Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: It is demonstrated that optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high non linearity Re(γ) = 1200W(-1)m(-1), with no degradation over the entire course of experiments.
Abstract: We demonstrate optically stable amorphous silicon nanowires with both high nonlinear figure of merit (FOM) of ~5 and high nonlinearity Re(γ) = 1200W−1m−1 We observe no degradation in these parameters over the entire course of our experiments including systematic study under operation at 2 W coupled peak power (ie ~2GW/cm2) over timescales of at least an hour
117 citations
Patent•
21 Mar 1994
TL;DR: Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film.
Abstract: Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film, or introducing such a catalyst element into the amorphous silicon film by ion implantation and subsequently crystallizing the same by applying heat annealing at an appropriate temperature.
116 citations
TL;DR: In this paper, the effect of texture in Ag/ZnO back reflectors (BRs) on the performance of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells was studied.
Abstract: We have studied the effect of texture in Ag/ZnO back reflectors (BRs) on the performance of hydrogenated nanocrystalline silicon (nc-Si:H) solar cells. While a larger texture provides superior light trapping, it also deteriorates the nc-Si:H quality. We have used total and diffused reflection and atomic force microscopy to evaluate the BR texture. A BR with textured Ag and thin ZnO layers has been found to give the best cell performance. Using the optimized BR, we have achieved an initial active-area efficiency of 10.2% in a nc-Si:H single-junction cell and a stable total-area efficiency of 12.5% in a hydrogenated amorphous silicon/nc-Si:H/nc-Si:H triple-junction cell.
116 citations
TL;DR: In this paper, a five-stage ring oscillator composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate.
Abstract: Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mus/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs
116 citations
TL;DR: In this paper, the authors investigated limitations to the open circuit voltage of n-type amorphous silicon/p-type crystalline silicon heterojunction solar cells and identified the dominant recombination mechanism.
Abstract: This article investigates limitations to the open circuit voltage of n-type amorphous silicon/p-type crystalline silicon heterojunction solar cells. The analysis of quantum efficiency and temperature dependent current/voltage characteristics identifies the dominant recombination mechanism. Depending on the electronic quality of the crystalline silicon absorber, either recombination in the neutral bulk or recombination in the space charge region prevails; recombination at the heterointerface is not relevant. Although interface recombination does not limit the open circuit voltage, recombination of photogenerated charge carriers at the heterointerface or in the amorphous silicon emitter diminishes the short circuit current of the solar cells.
116 citations