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Amorphous silicon

About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.


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TL;DR: In this article, ZrO2 films were deposited on planar Si wafers and patterned amorphous silicon cylinders by rapid thermal chemical vapor deposition process using a zirconium (IV) t-butoxide Zr(OC4H9)4 precursor and oxygen.
Abstract: ZrO2 is investigated in this work to replace SiO2 as the dielectric material in metal–oxide–metal capacitors in dynamic random access memory (DRAM) devices for its high dielectric constant, good thermal stability, excellent conformality, and large band gap. ZrO2 films were deposited on planar Si (100) wafers and patterned amorphous silicon cylinders by rapid thermal chemical vapor deposition process using a zirconium (IV) t-butoxide Zr(OC4H9)4 precursor and oxygen. At substrate temperature below 300 °C, no significant deposition was observed. At temperatures between 300 and 400 °C, the reaction is thermally activated with an activation energy of 29 kcal/mol, consistent with a β-hydride elimination mechanism leading to ZrO2 deposition. In this regime, one atomic layer of ZrO2 can be deposited after each alternating exposure to the precursor and oxygen, ideal for achieving conformal coverage of ZrO2 over high aspect ratio features. At temperatures above 400 °C, the deposition rate is less sensitive to tempe...

78 citations

Journal ArticleDOI
TL;DR: Amorphous-silicon states have been generated in a computationally efficient manner by quenching liquid silicon configurations using a molecular-dynamics simulation using two-and three-body interatomic Si potentials as discussed by the authors.
Abstract: Amorphous-silicon states have been generated in a computationally efficient manner by quenching liquid silicon configurations using a molecular-dynamics simulation. Classical two- and three-body interatomic Si potentials have been used. We present results for the radial distribution functions, bond-angle distributions, vibrational densities of states, and neutron scattering functions for the theoretically generated a-Si states. The molecular-dynamics simulations generate threefold- and fivefold-coordinated defects in the a-Si structures.

78 citations

Journal ArticleDOI
TL;DR: This work reports on the absorption of a 100nm thick hydrogenated amorphous silicon layer patterned as a planar photonic crystal (PPC), using laser holography and reactive ion etching, which may be at the basis of new photovoltaic solar cells.
Abstract: We report on the absorption of a 100nm thick hydrogenated amorphous silicon layer patterned as a planar photonic crystal (PPC), using laser holography and reactive ion etching Compared to an unpatterned layer, electromagnetic simulation and optical measurements both show a 50% increase of the absorption over the 038-075micron spectral range, in the case of a one-dimensional PPC Such absorbing photonic crystals, combined with transparent and conductive layers, may be at the basis of new photovoltaic solar cells

78 citations

Journal ArticleDOI
TL;DR: Etude de la photoemission interne des trous dans la bande de valence du silicium amorphe hydrogene and des electrons dans the bande of conduction pour determiner thelles interdite de mobilite de ce materiau a temperature ambiante.
Abstract: We report the first observation of the internal photoemission of holes into the valence band of hydrogenated amorphous silicon from metal contacts. This, together with the corresponding photoemission of electrons into the conduction band, is used to directly determine the room-temperature mobility gap of a-Si:H. The effective mobility gap is found to be 1.89\ifmmode\pm\else\textpm\fi{}0.03 eV which is 0.16 eV larger than its Tauc optical gap of 1.73 eV. The important implications of the results on the understanding of a-Si:H band structure, electronic properties, and devices are outlined.

78 citations

Journal ArticleDOI
TL;DR: In this article, the effect of packing factor of a PV module integrated to the roof of a building, on the module and room air temperature, and electrical efficiency of PV module was investigated.

78 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022214
2021245
2020422
2019526
2018571