Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: Fluorine distribution profiles for silicon implanted with BF+2 have been measured by SIMS as a function of anneal temperature and time, and anomalous migration of fluorine is observed in samples having amorphized layers after implantation.
Abstract: Fluorine distribution profiles for silicon implanted with BF+2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼−110 °C).
98 citations
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TL;DR: In this article, large-scale synthesis of amorphous silicon oxide nanowires (SiONWs) was achieved by using simple physical evaporation of the mixture of silica xerogel containing Fe nanoparticles and silicon powder.
Abstract: Large-scale synthesis of amorphous silicon oxide nanowires (SiONWs) was achieved by using simple physical evaporation of the mixture of silica xerogel containing Fe nanoparticles and silicon powder. Transmission electron microscopy (TEM) observations showed that the amorphous SiONWs have a length of up to several tens of micrometers and a diameter of 10–40 nm. Energy-dispersed X-ray spectrometry (EDX) analysis revealed that the SiONWs consist of Si and O elements in atomic ratio approximately to 1:1.4. Different morphologies of nanowires such as straight, smoothly curved, braided and helical shapes were observed. The formation process of SiONWs was closely related to the VLS growth mechanism. Raman scattering spectrum of amorphous SiONWs showed that there is an asymmetric, broadened linewidth Raman peak at 502 cm −1 greatly different from that of bulk SiO 2 non-crystalline solids.
98 citations
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TL;DR: In this paper, stable negative ions containing up to sixteen silicon atoms have been measured by mass spectrometry in RF power-modulated silane plasmas for amorphous silicon deposition.
Abstract: Stable negative ions containing up to sixteen silicon atoms have been measured by mass spectrometry in RF power-modulated silane plasmas for amorphous silicon deposition. These hydrogenated silicon cluster ions reach much higher masses than the positive ions, which have no more then six silicon atoms. This supports the view that negative ions are the precursors to particulate formation in silane plasmas. The time-dependent fluxes of positive and negative ions from the plasma are shown with a 5 mu s time resolution. Possible cluster reaction sequences are discussed and the effect of visible light on the negative ion signal is commented upon.
97 citations
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TL;DR: In this article, an extensive monitoring of photovoltaic technologies was carried out in the last 18 months at the outdoor development center HEnergia of HERA S.p.A. in Forli (Italy).
97 citations
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TL;DR: In this paper, the first switching operation of a virgin device is described, which is effectively a unique forming process for all subsequent operations, and evidence is presented that forming is a charge controlled process which occurs at a constant field across the n-layer, but details of the switching mechanisms in the a-Si p+n-i devices remain obscure.
Abstract: Recent experimental observations on high-speed memory switching in p+-n-i structures of amorphous silicon are described. Particular emphasis is given to the first switching operation of a virgin device which is effectively a unique forming process for all subsequent operations. There is a characteristic delay for forming, varying over ten orders of magnitude from ∼ 102to ∼ 10−8 s. Evidence is presented to show that forming is a charge controlled process which occurs at a constant field across the n-layer, but details of the switching mechanisms in the a-Si p+-n-i devices remain obscure.
97 citations