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Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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Patent•
21 May 1997
TL;DR: In this article, a gate-side air-gap structure is provided for MOS devices with an amorphous silicon spacer for forming the sidewall spacer and sealing the air gap.
Abstract: A method of fabricating a MOS device having a gate-side air-gap structure is provided. A nitride spacer for reserving space of the air gap is formed on the substrate adjacent to the gate structure. An amorphous silicon spacer for forming the sidewall spacer and sealing the air gap is formed adjacent to the nitride spacer. The upper portion of the amorphous silicon spacer is heavily doped during the source/drain implantation. After removing the nitride spacer the doped amorphous silicon spacer is oxidized by a wet oxidation process to form a doped oxide spacer. The growing doped oxide spacer will seal the hole for the nitride spacer resulting from the heavily doped upper portion having a higher oxidation rate than that of other portions. Dopants implanted in the amorphous silicon spacer migrate into the substrate and extended ultra-shallow doped regions are formed that reduce the series resistance of the LDD structure.
111 citations
TL;DR: In this paper, the photoconductivity of hydrogenated rf sputtered amorphous Si has been determined as a function of the partial pressure of hydrogen in the sputtering gas and of deposition temperatures up to 450°C.
111 citations
TL;DR: In this article, it was shown that heat treatment in a hydrogen plasma of pure amorphous silicon films prepared by UHV evaporation yields a material with no observable dangling bond ESR signal.
Abstract: It is shown that heat treatment in a hydrogen plasma of pure amorphous silicon films prepared by UHV evaporation yields a material with no observable dangling bond ESR signal. This material has electrical properties similar to films prepared by a glow‐discharge decomposition of silane but a lower hydrogen content as deduced from ir absorption data.
111 citations
PARC1
TL;DR: In this article, the optical absorption of doped and undoped amorphous silicon (a•Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy.
Abstract: The optical absorption of doped and undoped hydrogenated amorphous silicon (a‐Si:H) films ranging from 5 nm to 10 μm was measured using photothermal deflection spectroscopy. The absorption spectra show that there is a high defect layer associated with the surface or interface of the film. From comparison of defect absorption and dangling bond spin densities, it is found that a‐Si:H films which have ∼1015 bulk defects/cm3 exhibit surface or interface layers with ∼1012 dangling bonds/cm2.
111 citations
TL;DR: It is established experimentally and theoretically that transition metals in amorphous Si undergo direct interstitial diffusion that is retarded by temporary trapping at the defects intrinsic to theAmorphous structure.
Abstract: We have established experimentally and theoretically that transition metals in amorphous Si undergo direct interstitial diffusion that is retarded by temporary trapping at the defects intrinsic to the amorphous structure. The diffusion of Cu, Zn, Pd, Ag, Pt, and Au has been investigated by means of Rutherford-backscattering spectrometry and that of Au tracer atoms by neutron-activation and sputter-sectioning analysis. The data can be fitted using the foreign-atom interstitial diffusion coefficients in crystalline Si modified due to the presence of traps with concentrations between 0.2 and 1 at.% and trapping enthalpies of about 0.9 eV.
111 citations