Aluminium oxide

Abstract: Formation of a porous transparent Al2O3 from aluminium alkoxides has been previously reported. During the process, alkoxides are hydrolyzed and the resultant hydroxide is peptized to a clear sol. The sol then must be gelled and pyrolyzed to 500° C to obtain the aluminium oxide. This paper discusses the gel state and the requirements for the system to retain its integrity during the drying and pyrolysis. Influence of electrolytes on the sol-gel transformation shows that there is a critical electrolyte concentration at which the gelling volume goes through a pronounced minimum. Deviation in either direction of this electrolyte concentration causes a sharp increase in the relative gelling volume and detrimentally effects the capability of the gel to retain its integrity. The sols that gel at concentrations less than ∼4 g equivalent oxide per 100 ml do not retain their integrity during pyrolysis.

Abstract: We have investigated the electronic and geometric structure of a thin oxide film grown by oxidation on NiAl(110) using electron spectroscopic techniques, i.e., LEED, EELS, XPS and ARUPS. This film is inert to adsorption of, respectively reaction with many molecules up to temperatures of about 800 K. It is well ordered as deduced from the LEED pattern and covers the whole surface. We find that the oxide film is about 5 A thick, consisting of aluminium oxide as shown by EELS, XPS and ARUPS. It is most likely formed of two aluminium layers and two quasihexagonal oxygen layers with oxygen surface termination. Since the oxide film is rather thin it only shows a two-dimensional band structure which has been investigated using ARUPS. For the electronic levels of the oxide strong periodic dispersions are observed with bandwidths compatible to dispersion bandwidths calculated for the ΓX direction of α-Al2O3.

Abstract: Atomic-layer-deposited aluminium oxide (Al2O3) is applied as rear-surface-passivating dielectric layer to passivated emitter and rear cell (PERC)-type crystalline silicon (c-Si) solar cells. The excellent passivation of low-resistivity p-type silicon by the negative-charge-dielectric Al2O3 is confirmed on the device level by an independently confirmed energy conversion efficiency of 20·6%. The best results are obtained for a stack consisting of a 30 nm Al2O3 film covered by a 200 nm plasma-enhanced-chemical-vapour-deposited silicon oxide (SiOx) layer, resulting in a rear surface recombination velocity (SRV) of 70 cm/s. Comparable results are obtained for a 130 nm single-layer of Al2O3, resulting in a rear SRV of 90 cm/s. Copyright © 2008 John Wiley & Sons, Ltd.

Abstract: Nanoporous anodic aluminium oxide has traditionally been made in one of two ways: mild anodization or hard anodization. The first method produces self-ordered pore structures, but it is slow and only works for a narrow range of processing conditions; the second method, which is widely used in the aluminium industry, is faster, but it produces films with disordered pore structures. Here we report a novel approach termed "pulse anodization" that combines the advantages of the mild and hard anodization processes. By designing the pulse sequences it is possible to control both the composition and pore structure of the anodic aluminium oxide films while maintaining high throughput. We use pulse anodization to delaminate a single as-prepared anodic film into a stack of well-defined nanoporous alumina membrane sheets, and also to fabricate novel three-dimensional nanostructures.

Abstract: Aluminium nanoparticles have gained importance in the last decade because of their increased reactivity as compared with traditional micron-sized particle. The physics of burning of aluminium nanoparticle is expected to be different than that of micron-sized particles, and the current article is motivated by these differences. We have previously measured the size resolved reactivity of nanoaluminium by single-particle mass spectrometry, to which we now add transmission electron microscope (TEM) and an on-line density measurement. The latter two studies revealed the presence of hollow particles following oxidation of nanoaluminium and indicating the significance of diffusion of aluminium in the overall process. Based on experimental evidence, we believe that aluminium nanoparticle oxidation occurs in two regimes. Prior to melting of aluminium slow oxidation occurs through the diffusion of oxygen through the aluminium oxide shell. Above the melting point, we transition to a fast oxidation regime whereby bot...