Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: Theoretical and experimental results show that the proposed color filters have high reflectance and, moreover, decrease the dependence on incident angle compared to one-dimensional photonic crystal color filters.
Abstract: Reflective color filters using two-dimensional photonic crystals based on sub-wavelength gratings were proposed and constructed. Using low-cost nanoimprint lithography, an amorphous silicon layer was deposited through the low-temperature PECVD process and patterned into two-dimensional structures. The isolated amorphous silicon patterns were readily crystallized using a multi-shot excimer laser annealing at low energy. A study of the close relationship between color filter reflectance and silicon pattern crystallinity is introduced. Theoretical and experimental results show that the proposed color filters have high reflectance and, moreover, decrease the dependence on incident angle compared to one-dimensional photonic crystal color filters.
105 citations
Patent•
26 Aug 1999TL;DR: In this paper, a method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate, which is cleaned via process steps (10-28).
Abstract: A method for forming an oxynitride gate dielectric layer (202, 204) begins by providing a semiconductor substrate (200). This semiconductor substrate is cleaned via process steps (10-28). Optional nitridation and oxidation are performed via steps (50 and 60) to form a thin interface layer (202). Bulk oxynitride gate deposition occurs via a step (70) to form a bulk gate dielectric material (204) having custom tailored oxygen and nitrogen profile and concentration. A step (10) is then utilized to in situ cap this bulk dielectric layer (204) with a polysilicon or amorphous silicon layer (208). The layer (208) ensures that the custom tailors oxygen and nitrogen profile and concentration of the underlying gate dielectric (204) is preserved even in the presence of subsequent wafer exposure to oxygen ambients.
105 citations
TL;DR: By starting with exponential band tails of localized states, it was shown that the photoluminescence of $a$-Si: Hi can be explained with no further assumptions as discussed by the authors, and the spectrum and its changes with temperature, with time, and with pump intensity and energy, and the decay curves and lifetime distributions, are predicted by the model, qualitatively and, when the calculation is feasible, quantitatively.
Abstract: By starting with exponential band tails of localized states, it is shown that the photoluminescence of $a$-Si: Hi can be explained with no further assumptions. The spectrum and its changes with temperature, with time, and with pump intensity and energy, and the decay curves and lifetime distributions, are predicted by the model, qualitatively, and, when the calculation is feasible, quantitatively.
105 citations
TL;DR: Amorphous silicon (a-Si) was crystallized by metal-induced crystallization (MIC) using a Ni standard absorption solution as discussed by the authors, and the a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 °C.
Abstract: Amorphous silicon (a-Si) was crystallized by metal-induced crystallization (MIC) using a Ni standard absorption solution. The a-Si films spin-coated with a 5000 ppm Ni solution were crystallized at as low as 500 °C. Needlelike morphology, developed as a result of the migration of NiSi2 precipitates, appears in the MIC poly-Si. The growth of the needlelike crystallites proceeds to a direction parallel to 〈111〉. The a-Si can be fully crystallized at 500 °C for 20 h.
105 citations
TL;DR: The contribution of higher-silane related reactive species (HSRS) during film growth is suggested as a key event to increase the degree of photo-induced degradation in the resulting a-Si:H through an incorporation of excess Si-H 2 bonds in the network as far as the substrate temperature is kept constant.
105 citations