Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: An optimized silicon/carbon composite has been developed to further improve its electrochemical performance and lead to ultrafast reversible sodium insertion in the newly generated amorphous silicon.
Abstract: The electrochemical mechanism of nanocrystalline silicon anode in sodium ion batteries is first studied via in operando Raman and in operando X-ray diffraction. An irreversible structural conversion from crystalline silicon to amorphous silicon takes place during the initial cycles, leading to ultrafast reversible sodium insertion in the newly generated amorphous silicon. Furthermore, an optimized silicon/carbon composite has been developed to further improve its electrochemical performance.
102 citations
TL;DR: In this article, rib waveguides based on a-SiC:H/a-Si:H stack have been realized on crystal silicon, showing low propagation losses, and a new interest as low as 0.7 dB/cm.
Abstract: Waveguides and interferometric light amplitude modulators for application at the 1.3- and 1.55-/spl mu/m fiber communication wavelengths have been fabricated with thin-film hydrogenated amorphous silicon and its related alloys. The technique adopted for the thin-film growth is the plasma- enhanced chemical vapor deposition, which has been shown to give the lowest defect concentration in the film. Consequently the proposed waveguiding structures take advantage of the low optical absorption shown by a-Si:H at photon energies below the energy gap. In addition a good radiation confinement can be obtained thanks to the bandgap tailoring opportunity offered by this simple and inexpensive technology. In particular rib waveguides, based on a a-SiC:H/a-Si:H stack, have been realized on crystal silicon, showing low propagation losses. Recently, however, a new interest as low as 0.7 dB/cm. The same structure has been utilized for the fabrication of thermooptic Fabry-Perot modulators with switching times of 10 /spl mu/s. Modulators based on the alternative waveguiding configuration ZnO/a-Si:H, giving comparable results, are also presented.
102 citations
TL;DR: In this article, a flexible low-pressure sensor design with convention architectures of n-type doped hydrogenated amorphous silicon with metal-on-amorphous silicon contacts on flexible substrate is fabricated.
Abstract: A new flexible low-pressure sensor design with convention architectures of n-type doped hydrogenated amorphous silicon with metal-on-amorphous silicon contacts on flexible substrate is fabricated. The sensing elements are wired according to a full Wheatstone-bridge layout, to reduce any temperature effects. These low-pressure sensors are subjected to repetitive strains/pressure testing. The experiment demonstrates a linear pressure relationship in the 0–2.0 psi range with a sensitivity of 1.953 ± 0.020 mV / psi . The measurements observed are in good agreement with the analytical solution.
102 citations
TL;DR: In this paper, a model of concurrent lithiation and rate-sensitive plasticity is developed for amorphous LixSi thin films, and the results have direct ramifications concerning the rate-capabilities of silicon electrodes: faster charging rates (i.e., strain rates) result in larger stresses and hence larger driving forces for fracture.
102 citations
TL;DR: In this paper, the authors present a thermalization-energy concept that unifies the time and temperature dependence of Si dangling-bond defect creation and removal in amorphous-silicon thin-film transistors.
Abstract: We present a thermalization-energy concept that unifies the time and temperature dependence of Si dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors. There is a distribution of energy barriers for defect creation and removal, with the most probable energy barrier being 1.0 eV for defect creation and between 1.1 and 1.5 eV for defect removal, depending on how the defects were initially created. We suggest defect creation proceeds via Si-Si bond breaking, whereas defect removal proceeds by release of H from a SiHD complex.
102 citations