Amorphous silicon

About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.

Stable solar-driven oxidation of water by semiconducting photoanodes protected by transparent catalytic nickel oxide films

Abstract: Reactively sputtered nickel oxide (NiOx) films provide transparent, antireflective, electrically conductive, chemically stable coatings that also are highly active electrocatalysts for the oxidation of water to O2(g). These NiOx coatings provide protective layers on a variety of technologically important semiconducting photoanodes, including textured crystalline Si passivated by amorphous silicon, crystalline n-type cadmium telluride, and hydrogenated amorphous silicon. Under anodic operation in 1.0 M aqueous potassium hydroxide (pH 14) in the presence of simulated sunlight, the NiOx films stabilized all of these self-passivating, high-efficiency semiconducting photoelectrodes for >100 h of sustained, quantitative solar-driven oxidation of water to O2(g).

Fabrication of 0.1 μm metal oxide semiconductor field‐effect transistors with the atomic force microscope

Abstract: Using the atomic force microscope (AFM), we have fabricated a metal oxide semiconductor field‐effect transistor (MOSFET) on silicon with an effective channel length of 0.1 μm. The lithography at the gate level was performed with the scanning tip of the AFM. The gate was defined by electric‐field‐enhanced selective oxidation of the amorphous silicon gate electrode. The electrical characteristics were reasonable with a transconductance of 279 mS/mm and a threshold voltage of 0.55 V.

Epitaxial oxide thin films on Si(001)

Abstract: Over the years, the development of epitaxial oxides on silicon has been a great technological challenge. Amorphous silicon oxide layer forms quickly at the interface when the Si surface is exposed to oxygen, making the intended oxide heteroepitaxy on Si substrate extremely difficult. Epitaxial oxides such as BaTiO3 (BTO) and SrTiO3 (STO) integrated with Si are highly desirable for future generation transistor gate dielectric and ferroelectric memory cell applications. In this article, we review the recent progress in the heteroepitaxy of oxide thin films on Si(001) substrate by using the molecular beam epitaxy technique at Motorola Labs. Structural, interfacial and electrical properties of the oxide thin films on Si have been characterized using in situ reflection high energy electron diffraction, x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, Auger electron spectroscopy, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, high-resolution transmission electron energy loss spectroscopy, capacitance–voltage and current–voltage measurement. We also present the transistor results and address the impact of the epitaxial oxide films on future generation metal-oxide-semiconductor field effect transistors.

SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors

Abstract: We describe physically based analytical models for n‐channel amorphous silicon thin film transistors and for n‐ and p‐channel polysilicon thin film transistors. The models cover all regimes of transistor operation: leakage, subthreshold, above‐threshold conduction, and the kink regime in polysilicon thin film transistors. The models contain a minimum number of parameters which are easily extracted and can be readily related to the structural and material properties of the thin film transistors. The models have been verified for a large number of devices to scale properly with device geometry.