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Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: In this article, the authors developed a new theory to describe the characteristics of amorphous silicon based alloy field effect transistors and showed that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap.
Abstract: In this paper we develop a new theory to describe the characteristics of amorphous silicon based alloy field‐effect transistors. We show that the transition from below to above threshold operation occurs when the Fermi level in the accumulation region moves from the deep to tail localized states in the energy gap. The current‐voltage and capacitance‐voltage characteristics are related to the basic material parameters such as the distribution of localized states in the energy gap, band mobility, device geometry, channel doping, and series resistances. Our analysis shows that an on current in excess of 2×10−7 A/μm gate width can be obtained with a 10‐μm gate length. We also demonstrate that even in the above threshold regime the field‐effect mobility is dependent on the gate voltage. Our theory can be used to optimize the design of amorphous silicon based alloy field‐effect transistors.
393 citations
TL;DR: In this article, the authors evaluate the advances and limitations of this class of polymer in transistor devices, and evaluate the performance of polymers based on thienothiophene copolymers in solution-processed transistor devices.
Abstract: Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin-film transistor devices. With the possibility to formulate these p-type materials as inks and subsequently print into patterned devices, organic-based transistors offer significant commercial advantages for manufacture, with initial applications such as low performance displays and simple logic being envisaged. Previous limitations of both air stability and electrical performance are now being overcome with a range of both small molecule and polymer-based solution-processable materials, which achieve charge carrier mobilities in excess of 0.5 cm 2 V -1 s -1 , a benchmark value for amorphous silicon semiconductors. Polymer semiconductors based on thienothiophene copolymers have achieved amongst the highest charge carrier mobilities in solution-processed transistor devices. In this Progress Report, we evaluate the advances and limitations of this class of polymer in transistor devices.
393 citations
TL;DR: It is shown that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-optical switch operating at the nanoscale.
Abstract: We demonstrate experimentally ultrafast all-optical switching in subwavelength nonlinear dielectric nanostructures exhibiting localized magnetic Mie resonances. We employ amorphous silicon nanodisks to achieve strong self-modulation of femtosecond pulses with a depth of 60% at picojoule-per-disk pump energies. In the pump–probe measurements, we reveal that switching in the nanodisks can be governed by pulse-limited 65 fs-long two-photon absorption being enhanced by a factor of 80 with respect to the unstructured silicon film. We also show that undesirable free-carrier effects can be suppressed by a proper spectral positioning of the magnetic resonance, making such a structure the fastest all-optical switch operating at the nanoscale.
389 citations
TL;DR: In this article, the authors showed that after intensive and long illumination of undoped a−Si:H samples, the dark ESR signal was considerably enhanced, and they concluded that the light-induced defects are single dangling bonds.
Abstract: After intensive and long illumination of undoped a‐Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light‐induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.
387 citations
Book•
31 Oct 1998
TL;DR: The technology of amorphous and microcrystalline silicon solar cells has been studied in this paper, where the authors present an overview of the properties of solar cells and their properties in terms of optical, electronic and structural properties.
Abstract: Part I: Technology of Amorphous and Microcrystalline Silicon Solar Cells. 1. Introduction. 2. Deposition of Amorphous and Microcrystalline Silicon. 3. Optical, Electronic and Structural Properties. 4. Technology of Solar Cells. 5. Metastability. Part II: Modeling of Amorphous Silicon Solar Cells. 6. Electrical Device Modeling. 7. Optical Device Modeling. 8. Integrated Optical and Electrical Modeling. Index.
383 citations