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AND gate

About: AND gate is a research topic. Over the lifetime, 11860 publications have been published within this topic receiving 109726 citations.


Papers
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Journal ArticleDOI
TL;DR: A complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200 V SiC MOSFETs from five different manufacturers including planar and trench-gate structures is presented.

25 citations

Patent
02 May 2005
TL;DR: In this paper, a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof are used for constituting a main circuit of the device.
Abstract: The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.

25 citations

Patent
Maurice de Jongh1
20 May 2014
TL;DR: In this paper, a device for switching a radio frequency (RF) signal includes two or more FET unit cells in a stacked or chain topology and gate or body node filtration circuitry that preserves RF equipotential nodes.
Abstract: A device for switching a radio frequency (RF) signal includes two or more field-effect transistor (FET) unit cells in a stacked or chain topology, and gate or body node filtration circuitry that preserves RF equipotential nodes. The filtration circuitry may be capacitive or resistive-capacitive. The filtration circuitry may be included in each unit cell of the device or in a gate or body bias network that is common to all unit cells in the device.

25 citations

Journal ArticleDOI
TL;DR: In this paper, a mesoscopic ring threaded by a magnetic flux was used to model the XNOR gate response in a mesoscopic ring threaded with magnetic flux, where the ring was attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages.
Abstract: We describe XNOR gate response in a mesoscopic ring threaded by a magnetic flux $\phi$ The ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, viz, $V_a$ and $V_b$, are applied in one arm of the ring which are treated as the inputs of the XNOR gate The calculations are based on the tight-binding model and the Green's function method, which numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strength, magnetic flux and gate voltages Our theoretical study shows that, for a particular value of $\phi$ ($=\phi_0/2$) ($\phi_0=ch/e$, the elementary flux-quantum), a high output current (1) (in the logical sense) appears if both the two inputs to the gate are the same, while if one but not both inputs are high (1), a low output current (0) results It clearly exhibits the XNOR gate behavior and this aspect may be utilized in designing an electronic logic gate

25 citations

Proceedings ArticleDOI
24 Jan 2006
TL;DR: It is demonstrated that statistical optimization can lead to more than 37% savings in nominal leakage compared to worst-case techniques that perform only gate sizing.
Abstract: This paper proposes a novel methodology for statistical leakage minimization of digital circuits. A function of mean and variance of the circuit leakage is minimized with constraint on a-percentile of the delay using physical delay models. Since the leakage is a strong function of the threshold voltage and gate length, considering them as design variables can provide significant amount of power savings. The leakage minimization problem is formulated as a multivariable convex optimization problem. We demonstrate that statistical optimization can lead to more than 37% savings in nominal leakage compared to worst-case techniques that perform only gate sizing.

25 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202310
202219
2021209
2020308
2019356
2018372