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Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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26 Feb 2010TL;DR: A method of forming polycrystalline silicon layer and an atomic layer deposition apparatus used for the same is described in this paper, which includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphus silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least 1 closed portion over the ammorphous silicon layers, irradiating UV light toward the amomorphous silicon surface and the mask using a UV lamp, depositing a crystallization-inducing metal on the amogeneous silicon
Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer
114 citations
TL;DR: Amorphous silicon (a•Si) films are deposited at about 320˚C by a new thermal chemical vapor deposition method as mentioned in this paper, where the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas.
Abstract: Amorphous silicon (a‐Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas. It is found that the photosensitivity of the a‐Si film for AM1 of 100 mW/cm2 exceeds over 106 and that the spin density is as low as 1.5×1016 cm−3 for the film deposited with a rate of several A/s.
114 citations
TL;DR: In this article, an overview on the range of physical parameters (refractive index, optical band gap, conductivity) which can be covered by this material by variation of the deposition conditions is presented.
114 citations
114 citations
01 Mar 2011
TL;DR: In this paper, the authors describe the diamond lattice of crystal silicon as a regular array or lattices, which must be consistent with the underlying chemical bonding properties of the atoms, such as the four covalent bonds of a silicon atom.
Abstract: Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must be consistent with the underlying chemical bonding properties of the atoms. For example, a silicon atom forms four covalent bonds to neighboring atoms arranged symmetrically about it. This “tetrahedral” configuration is perfectly maintained in the “diamond” lattice of crystal silicon.
114 citations