AND gate

About: AND gate is a research topic. Over the lifetime, 11860 publications have been published within this topic receiving 109726 citations.

Loadable up-down counter with asynchronous reset

Abstract: In an FPGA having four-input lookup tables (LUTs) with parallel two-input AND gates receiving two of the four LUT input signals, associated registers, and a carry chain receiving one input signal from the AND gate output, a loadable up-down counter is formed by connecting the register output to one of the terminals serving as both a LUT input terminal and an AND gate input terminal. A load control signal is connected to another input terminal common to the LUT and the AND gate. Thus the AND gate disables the carry chain during loading of the counter and applies the count value to the carry chain during counting.

Floating-point adder performing floating-point and integer operations

Abstract: An apparatus and a method are disclosed for performing both floating-point operations and integer operations utilizing a single functional unit. The floating-point adder performs logic for comparing exponents, logic for selecting and shifting a co-efficient, and logic for adding coefficients. In operation, the floating-point adder unit performs integer addition, subtraction, and compare operations using substantially the same hardware as used for floating-point operations. The output of the logic for comparing exponents represents the most significant bits of the result of the integer operation. The output of the logic for adding co-efficients represents the least significant bits of the result of the integer operation. If there is a carry from the logic for adding co-efficients, the value of the carry is added to the partial result representing the most significant bits of the integer operation. The floating-point adder permits all integer add, subtract and compare operations be performed by the floating-point adder without adding substantial additional hardware to the arithmetic logic unit.

Bistable element and a switch circuit comprising such a bistable element

Abstract: A bistable device comprises a thyristor having anode, cathode and gate electrodes and a transistor having emitter, collector and base electrodes, the emitter-collector path of the transistor being connected to the anode-cathode path of the thyristor. A first control input is connected to the gate of the thyristor for determining one stable state of the device and a second control input is connected to the base electrode of the transistor for determining the other stable state of the device. The first control input is connected through an amplifier to the gate of the transistor.

Multi-gate transistor and method for manufacturing the same

Abstract: In a semiconductor capable of reducing NBTI and a method for manufacturing the same, a multi-gate transistor includes an active region, gate dielectric, channels in the active region, and gate electrodes, and is formed on a semiconductor wafer. The active region has a top and side surfaces, and is oriented in a first direction. The gate dielectric is formed on the top and side surfaces of the active region. The channels are formed in the top and side surfaces of the active region. The gate electrodes are formed on the gate dielectric corresponding to the channels and aligned perpendicular to the active region such that current flows in the first direction. In one aspect of the invention, an SOI layer having a second orientation indicator in a second direction is formed on a supporting substrate having a first orientation indicator in a first direction. A multi-gate transistor is formed on the SOI layer. The first direction and the second direction are the same, or the first direction is at 45 degrees with respect to the second direction. In another aspect of the invention, the intersection of the top and side surfaces of the active region are curved, further reducing NBTI. In another aspect of the invention, a multi-gate transistor is formed on a shallow trench isolation region of a bulk wafer.