Amorphous silicon

About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.

Manufacture of semiconductor

Abstract: PURPOSE: To obtain a polycrystalline silicon semiconductor film which has an excellent electric characteristic by a method wherein a hydrogenated amorphous silicon film is formed at low temperatures and is heat-treated in a vacuum and then it is dehydrogenated to generate a dangling bond in the film and the excimer laser is cast on the film in a vacuum-unbroken state. CONSTITUTION: An SiO 2 film or silicon nitride film is formed as a base protective film 12 on a glass substrate 11. Nextly, an intrinsic hydrogenated amorphous silicon semiconductor layer 13 is formed in the thickness of 100nm by the plasma CVD method. At that time, by setting the film formation temperature low, the formed amorphous silicon film is allowed to have in it a good quantity of water and bonds of silicon are neutralized with hydrogen as much as possible. Nextly, a device separation patterning is conducted and the sample is heated in a vacuum at 450°C for one hour to be dehydrogenated completely and dangling bonds (unpaired bonds) are generated in high density in the film. With the vacuum state being maintained, the excimer laser is cast on the sample to crystallize it. COPYRIGHT: (C)1993,JPO&Japio

Handbook of semiconductor technology

Abstract: VOLUME 1 Band Theory Applied to Semiconductors Electrical and Optical Characteristics of Crystalline Semiconductors Deep Centers in Semiconductors Equilibria, Nonequilibria, Diffusion and Precipitation Dislocation Grain Boundaries Interfaces The Hall Effect in Quantum Wires Material Properties of Hydrogenated Amorphous Silicon Solubility Diffusion and Gettering of Illd Transition Elements in Silicon VOLUME 2 Silicon Processing Compound Semiconductor Processing Epitaxial Growth Photolitography Doping Etching Processes in Semiconductor Manufacturing Silicon Device Structures Compound Semicondutor Device Structures Silicon Device Processing Compound Semiconductor Device Processing Integrated Circuit Packaging Interconnect Systems

High quality photovoltaic semiconductor material and laser ablation method of fabricating same

Abstract: A high quality, narrow band gap, hydrogenated amorphous germanium or amorphous silicon alloy material characterized by a host matrix in which all hydrogen is incorporated therein in germanium monohydride or silicon monohydride form, respectively; their mobility-lifetime product for non-equilibrium charge carriers is about 10-8 and about 10-7, respectively; their density of defect states in the band gap thereof is less than about 1 x 1017 and about 2 x 1016/cm3, respectively; and their band gap is about 1.5 and about 0.9 eV, respectively. There is also disclosed a structure formed from a plurality of very thin layer pairs of hydrogenated amorphous germanium and amorphous silicon alloy material, each layer pair of which cooperates to provide narrow band gap material. From about 3 to about 7 atomic percent fluorine is added to the germanium and/or silicon alloy material so as to provide a strong bond (as compared to hydrogen) so as to provide reduced sensitivity to Stabler/Wronski degradation. The preferred method of fabricating such improved narrow band gap materials is through a laser ablation process in which hydrogen or fluorine gas is introduced for incorporation into the germanium or silicon host matrix, thereby eliminating the reliance on the zoo of precursor species present in r.f. or microwave plasma process. The apparatus (10) employed includes an excimer laser (1) which produces pulsed UV light (2) which passes through a focusing lens (3) and a quartz window (4) in the vacuum chamber (5) and strikes a silicon or germanium target (6) which is mounted on an axle (7). A plasma zone (9) is created within which one or more heated substrates (8) are mounted.

35% efficient nonconcentrating novel silicon solar cell

Abstract: An energy conversion efficiency of 35% was obtained at 1‐sun, air mass 1.5 for a novel silicon cell. The critical feature of the cell structure is the inclusion of local defect layers near a p‐n junction. The local defect layers were proven to hold the key to achieving the exceptionally high efficiency of the novel cell fabricated via noncomplex processing.

Process for fabricating a thin film transistor semiconductor device

Abstract: A process for fabricating a semiconductor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature not higher than the crystallization temperature of amorphous silicon, and it comprises forming selectively, on the surface or under an amorphous silicon film, a coating, particles, clusters, and the like containing nickel, iron, cobalt, platinum or palladium either as a pure metal or a compound thereof such as a silicide, a salt, and the like, shaped into island-like portions, linear portions, stripes, or dots; and then annealing the resulting structure at a temperature lower than the crystallization temperature of an amorphous silicon by 20° to 150° C.