Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
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TL;DR: In this article, the fabrication of low-loss amorphous silicon photonic wires deposited by plasma enhanced chemical vapor deposition was reported, which achieved propagation loss of 3.46 and 1.34 dB/cm for ridge waveguides.
141 citations
TL;DR: The case for thin-film silicon as one of the main future options for cost-effective photovoltaic solar cells is outlined in this paper, where properties of intrinsic μc-Si:H layers deposited by PECVD at VHF excitation frequencies are listed, together with the necessary conditions for obtaining device-grade material.
140 citations
TL;DR: In this article, the preparation of an all-amorphous thin-film pn junction was described, where the aSi films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities.
Abstract: The preparation of an all‐amorphous thin‐film p‐n junction is described. The a‐Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current‐voltage characteristics of the junction were investigated in the range from 150 to 300 K.
140 citations
Patent•
06 Aug 1997
TL;DR: In this paper, a method of manufacturing a thin-film solar cell, comprising the steps of placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film, was described.
Abstract: A method of manufacturing a thin-film solar cell, comprising the steps of: forming an amorphous silicon film on a substrate; placing a metal element that accelerates the crystallization of silicon in contact with the surface of the amorphous silicon film; subjecting the amorphous silicon film to a heat treatment to obtain a crystalline silicon film; depositing a silicon film to which phosphorus has been added in contact with the crystalline silicon film; and subjecting the crystalline silicon film and the silicon film to which phosphorus has been added to a heat treatment to getter the metal element from the crystalline film.
140 citations
Patent•
24 May 1994
TL;DR: In this article, an active matrix type liquid crystal display whose thin film transistors (TFTs) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are made of the amorphous silicon film can be obtained.
Abstract: Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes/wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.
140 citations