Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: No evidence is found that the anharmonic decay is inhibited in the region of localized states of the realistic atomic model of amorphous silicon, in contrast to predictions of the fracton model.
Abstract: Anharmonic decay rates are calculated for a realistic atomic model of amorphous silicon. The results show that the vibrational states decay on picosecond time scales and their decay rates increase with increasing frequency. These results disagree with a recent experiment. In contrast to predictions of the fracton model, we find no evidence that the anharmonic decay is inhibited in the region of localized states.
80 citations
TL;DR: In this paper, the authors used the contact potential (Kelvin probe) method to evaluate the electrostatic potential profile across the transparent conductive oxide/p/i junction in hydrogenated amorphous silicon photovoltaic cells.
80 citations
TL;DR: In this article, aluminum metal-induced crystallization and doping of hydrogenated amorphous silicon (a•Si:H) have been investigated and electrical, surface morphological and chemical characterizations of the material were performed.
Abstract: Aluminum metal‐induced crystallization and doping of hydrogenated amorphous silicon (a‐Si:H) have been investigated. Aluminum was evaporated onto device quality a‐Si:H films deposited in an ultrahigh vacuum plasma‐enhanced chemical vapor deposition system. These Al/a‐Si:H structures were annealed in the 100–300 °C range. Electrical, surface morphological, and chemical characterizations of the material were performed. The transmission line model technique was used for electrical characterization. Raman spectroscopy showed that crystallization of the interacted a‐Si:H film underneath Al pads initiates at temperatures as low as 180 °C. X‐ray diffraction analysis showed very good polycrystallinity of the interacted film. Electrical measurement, Hall measurement and x‐ray photoelectron spectroscopy analysis results revealed that a‐Si:H film in contact with Al becomes heavily doped by Al during crystallization as a result of annealing at relatively low temperatures.
80 citations
Patent•
05 Jun 1995
TL;DR: In this paper, a polycrystalline silicon thin film is formed on a substrate, and the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm2 to 500 mJ /cm2, with a pulse width of 80 ns to 200 ns, and a total energy of 5 J, preferably at least 10 J.
Abstract: A method of forming a polycrystalline silicon thin film improved in crystallinity and a channel of a transistor superior in electrical characteristics by the use of such a polycrystalline silicon thin film. An amorphous silicon layer of a thickness preferably of 30 nm to 50 nm is formed on a substrate. Next, substrate heating is performed to set the amorphous silicon layer to preferably 350° C. to 500° C., more preferably 350° C. to 450° C. Then, at least the amorphous silicon layer is irradiated with laser light of an excimer laser energy density of 100 mJ/cm2 to 500 mJ/cm2, preferably 280 mJ/cm2 to 330 mJ/cm2, and a pulse width of 80 ns to 200 ns, preferably 140 ns to 200 ns, so as to directly anneal the amorphous silicon layer and form a polycrystalline silicon thin film. The total energy of the laser used for the irradiation of excimer laser light is at least 5 J, preferably at least 10 J.
80 citations
TL;DR: In this paper, the authors have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbonide (a-SiC:H)/silicon-rich hydrogenated polysilicon carbide multi-layer.
Abstract: We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by the thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/silicon-rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscopy (TEM) revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.
80 citations