Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: In this paper, a wide range of non-crystalline materials, such as the elemental and compound amorphous semiconductors, liquid semiconductor, and oxide glasses, are discussed.
Abstract: We review the bonding in a wide range of non-crystalline materials, such as the elemental and compound amorphous semiconductors, liquid semiconductors and, briefly, some oxide glasses and amorphous silicon dioxide. The review concentrates on the experimental determination of electronic structure from photoemission, optical spectra and core spectra and on its theoretical description, particularly using tight-binding methods. The review also describes the bonding at defects in amorphous semiconductors and in particular that of dopants and hydrogen in hydrogenated amorphous silicon (a-Si:H).
118 citations
TL;DR: In this article, a-Si:H radial junction solar cells with a very thin absorber layer without sacrificing the solar cell performance, while improving its stability, have been developed, achieving an open circuit voltage of 0.80 V, short circuit current density of 16.1 µm 2 and a high power conversion efficiency of 8.14%.
117 citations
TL;DR: In this article, the optical properties of metal nanoparticles are explored as a function of lateral size, shape, aspect ratio and metal type, and simulations based on the discrete dipole approximation are compared with experimental measurements of arrays of arrays fabricated by electron-beam lithography.
Abstract: The optical properties of metal nanoparticles are explored as a function of lateral size, shape, aspect-ratio and metal type. Simulations based on the discrete dipole approximation are compared with experimental measurements of arrays of metal nanoparticles fabricated by electron-beam lithography. Careful selection of experimental parameters ensures minimization of far-field and near-field coupling, and inhomogeneous broadening, thus allowing comparison with single particle simulations. The optical properties of Au nanoparticles are compared with similar Al nanoparticles for each particle type. For solar cell light-trapping applications, we require metal nanoparticles that exhibit extinction peaks near the band-edge region of the absorbing material, as well as low absorption and large optical cross-sections. Al nanoparticles are shown to be of interest for amorphous silicon solar cells, but their applications for polycrystalline solar cells is limited by the presence of an interband region in the near-inf...
117 citations
TL;DR: In this paper, the authors demonstrate this strain relief with amorphous silicon thin-film transistors made on 25/spl mu/m thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
Abstract: Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-/spl mu/m thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
117 citations
PARC1
TL;DR: In this paper, the authors analyzed the capture cross-sections and the tail-state contribution in hydrogenated amorphous silicon and showed that band-tail localization can influence the deep trapping process in an amorphized semiconductor.
Abstract: Disorder and band-tail localization are shown to influence the deep trapping processes in an amorphous semiconductor. The capture cross-section includes a term involving tunnelling from a cluster of tail states near a deep centre. Data for trapping in hydrogenated amorphous silicon is analysed to obtain the capture cross-sections and to identify the tail-state contribution.
117 citations