resolved reflectivity measurements. We observe a strict Arrhenius behaviour for the growth velocity over eight orders of magnitude (from ~10 nm s−1 to ~1 m s−1). This can be attributed to the formation of a glass at elevated temperatures because of rapid quenching of the melt. Further, the temperature dependence of the viscosity is derived, which reveals that the supercooled liquid phase must have an extremely high fragility (>100). Finally, the new experimental evidence leads to an interpretation, which comprehensively explains existing data from various different experiments reported in literature. Fundamental understanding of the kinetics of phase transitions in phase-change materials has been hindered by challenges in the experimental quantification. Via an in situ laser reflectivity technique, Salinga et al.measure the crystal growth kinetics, revealing an extremely high fragility in the supercooled liquid.
177 citations
TL;DR: In contrast to amorphous AgInSbTe and Ge4 Sb1 Te5, which upon heating crystallize to a single phase within a small temperature interval, the crystallization of ammorphous Ge2 Sb2 Te5 is complicated by a subsequent cubic-to-hexagonal transformation as discussed by the authors.
Abstract: Sputtered amorphous Ag0.055 In0.065 Sb0.59 Te0.29, Ge4 Sb1 Te5, and Ge2 Sb2 Te5 thin films were studied by differential scanning calorimetry. The crystallization temperature and the heat of crystallization of the amorphous phases, the melting temperature and the heat of fusion of the crystalline phases, and the heat capacities of crystalline and liquid AgInSbTe were measured. The entropies of fusion are large (⩾2R), which suggests a change of bonding type between liquid and crystal. In contrast to amorphous AgInSbTe and Ge4 Sb1 Te5, which upon heating crystallize to a single phase within a small temperature interval, the crystallization of amorphous Ge2 Sb2 Te5 is complicated by a subsequent cubic-to-hexagonal transformation. No thermal evidence of a glass transition was found below the crystallization temperature. The ratio of the glass transition temperature (approximated as the crystallization temperature) to the liquidus temperature is 0.49–0.56, which identifies the materials as marginal glass former...
118 citations
TL;DR: In this article, the phase change optical disc with the Ag-In-Sb-Te system has been developed for CD rewritable compact disc (CD-rewritable) with high performance at both CD-velocity (CD1X) and double CD-level velocity (CD2X).
Abstract: Aiming to obtain a rewritable compact disc (CD-rewritable) with high performance at both CD-velocity (CD1X) and double CD-velocity (CD2X), the phase change optical disc with the Ag-In-Sb-Te system has been developed. In the one-pass overwriting mode with eight-to-fourteen modulation, high carrier-to-noise ratio, wide power margin and high erase ratio have been obtained at both velocities. As for stability, we acquired a satisfactory result in the read-out test of 106 cycles with read power of 1.5 mW. We conclude that the phase change optical disc with the Ag-In-Sb-Te system is suitable for use at both CD1X and CD2X. Furthermore, the phase change process of the Ag-In-Sb-Te system has also been investigated. The chemical structure of the Ag-In-Sb-Te system in its ordered state was found to be (Ag-Sb-Te)x(In1-ySby)1-x.
109 citations
TL;DR: The biaxial modulus and the linear coefficient of thermal expansion of sputtered amorphous Ge4Sb1Te5, Ge2Sb2Te5 and Ag0.055In0.59Te0.29 thin films were determined from stress versus temperature measurements on two different substrates as mentioned in this paper.
Abstract: The biaxial modulus and the linear coefficient of thermal expansion of sputtered amorphous Ge4Sb1Te5, Ge2Sb2Te5, and Ag0.055In0.065Sb0.59Te0.29 thin films were determined from stress versus temperature measurements on two different substrates. Viscous flow was measured by stress relaxation at constant temperature using wafer curvature measurements. The shear viscosity increased linearly with time, which can be attributed to bimolecular structural relaxation kinetics. The isoconfigurational activation energy was 1.94±0.09 eV for Ge4Sb1Te5, 1.76±0.05 eV for Ge2Sb2Te5, and 1.33±0.09 eV for AgInSbTe. These values scale with the absolute melting temperatures of the material.
82 citations