Topic
Amorphous silicon
About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.
Papers published on a yearly basis
Papers
More filters
Patent•
30 Sep 1998
TL;DR: In this article, a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor Nanocrystals, allows thickness of a insulating film between nanocrystal and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility.
Abstract: There are provided a method for fabricating semiconductor nanocrystals which are highly controllable and less variable in density and size, as well as a semiconductor memory device which, with the use of the semiconductor nanocrystals, allows thickness of a insulating film between nanocrystals and channel region to be easily controlled and involves less variations in characteristics such as threshold and programming performance, and which is fast reprogrammable and has nonvolatility. Under a low pressure below atmospheric pressure, an amorphous silicon thin film 3 is deposited on a tunnel insulating film 2 formed on a silicon substrate 1. After the deposition of the amorphous silicon thin film 3, the amorphous silicon thin film 3 is heat treated at a temperature not lower than the deposition temperature of the amorphous silicon thin film 3 in an atmosphere of helium gas having no oxidizability, by which a plurality of spherical nanocrystals 4 with a diameter of 18 nm or less are formed on the tunnel insulating film 2 so as to be spaced from one another. The plurality of nanocrystals 4 are used as the floating gate of a semiconductor memory device.
140 citations
TL;DR: In this article, the electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials, which originates from amphoteric interface state reduction, rather than from a field effect.
Abstract: The electronic properties of hydrogenated amorphous silicon (a-Si:H) relax following stretched exponentials. This phenomenon was explained in the past by dispersive hydrogen diffusion, or by retrapping included hydrogen motion. In this letter, the authors report that the electronic passivation properties of intrinsic a-Si:H/crystalline silicon (c-Si) interfaces relax following a similar law. Carrier injection dependent a-Si:H∕c-Si interface recombination calculations suggest this originates from amphoteric interface state (or Si dangling bond) reduction, rather than from a field effect. These findings underline the similarity between a-Si:H∕c-Si interface recombination and the electronic properties of a-Si:H bulk material.
140 citations
TL;DR: In this paper, high energy mechanical milling was used to synthesize amorphous silicon and nanocrystalline titanium boride nanocomposites with a stable capacity of ∼400 mAh/g.
Abstract: Silicon and titanium boride nanocomposites were synthesized using high-energy mechanical milling. The nanocomposites obtained after mechanical milling consist of amorphous silicon and nanocrystalline titanium boride. The nanocomposite containing 40 mol % silicon obtained after milling for 20 h exhibits a stable capacity of ∼400 mAh/g. X-ray diffraction and scanning electron microscopy analyses indicated that the nanocomposite retains its initial phase and microstructure during electrochemical cycling. Premilling of the inactive TiB 2 component appears to increase the stability of the capacity of the nanocomposite electrodes due to a probable homogeneous distribution of the induced stress during cycling.
140 citations
TL;DR: In this paper, the authors measured the mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in aSi:H are measured using time-of-flight transient photoconductivity.
Abstract: The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a‐Si:H are measured using time‐of‐flight transient photoconductivity. The magnitude obtained for the product μτNs is 3.5×108±25% cm−1 V−1 and 4×107±50% cm−1 V−1 for electrons and holes, respectively. The capture cross section is 4×10−15 cm2 for electrons and about 2×10−15 cm2 for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.
139 citations
TL;DR: In amorphous materials, light-scattering excess, spurious background, Boson-peak or hot-luminescence processes, which have been recently put forward, turn out to be mainly caused by high-order Raman- scattering processes.
Abstract: Raman-scattering measurements have been performed on c-Si and a-Si over a wide range of frequencies, including Stokes and anti-Stokes sides, and up to fourth order. All the features are accounted for by using the same physical parameters in both phases. In particular, it is shown that multiple-order scattering processes are not negligible, but rather of the same order of magnitude as first-order processes. In amorphous materials, light-scattering excess, spurious background, Boson-peak or hot-luminescence processes, which have been recently put forward, turn out to be mainly caused by high-order Raman-scattering processes.
139 citations