Aluminium oxide

About: Aluminium oxide is a research topic. Over the lifetime, 4710 publications have been published within this topic receiving 54153 citations. The topic is also known as: Abramant & Abramax.

Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method

Abstract: Al Al joints and Al Si3N4 joints were manufactured at room temperature by means of the surface activation method. In this procedure, the surfaces to be bonded are sputter-cleaned and activated by argon fast-atom-beam (FAB) irradiation and then brought into contact with each other under a slight pressure. The primary concept of the method is based on the idea that clean metal surfaces are inherently active and react with other elements such as oxygen, nitrogen and carbon, and thus form a strong bonding with ceramics even at room temperature. Therefore it was expected that the method will be effective only in an ultra high vacuum so that the sputtered surfaces remain clean until joining. It was found, however, that such a clean environment is not necessary for joining. Surfaces activated in a vacuum containing some residual gas can be bonded very strongly and do not lose the capacity of adhering even after exposure to the residual gases after sputt-cleaning. It is found by transmission electron microscopy that the interface structure depends remarkably upon the vacuum condition in which the surfaces to be bonded are sputter-cleaned. An intermediate layer consisting of a partially amorphous phase was found in Al Al joints bonded under a vacuum pressure of 10−5Pa, while an Al Al joint without an intermediate layer was formed by ultra high vacuum bonding. It is assumed that oxygen or water in the residual gas of the vacuum was absorbed on the Al surface and dissolved into metal by the argon irradiation. Thus, an amorphous Al O solid solution or a kind of aluminium oxide is formed. Al Si3N4 joints manufactured in a high vacuum from surface activated materials showed also an intermediate layer which was, however, entirely amorphous over the whole interface and was considered to have been formed predominantly on the Si3N4 surface.

Hafnium oxide and aluminium oxide alloyed dielectric layer and method for fabricating the same

Abstract: The present invention relates to a dielectric layer alloyed with hafnium oxide and aluminum oxide and a method for fabricating the same. At this time, the dielectric layer is deposited by an atomic layer deposition technique. The method for fabricating the hafnium oxide and aluminum oxide alloyed dielectric layer includes the steps of: depositing a single atomic layer of hafnium oxide by repeatedly performing a first cycle of an atomic layer deposition technique; depositing a single atomic layer of aluminum oxide by repeatedly performing a second cycle of the atomic layer deposition technique; and depositing a dielectric layer alloyed with the single atomic layer of hafnium oxide and the single atomic layer of aluminum oxide by repeatedly performing a third cycle including the admixed first and second cycles.