Showing papers on "Amplifier published in 2002"

Power amplifiers and transmitters for RF and microwave

Abstract: The generation of RF/microwave power is required not only in wireless communications, but also in applications such as jamming, imaging, RF heating, and miniature dc/dc converters. Each application has its own unique requirements for frequency, bandwidth, load, power, efficiency, linearity, and cost. RF power is generated by a wide variety of techniques, implementations, and active devices. Power amplifiers are incorporated into transmitters in a similarly wide variety of architectures, including linear, Kalm, envelope tracking, outphasing, and Doherty. Linearity can be improved through techniques such as feedback, feedforward, and predistortion.

RF power amplifiers for wireless communications

Abstract: A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared.

Fiber-based optical parametric amplifiers and their applications

Abstract: An applications-oriented review of optical parametric amplifiers in fiber communications is presented. The emphasis is on parametric amplifiers in general and single pumped parametric amplifiers in particular. While a theoretical framework based on highly efficient four-photon mixing is provided, the focus is on the intriguing applications enabled by the parametric gain, such as all-optical signal sampling, time-demultiplexing, pulse generation, and wavelength conversion. As these amplifiers offer high gain and low noise at arbitrary wavelengths with proper fiber design and pump wavelength allocation, they are also candidate enablers to increase overall wavelength-division-multiplexing system capacities similar to the more well-known Raman amplifiers. Similarities and distinctions between Raman and parametric amplifiers are also addressed. Since the first fiber-based parametric amplifier experiments providing net continuous-wave gain in the for the optical fiber communication applications interesting 1.5-/spl mu/m region were only conducted about two years ago, there is reason to believe that substantial progress may be made in the future, perhaps involving "holey fibers" to further enhance the nonlinearity and thus the gain. This together with the emergence of practical and inexpensive high-power pump lasers may in many cases prove fiber-based parametric amplifiers to be a desired implementation in optical communication systems.

Apparatus and method for performing surgery on a patient

Abstract: The invention provides an apparatus and method for performing surgery on a patient. The surgical apparatus includes an input device, at least one hydraulic amplifier operably attached to the input device, and an actuator operably attached to the hydraulic amplifier. Input to the input device is hydraulically modulated via the hydraulic amplifier to manipulate the actuator. The surgical method includes receiving a mechanical input for an action. The mechanical input is hydraulically modulated. The action is controlled based on the hydraulically modulated input.

Advanced Techniques in RF Power Amplifier Design

Abstract: RF power amplifier modes Doherty and Chireix - themes and variations topics in PA non-linearity envelope feedback predistortion feedforward microwave-power amplifier design.

Raman amplifiers for telecommunications

Abstract: Raman amplifiers are being deployed in almost every new long-haul and ultralong-haul fiber-optic transmission systems, making them one of the first widely commercialized nonlinear optical devices in telecommunications. This paper reviews some of the technical reasons behind the wide-spread acceptance of Raman technology. Distributed Raman amplifiers improve the noise figure and reduce the nonlinear penalty of fiber systems, allowing for longer amplifier spans, higher bit rates, closer channel spacing, and operation near the zero-dispersion wavelength. Lumped or discrete Raman amplifiers are primarily used to increase the capacity of fiber-optic networks, opening up new wavelength windows for wavelength-division multiplexing such as the 1300 nm, 1400 nm, or short-wavelength S-band. As an example, using a cascade of S-band lumped amplifiers, a 20-channel, OC-192 system is shown that propagates over 867 km of standard, single-mode fiber. Raman amplifiers provide a simple single platform for long-haul and ultralong-haul amplifier needs and, therefore, should see a wide range of deployment in the next few years.

Concurrent multiband low-noise amplifiers-theory, design, and applications

Abstract: The concept of concurrent multiband low-noise-amplifiers (LNAs) is introduced. A systematic way to design concurrent multiband integrated LNAs in general is developed. Applications of concurrent multiband LNAs in concurrent multiband receivers together with receiver architecture are discussed. Experimental results of a dual-band LNA implemented in a 0.35-/spl mu/m CMOS technology as a demonstration of the concept and theory is presented.

Controlling the carrier-envelope phase of ultrashort light pulses with optical parametric amplifiers.

Abstract: The phase link between signal, idler, and pump waves in a parametric interaction allows generation of an idler pulse with a phase independent of that of the input pulse. We suggest the use of a white-light seeded optical parametric amplifier as a self-stabilized source of few-cycle pulses, in which the phase of the electric field is exactly reproduced in each laser shot.

