Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a-Si/a-Si stacked solar cells were realized with initial efficiencies exceeding 10% in the long wavelength range, demonstrating an effective light trapping capability.
559 citations
01 Jan 2000
TL;DR: In this paper, active-matrix liquid-crystal displays and laser-crystallization for polycrystalline silicon device applications are discussed, as well as large area image sensor arrays and multilayer color detectors.
Abstract: 1 Introduction- 2 Active-Matrix Liquid-Crystal Displays- 3 Laser Crystallization for Polycrystalline Silicon Device Applications- 4 Large Area Image Sensor Arrays- 5 Novel Processing Technology for Macroelectronics- 6 Multijunction Solar Cells and Modules- 7 Multilayer Color Detectors- 8 Thin Film Position Sensitive Detectors: From 1D to 3D Applications- Symbols and Abbreviations
534 citations
TL;DR: The rapid progress that is being made with inorganic thin-film photovoltaic (PV) technologies, both in the laboratory and in industry, is reviewed in this paper.
531 citations
Book•
01 Jan 1989
TL;DR: In this article, the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials are presented, each contribution is authored by an outstanding expert in that particular area.
Abstract: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
528 citations
TL;DR: In this paper, Raman scattering measurements on hydrogenated microcrystalline silicon prepared in a hydrogen plasma at deposition temperatures between approximately 65 and 400 degrees C are presented and discussed.
Abstract: Raman scattering measurements on hydrogenated microcrystalline silicon prepared in a hydrogen plasma at deposition temperatures between approximately=65 and 400 degrees C are presented and discussed. The shifts of the crystalline (c) and 'amorphous-like' (a) components of the spectra to lower frequencies with decreasing crystallite size have been correlated with the lattice expansion and the finite dimensions of the crystallites in these films. The roles of hydrogen and of the compressive stress in the samples have been investigated by annealing experiments and a deposition of the samples under negative bias of the substrate, respectively. These results point to a probable mechanism of the crystalline-amorphous transition in silicon. The data presented allow an assignment of the amorphous-like feature in the Raman spectra to surface-like modes at grain boundaries of the crystallites. Strong arguments are given that suggest that the 480 cm-1 peak in the Raman spectra of X-ray amorphous silicon is of the same origin and is hence associated with some shearing modes of Si clusters rather than a broadened density of states. Results on the depolarisation ratio of Raman scattering in the microcrystalline and X-ray amorphous films are also presented and discussed.
523 citations