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Amorphous silicon

About: Amorphous silicon is a research topic. Over the lifetime, 26777 publications have been published within this topic receiving 423234 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the authors discuss the specific design considerations for high solar-to-hydrogen conversion efficiency in a hybrid solid-state/PEC photoelectrode, and describe the use of integrated electrical/electrochemical/optical models developed at the University of Hawaii for the analysis of such hybrid structures.

126 citations

Journal ArticleDOI
TL;DR: The physics and technology of a new class of photovoltaic devices, namely the conductor-insulator-semiconductor (CIS) solar cells, are reviewed in this article.

126 citations

Journal ArticleDOI
TL;DR: In this article, the threshold voltage shifts (ΔVT) of inverted-staggered amorphous silicon (a-Si:H) thin-film transistors (TFTs) induced by steady-state (dc) and pulsed (ac) gate bias-temperature-stress (BTS) conditions were investigated.
Abstract: We investigated the threshold voltage shifts (ΔVT) of inverted-staggered hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) induced by steady-state (dc) and pulsed (ac) gate bias-temperature-stress (BTS) conditions. Our study showed that, for an equivalent effective-stress-time, ΔVT has an apparent pulse-width dependence under negative BTS conditions–the narrower the pulse width, the smaller the ΔVT. This gate-bias pulse-width dependence is explained by an effective-carrier-concentration model, which relates ΔVT for negative pulsed gate-bias stress to the concentration of mobile carriers accumulated in the conduction channel along the a-Si:H/gate insulator interface. In addition, our investigation of the methodology of a-Si:H TFT electrical reliability evaluation indicates that, instead of steady-state BTS, pulsed BTS should be used to build the database needed to extrapolate ΔVT induced by a long-term display operation. Using these experimental results, we have shown that a-Si:H TFTs have a satisfactory electrical reliability for a long-term active-matrix liquid-crystal display (AMLCD) operation.

125 citations

Journal ArticleDOI
TL;DR: In this article, the synthesis, characterization, and thermal stability of element carbodiimides are discussed. But the main part of this paper is focused on polymeric silicon-based carbodiIMides obtained by the reaction of chloro(organo)silanes with bis(trimethylsilyl) carbodiaminide.
Abstract: Organosilicon carbodiimides have been successfully applied as single-source precursor compounds for the synthesis of novel ternary Si-, C-, and N-containing solid phases. Their thermally induced decomposition gives either amorphous silicon carbonitrides or polycrystalline silicon nitride and silicon carbide mixtures, materials that are presently of technological interest for their exceptional hardness, strength, toughness, and high temperature resistance even in corrosive environments. This review is concerned with the synthesis, characterization, and thermal stability of element carbodiimides. The main part of this paper is focused on polymeric silicon-based carbodiimides obtained by the reaction of chloro(organo)silanes with bis(trimethylsilyl)carbodiimide. In the case of RSiCl3, novel poly(silylcarbodiimide) gels are formed. Starting from silicon tetrachloride, new crystalline SiCN phases (namely, SiC2N4 and Si2CN4), have been isolated. Their crystal structures as well as their thermal behavior in the ...

125 citations

Patent
17 Mar 1992
TL;DR: A semiconductor material and a method for forming the same can be found in this article, where a process consisting of irradiating a laser beam or a high intensity light equivalent to the laser beam to an amorphous silicon film containing carbon, nitrogen, and oxygen is described.
Abstract: A semiconductor material and a method for forming the same, the semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×10 19 atoms·cm -3 or lower, preferably 1×10 19 atoms·cm -3 or lower, without melting the amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, the semiconductor materials being useful for fabricating compact thin film semiconductor devices such as thin film transistors improved in device characteristics.

125 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023118
2022214
2021245
2020422
2019526
2018571