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About: Amplifier is a(n) research topic. Over the lifetime, 163941 publication(s) have been published within this topic receiving 1361964 citation(s). The topic is also known as: amp & amplifier.

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01 Jan 1999
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

4,822 citations

31 Mar 1999
Abstract: Linear PA Design. Conventional High-Efficiency Amplifier Modes. Class AB PAs at GHz Frequencies. Practical Design of Class AB PAs. Overdrive and the Class F Mode. Switching Mode Amplifiers for RF Applications. Switching PA Modes at GHz Frequencies. Signals, Modulation Systems, and PA Nonlinearities. Efficiency Enhancement Techniques. Power Amplifier Bias Circuit Design. Power Amplifier Architecture. PA Linearization Techniques.

2,054 citations

Journal ArticleDOI
Abstract: The new class of amplifiers described is based on a load network synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle. The new class of amplifiers, named `Class E,' is defined and is illustrated by a detailed description and a set of design equations for one simple member of the class. For that circuit the authors measured 96 percent transistor efficiency at 3.9 MHz at 26-W output from a pair of Motorola 2N3735 TO-5 transistors. Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.

1,854 citations

Journal ArticleDOI
01 Nov 1996
Abstract: In linear IC's fabricated in a low-voltage CMOS technology, the reduction of the dynamic range due to the dc offset and low frequency noise of the amplifiers becomes increasingly significant. Also, the achievable amplifier gain is often quite low in such a technology, since cascoding may not be a practical circuit option due to the resulting reduction of the output signal swing. In this paper, some old and some new circuit techniques are described for the compensation of the amplifier's most important nonideal effects including the noise (mainly thermal and 1/f noise), the input-referred dc offset voltage as well as the finite gain resulting in a nonideal virtual ground at the input.

1,765 citations

Journal ArticleDOI
Abstract: There is a need among scientists and clinicians for low-noise low-power biosignal amplifiers capable of amplifying signals in the millihertz-to-kilohertz range while rejecting large dc offsets generated at the electrode-tissue interface. The advent of fully implantable multielectrode arrays has created the need for fully integrated micropower amplifiers. We designed and tested a novel bioamplifier that uses a MOS-bipolar pseudoresistor element to amplify low-frequency signals down to the millihertz range while rejecting large dc offsets. We derive the theoretical noise-power tradeoff limit - the noise efficiency factor - for this amplifier and demonstrate that our VLSI implementation approaches this limit by selectively operating MOS transistors in either weak or strong inversion. The resulting amplifier, built in a standard 1.5-/spl mu/m CMOS process, passes signals from 0.025Hz to 7.2 kHz with an input-referred noise of 2.2 /spl mu/Vrms and a power dissipation of 80 /spl mu/W while consuming 0.16 mm/sup 2/ of chip area. Our design technique was also used to develop an electroencephalogram amplifier having a bandwidth of 30 Hz and a power dissipation of 0.9 /spl mu/W while maintaining a similar noise-power tradeoff.

1,470 citations

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