A low-power, low-noise CMOS amplifier for neural recording applications

Abstract: There is a need among scientists and clinicians for low-noise, low-power biosignal amplifiers capable of amplifying signals in the mHz to kHz range while rejecting large dc offsets generated at the electrode-tissue interface. The advent of fully-implantable multielectrode arrays has created the need for fully-integrated micropower amplifiers. We designed and tested a novel bioamplifier that uses a MOS-bipolar pseudo-resistor to amplify signals down to the mHz range while rejecting large dc offsets. We derive the theoretical noise-power tradeoff limit - the noise efficiency factor - for this amplifier and demonstrate that our VLSI implementation approaches that limit. The resulting amplifier, built in a standard 1.5/spl mu/m CMOS process, passes signals from 0.1mHz to 7.2kHz with an input-referred noise of 2.2/spl mu/Vrms and a power dissipation of 80/spl mu/W while consuming 0.16mm/sup 2/ of chip area.

Distributed active transformer-a new power-combining and impedance-transformation technique

Abstract: In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-/spl Omega/ input and output matching has been fabricated using 0.35-/spl mu/m CMOS transistors.

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Abstract: A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-/spl Omega/ match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any off-chip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-/spl Omega/ input and output matching has been fabricated using 0.35-/spl mu/m CMOS transistors. It achieves a power added efficiency (PAE) of 41 % at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time.

M-QAM-OFDM system performance in the presence of a nonlinear amplifier and phase noise

Abstract: The orthogonal frequency-division multiplexing (OFDM) modulation format has been proposed in Europe as the standard for broadcasting both audio and television digital signals and for wide-band wireless communication systems (e.g., HIPERLAN II). The performance of the OFDM scheme is severely affected by the nonlinearity of the high-power amplifier at the transmitter end and by the phase noise of the oscillators. In this paper, we investigate the joint effects induced on the OFDM signal by the amplifier nonlinearity and by the phase noise. An accurate statistical description of each contribution to the signal distortion is provided. Theoretical results show perfect agreement with those obtained by simulation and they can be used to derive the OFDM system performance, without the need to run extensive simulations.

Self-similar propagation of parabolic pulses in normal-dispersion fiber amplifiers

Abstract: Pulse propagation in high-gain optical fiber amplifiers with normal group-velocity dispersion has been studied by self-similarity analysis of the nonlinear Schrodinger equation with gain. For an amplifier with a constant distributed gain, an exact asymptotic solution has been found that corresponds to a linearly chirped parabolic pulse that propagates self-similarly in the amplifier, subject to simple scaling rules. The evolution of an arbitrary input pulse to an asymptotic solution is associated with the development of low-amplitude wings on the parabolic pulse whose functional form has also been found by means of self-similarity analysis. These theoretical results have been confirmed with numerical simulations. A series of guidelines for the practical design of fiber amplifiers to operate in the asymptotic parabolic pulse regime has also been developed.

High-power femtosecond Yb-doped fiber amplifier.

Abstract: We report on the generation of linearly chirped parabolic pulses with 17-W average power at 75 MHz repetition rate and diffraction-limited beam quality in a large-mode-area ytterbium-doped fiber amplifier. Highly efficient transmission gratings in fused silica are applied to recompress these pulses down to 80-fs with an efficiency of 60%, resulting in a peak power of 1.7 MW. Power scaling limitations given by the amplifier bandwidth are discussed.

The toughest transistor yet [GaN transistors]

Abstract: GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other key components of the advanced communications networks. GaN transistors could double or triple the efficiency of base-station amplifiers, so that a given area could be covered by fewer base stations or, more likely, be flooded with more data at much higher rates. These same characteristics of speed, high-power handling, and heat resistance would also suit the transistors for many other uses.

Parametric amplifiers driven by two pump waves

Abstract: The theory of parametric amplifiers driven by two pump waves is developed. By choosing the pump wavelengths judiciously, one can design an amplifier that produces uniform exponential gain over a range of wavelengths that extends at least 30 nm on either side of the average pump wavelength.

Broadband wireless repeater for mobile communication system

Abstract: Disclosed herewith is a broadband wireless repeater for a mobile communication system. The broadband wireless repeater generally includes a transmission stage and a receiving stage. The transmission stage includes an RF switch for establishing a frequency path, an Intermediate Frequency delay unit for applying delay to IFs and bypassing the IF delay, a frequency up conversion modulator, an amplifier, a filter unit for eliminating undesired band signals, and a transmitting side antenna. The receiving stage includes an array antenna, a band-pass filter unit for eliminating undesired band signals, an amplifier, a phase shifter for controlling phases of channels, a frequency down conversion modulator, a phase comparison unit, a gain comparison unit, a vector value optimizer for decreasing errors of the main signals with a maximum output, and a synthesizing module for detecting and storing output levels of the channels.

