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Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: In this article, the first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have been reported, which are used in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics.
Abstract: Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconductors has triggered their use as the active element in microelectronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet printing, without a temperature hierarchy, and their mechanical flexibility. Applications are foreseen in the field of large-area electronics where numerous devices are integrated on low-cost substrates such as plastics. The first flexible, even rollable, quarter video graphics array (QVGA) active matrix displays based on organic semiconductors have already been reported.[1]
224 citations
TL;DR: In this article, the authors confirm that the abruptness of the interface is strongly determined by the annealing process, and that the passivation quality of completely amorphous silicon films can be improved by annaling at temperatures up to 260°C.
Abstract: Intrinsic hydrogenated amorphous silicon films can yield outstanding electronic surface passivation of crystalline silicon wafers. In this letter the authors confirm that this is strongly determined by the abruptness of the interface. For completely amorphous films the passivation quality improves by annealing at temperatures up to 260°C, most likely by film relaxation. This is different when an epitaxial layer has been grown at the interface during film deposition. Annealing is in such a case detrimental for the passivation. Consequently, the authors argue that annealing followed by carrier lifetime measurements allows determining whether the interface is abrupt.
224 citations
TL;DR: In this article, the authors studied the trap density of states (trap DOS) of small-molecule organic semiconductors as derived from electrical characteristics of organic field effect transistors or from space charge-limited current measurements.
Abstract: We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT's), single crystal field-effect transistors (SC-FET's) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of ``fast'' hole traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close $(l0.15\text{ }\text{eV})$ to the mobility edge with a characteristic slope of 10--20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT's with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.
222 citations
TL;DR: In this paper, the optical properties of thin a-SiHx films were studied and the intrinsic optical limitations on the performance of the SiHx cells were defined for the absorption range 10−1-106 cm−1.
221 citations