Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: A metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms, which could find applications in large area electronics, such as biomedical imaging, where a fast response is critical.
Abstract: One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate a metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. The transient response does not show persistent (residual) photoconductivity, unlike conventional a-Si devices where it may last 3–5 ms, thus making this heterojunction roughly 10X faster. A photoresponsivity of 210 mA/W is measured at green light, the wavelength used in commercial imaging systems, which is 2−4X larger than that of a-Si and best reported MoS2 devices. The device could find applications in large area electronics, such as biomedical imaging, where a fast response is critical.
149 citations
Patent•
01 Jun 1971TL;DR: In this article, the use of thin amorphous silicon film as a narrow-band rejection filter is discussed. But this filter is used either as a mask to UV light in semiconductor device processing or as a protective shield for solar cells which overheat in the presence of ultraviolet light.
Abstract: There is disclosed the use of a thin amorphous silicon film as a narrow-band rejection filter which is used either as a mask to UV light in semiconductor device processing or is used as a protective shield for solar cells which overheat in the presence of ultraviolet light.
149 citations
TL;DR: In this article, the influence of the N2O/SiH4 flow ratio and the thickness of the films on the optical and structural properties of the material was analyzed, and the results demonstrate that in silicon dioxide-like material, the nitrogen concentration can be adequately controlled (within the range 0−15 at%) with total hydrogen incorporation below 5 at.
149 citations
TL;DR: In this article, hydrogenated amorphous silicon has been deposited by a new technique of thermal decomposition of silane from a hot tungsten or carbon foil heated to about 1600°C.
Abstract: Hydrogenated amorphous silicon has been deposited by a new technique of thermal decomposition of silane from a hot tungsten or carbon foil heated to about 1600 °C. Initial measurements indicate that the resulting films have a fairly high photoresponse. Introduction of ammonia along with silane is seen to enhance the photoconductivity quite significantly.
148 citations
TL;DR: In this article, germanium-seeded lateral crystallization of amorphous silicon was used for the fabrication of 100-nm channel-length thin-film transistors.
Abstract: We report on 100-nm channel-length thin-film transistors (TFTs) that are fabricated using germanium-seeded lateral crystallization of amorphous silicon. Germanium seeding allows the fabrication of devices with control over grain boundary location. Its effectiveness improves with reduced device geometry, allowing "single-grain" device fabrication. In the first application of this technology to deep submicron devices, we report on 100-nm devices having excellent performance compared to conventional TFTs, which have randomly located grains. Devices have on-off ratio >10/sup 6/ and subthreshold slope of 107 mV/decade, attesting to the suitability of germanium-seeding for the fabrication of high-performance TFTs, suitable for use in vertically integrated three-dimensional (3-D) circuits.
148 citations