SiC and GaN transistors - is there one winner for microwave power applications?

Abstract: Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it has not been possible to design and fabricate solid-state transistors that can yield radio-frequency (RF) output power on the order of hundreds to thousands of watts. This has severely limited their use in power applications. Recent improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes. The most promising electronic devices for fabrication in wide bandgap semiconductors for these applications are metal-semiconductor field-effect transistors (MESFETs) fabricated from the 4H-SiC polytype and heterojunction field-effect transistors (HFETs) fabricated using the AlGaN/GaN heterojunction. These devices can provide RF output power on the order of 5-6 W/mm and 10-12 W/mm of gate periphery, respectively. 4H-SiC MESFETs should produce useful performance at least through X band and AlGaN/GaN HFETs should produce useful performance well into the millimeter-wave region, and potentially as high as 100 GHz.

Quantifying memory effects in RF power amplifiers

Abstract: This paper proposes a system-level behavioral model for RF power amplifiers (PAs), which exhibit memory effects, that is based on the parallel Wiener system. The model extraction is performed using two-tone intermodulation distortion (IMD) measurements with different tone frequency spacings and power levels. It is found that by using such a model, more accurate adjacent-channel power-ratio levels may be predicted for high PAS close to the carrier frequency. This is validated using IS-95B CDMA signals on a low-power (0.5 W) class-AB PA, and on a high-power (45 W) class-B PA. The model also provides a means to quantify memory effects in terms of a figure-of-merit that calculates the relative contribution to the IMD of the memoryless and memory portion of the PA nonlinearity. This figure-of-merit is useful in providing an estimate of the amount of correction that a memoryless predistortion system may have on PAS that exhibit memory effects.

Quasi-optical and spatial power combining

Abstract: Quasi-optical power-combining techniques have been developed to address fundamental limitations in solid-state devices and circuits. These techniques have been applied to oscillators, amplifiers, frequency-conversion components, and control circuits. This paper surveys progress in the development of quasi-optical array systems operating in the microwave and millimeter-wave regime, focusing primarily on the progress in power amplifiers.

Flat-panel light emitting pixel with luminance feedback

Abstract: An image display includes an addressable image display pixel, having a substrate; a light emitter formed on the substrate; a photo-sensor formed on the substrate and optically coupled to the light emitter to detect light emitted by the light emitter to generate a feedback voltage signal in response to light emitted by the light emitter; and, a feedback readout circuit formed on the substrate and responsive to the feedback voltage signal to provide a feedback signal representing the light output of the light emitter, the feedback readout circuit including a transistor amplifier, means for resetting the readout circuit, and a select switch.

Quantum-dot semiconductor optical amplifiers for high-bit-rate signal processing up to 160 Gb s -1 and a new scheme of 3R regenerators

Abstract: This paper presents a theory and simulation of quantum-dot semiconductor optical amplifiers (SOAs) for high-bit-rate optical signal processing. The theory includes spatial isolation of quantum dots, carrier relaxation and excitation among the discrete energy states and the wetting layer, grouping of dots by their optical resonant frequency under the inhomogeneous broadening, and the homogeneous broadening of the single-dot gain, which are all essential to the amplifier performance. We show that high-speed gain saturation occurs due to spectral hole burning under the optical pulse trains up to at least 160 Gb s-1 with negligible pattern effect, and that the self-assembled InGaAs/GaAs quantum-dot SOAs have about two to three orders faster response speed than bulk InGaAsP SOAs, with one order larger gain saturation for the 160 Gb s-1 signals. We also show that switching functions can be realized by the cross gain modulation between the two wavelength channels when the channel separation is within the homogeneous broadening. These results indicate great potential of quantum-dot SOAs for all-optical high-speed switches. As one of their possible applications, we propose a new signal-processing scheme of a `quantum-dot 3R regenerator'.

Organic oscillator and adaptive amplifier circuits for chemical vapor sensing

Abstract: Organic transistor based circuits that can be employed for chemical vapor sensing, are described. Such circuits have improved sensing characteristics in comparison with discrete transistor based sensors. Complementary ring oscillator based sensors have a stronger response to analytes such as octanol and allyl propionate compared to a single transistor. A fabrication process that combines organic semiconductor circuitry with Si is described. The design and advantages of adaptive differential amplifiers with high gain and feedback are described. Voltage gains of ∼20 allow the detection of weak odorant inputs and the adaptive feedback allows for improved background elimination.

