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Amorphous silicon

About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.


Papers
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Journal ArticleDOI
TL;DR: The thermal conductivity of self-ion-implanted, amorphized silicon is an order of magnitude less than that of crystalline silicon and is by far the dominant parameter determining the dynamical response of the ionimplanted silicon system to pulsed-laser radiation.
Abstract: It is demonstrated that the thermal conductivity of self-ion--implanted, amorphized silicon is an order of magnitude less than that of crystalline silicon and is by far the dominant parameter determining the dynamical response of the ion-implanted silicon system to pulsed-laser radiation; the latent heat and melting temperature of amorphous silicon are relatively unimportant. Transmission electron microscopy indicates that bulk nucleation occurs in the highly undercooled liquid phase; a model simulating this effect is presented.

81 citations

Journal ArticleDOI
20 May 2020
TL;DR: In this paper, an approach to overcome the refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier is presented.
Abstract: The development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.

81 citations

Journal ArticleDOI
TL;DR: In this article, a self-assembled monolayer (SAM) was applied to silicon micro/nano-textured surfaces to obtain superhydrophobic surfaces with water contact angles of 155°.
Abstract: A novel way of producing superhydrophobic surfaces by applying a self-assembled monolayer (SAM) to silicon micro/nano-textured surfaces is presented in this paper. The micro/nano-textured surfaces on silicon substrates were generated by the aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) technique. Octadecyltrichlorosilane (OTS) SAMs were then applied to the textured surfaces by dip coating. The topography and wetting properties of the resulting surfaces were characterized using scanning electron microscopy (SEM) and a video-based contact angle measurement system. The results show that by introducing OTS SAMs on the silicon micro/nano-textured surfaces, superhydrophobic surfaces with water contact angles (WCAs) of 155° were obtained, as compared to the WCAs of OTS-modified smooth silicon surfaces of about 112°. Surface topography was found to directly influence the WCA as predicted by the Cassie-Baxter model.

81 citations

Patent
15 Nov 2006
TL;DR: In this article, a compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive.
Abstract: In some embodiments, the present invention is directed to compositionally-graded hybrid nanostructure-based photovoltaic devices comprising elongated semiconductor nanostructures and an amorphous semiconductor single layer with continuous gradation of doping concentration across its thickness from substantially intrinsic to substantially conductive. In other embodiments, the present invention is directed to methods of making such photovoltaic devices, as well as to applications which utilize such devices (e.g., solar cell modules).

81 citations

Journal ArticleDOI
TL;DR: The RF PECVD a-Si alloy solar cell processor, designed and built by ECD, deposits triple-junction solar cell materials consisting of nine layers of aSi alloys in a continuous roll-to-roll operation simultaneously on six coils of 130 μm thick, 0.36 m wide, 2.6 km long stainless-steel substrate at 1 cm/s.

81 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022214
2021245
2020422
2019526
2018571