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Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: In this article, the authors studied the step coverage of amorphous silicon and germanium on patterned substrates and found that the film formation process under device-quality deposition conditions has a substantial component that behaves like a surface rate-limited chemical vapor deposition process, while conditions producing defective material are associated with a much more physical vapor deposition-like process.
Abstract: By studying the step coverage of plasma‐deposited amorphous silicon and germanium on patterned substrates, we find that the film formation process under device‐quality deposition conditions has a substantial component that behaves like a surface rate‐limited chemical vapor deposition process, while conditions producing defective material are associated with a much more physical‐vapor‐deposition‐like process. An explanation involving surface reactions of SiHx radicals is proposed.
205 citations
TL;DR: In this article, the authors have fabricated hydrogenated amorphous silicon (aSi:H)∕crystalline silicon (cSi) heterojunction solar cells with different aSi:h layer thicknesses, in order to determine effects of aSiH2-rich interface structure formed at the aµ:H∕cµ heterointerface.
Abstract: We have fabricated hydrogenated amorphous silicon (a‐Si:H)∕crystalline silicon (c‐Si) heterojunction solar cells with different a‐Si:H layer thicknesses, in order to determine effects of a‐Si:H layer thicknesses on the performance of a‐Si:H∕c‐Si solar cells The thicknesses of a‐Si:H p‐i layers formed on a n-type c‐Si substrate were controlled accurately on the atomic scale by applying real-time spectroscopic ellipsometry during the a‐Si:H growth With increasing a‐Si:H p‐i layer thicknesses, the open-circuit voltage (Voc) and fill factor increase drastically up to 40A (i layer) and 30A (p layer), whereas the short-circuit current density (Jsc) reduces gradually By using optimum a‐Si:H layer thicknesses (i∕p=40∕30A), we obtained a solar cell efficiency of 161% without incorporating surface texture and a back-surface field structure Quite interestingly, the optimum a‐Si:H i-layer thickness (40A) shows good correlation with a SiH2-rich interface structure formed at the a‐Si:H∕c‐Si heterointerface, sugges
204 citations
TL;DR: In this paper, the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates are described, with optimized device layouts and low-temperature gate dielectrics.
Abstract: This letter describes the fabrication and properties of bendable single-crystal-silicon thin film transistors formed on plastic substrates. These devices use ultrathin single-crystal silicon ribbons for the semiconductor, with optimized device layouts and low-temperature gate dielectrics. The level of performance that can be achieved approaches that of traditional silicon transistors on rigid bulk wafers: effective mobilities>500cm/sup 2//V/spl middot/s, ON/OFF ratios >10/sup 5/, and response frequencies > 500 MHz at channel lengths of 2 /spl mu/m. This type of device might provide a promising route to flexible digital circuits for classes of applications whose performance requirements cannot be satisfied with organic semiconductors, amorphous silicon, or other related approaches.
203 citations
TL;DR: In this paper, the influence of different textures and dielectric environments on the excitation of surface plasmon resonances on silver was studied, where textured metallic films often serve as back contacts of silicon thin film solar cells.
Abstract: We study the influence of different textures and dielectric environments on the excitation of surface plasmon resonances on silver because textured metallic films often serve as back contacts of silicon thin film solar cells. For coupling between light and the surface plasmon excitation we use a periodic sinusoidal structure that enables us to sample the dispersion relation at well defined conditions with a simple spectral reflection measurement. We use three layer samples of amorphous silicon/ZnO/silver to mimic the behavior of the back contact in a thin film silicon solar cell; the measurements suggest that losses due to plasmon excitation can very well extend in the spectral region where optimum reflectance is desired. An appropriate thickness of ZnO is able to reduce absorption losses. Our findings on periodic structures are also found useful to explain the behavior of surface plasmon excitation on randomly textured ZnO/Ag reflector layers.
203 citations
Patent•
21 Nov 1991TL;DR: An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and at least one gate electrode formed on said amorphously silicon semiconducted layer through an insulation layer or a high resistance layer, whereby the operation of said gate electrode controls the dopant distribution of said semiconducting layer, thereby varying the electrical conductivity thereof.
Abstract: An electrically plastic device comprising an amorphous silicon semiconductor layer including movable dopant formed between a pair of electrodes and; at least one gate electrode formed on said amorphous silicon semiconductor layer through an insulation layer or a high resistance layer; whereby the operation of said gate electrode controls the dopant distribution of said amorphous semiconductor layer, thereby varying the electrical conductivity thereof.
202 citations