Transconductance amplifier structures with very small transconductances: a comparative design approach

Abstract: A family of CMOS operational transconductance amplifiers (OTAs) has been designed for very small G/sub m/'s (of the order of nanoamperes per volt) with transistors operating in moderate inversion. Several OTA design schemes such as conventional, using current division, floating-gate, and bulk-driven techniques are discussed. A detailed comparison has also been made among these schemes in terms of performance characteristics such as power consumption, active silicon area, and signal-to-noise ratio. The transconductance amplifiers have been fabricated in a 1.2-/spl mu/m n-well CMOS process and operate at a power supply of 2.7 V. Chip test results are in good agreement with theoretical results.

A gyrotron-traveling-wave tube amplifier experiment with a ceramic loaded interaction region

Abstract: The design and experimental study of a 35-GHz gyrotron-traveling-wave tube (gyro-TWT) amplifier operating in the circular TE/sub 01/ mode at the fundamental cyclotron harmonic are presented. The interaction circuit in this experiment consisted of a new type of ceramic loading that provided the required loss for stable operation. A saturated peak power of 137 kW was measured at 34.1 GHz, corresponding to a saturated gain of 47.0 dB and an efficiency of 17%, with a -3-dB bandwidth of 1.11 GHz (3.3%). Peak output powers in the range of 102.1 to 148.6 kW with -3-dB bandwidths of 1.26 and 0.94 GHz, respectively, were measured by varying the operating parameters. The gyro-TWT was found to be zero-drive stable at these operating points, demonstrating that ceramic loading is a highly effective means of suppressing spurious oscillations in gyro-TWTs. This type of ceramic loading has the added advantage of being compatible with high average power operation.

A 6-b 1.6-Gsample/s flash ADC in 0.18-/spl mu/m CMOS using averaging termination

Abstract: The output averaging technique for input amplifiers of a flash ADC has been analyzed mathematically. Expressions have been derived for the reduction of differential nonlinearity, integral nonlinearity, and the necessary number of overrange amplifiers as a function of the output and averaging resistors. This theory is applied to design a 1.6-Gigasample/s 6-b flash ADC in baseline 0.18-/spl mu/m CMOS technology. A distributed track and hold is implemented to achieve a high sample rate. The small input signal is amplified through a cascade of amplifiers and gradually transformed into robust digital signal levels. An averaging termination circuit has been designed to resemble the infinite string of resistors and amplifiers. By applying termination to the averaging network, the amount of overrange amplifiers and, therefore, the power consumption is reduced, while the linearity and speed performance are maintained. The optimum number of parallel pre-amplifiers is derived on the basis of the tradeoff between the amplifier offset and distortion.

VLSI for wireless communication

Abstract: Communication Concepts: Circuit Designer Perspective.- Receiver Architectures.- Low Noise Amplifier.- Active Mixer.- Passive Mixer.- Analog-to-Digital Converters.- Frequency Synthesizer: Phase/Frequency Processing Components.- Frequency Synthesizer: Loop Filter and System Design.- Transmitter Architectures and Power Amplifier

Bi-directional amplifier module for insertion between microwave transmission channels

Abstract: A waveguide bi-directional amplifier module is illuminated by a downstream illumination source and an upstream illumination source. The illumination sources are coupled to an array having waveguide to microstrip converters that provide for upstream and downstream electrical signals. Switchable amplifiers provide for amplification in both directions for the electrical signals and the converters coherently combine the output of the amplifiers to provide increased power to the electromagnetic wave entering the waveguide.

Polarization-independent two-pump fiber optical parametric amplifier

Abstract: Fiber-optical parametric amplifiers can be rendered polarization-independent by using two pumps with orthogonal polarization states. We have analytically investigated and experimentally demonstrated, for the first time to our knowledge, a flat-gain polarization-independent continuous-wave fiber optical parametric amplifier with 15 dB of gain over a 20-nm bandwidth, by using two orthogonal pumps.

100-W average-power, high-energy nanosecond fiber amplifier

Abstract: We report on the fiber-based amplification of a Q-switched Nd:YAG thin-disk laser. At repetition rates between 3 and 50 kHz output powers up to 100 W are generated. Pulse energies up to 4 mJ, with diffraction-limited beam quality, are generated in a 30-μm Yb-doped large-mode-area fiber, furthermore pulse energies up to 8 mJ are achieved from a multimode fiber amplifier.