AND gate

About: AND gate is a research topic. Over the lifetime, 11860 publications have been published within this topic receiving 109726 citations.

Test generation in VLSI circuits for crosstalk noise

Abstract: This paper addresses the problem of efficiently and accurately generating two-vector tests for crosstalk induced effects, such as pulses, signal speedup and slowdown, in digital combinational circuits. These effects are becoming more prevalent due to short signal switching times and deep submicron circuitry. These noise effects can propagate through a circuit and create a logic error in a latch or at a primary output. We first present a new way for predicting the output waveform produced by an inverter due to a non-square wave pulse at its input. Our modeling technique captures such properties as the amplitude of a pulse and its rise/fall times and the delay through a device. To expedite the computation of the response of a logic gate to an input pulse, we have developed a novel way of modeling such gates by an equivalent inverter. We have developed a mixed-signal test generator that incorporates classical PODEM-like static values as well as dynamic signals such as transitions and pulses, and timing information such as signal arrival times, rise/fall times, and gate delay. We also present a new analog cost function that is used to guide the search process. Comparison of results with SPICE simulations confirms the accuracy of this approach. This paper focuses primarily on crosstalk induced pulses, but these results have been extended to deal with speedup and slowdown effects.

What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?

Abstract: Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs with the downscaling process of the channel gate length are analyzed experimentally and analytically. It is demonstrated that for MOSFETs with optimized source, drain and gate access, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction. Optimization of these internal parameters is needed to further improve the high frequency performance of ultra deep submicron MOSFETs.

Memory device with separate read and write gate voltage controls

Abstract: A circuit and method are provided for controlling the gate voltage of a transistor acting between local and global input/output lines of a memory device, the circuit including a local input/output line, a local from/to global input/output multiplexer in signal communication with the local input/output line, a global input/output line in signal communication with the local from/to global input/output multiplexer, and a local from/to global input/output controller having an input node and an output node, the input node disposed for receiving a signal indicative of an input or output operation, and the output node in signal communication with a gate of the local from/to global input/output multiplexer for providing a gate signal of a first or second level in the presence of the output operation, and a gate signal of a third level in the presence of the input operation.

An Advanced Fault Isolation System for Digital Logic

Abstract: Advances in integrated circuit technology are decreasing acquisition cost per function of digital hardware while system software costs are increasing. The hardware advances allow practical implementation of more sophisticated and complex systems which have fewer components, but which may present severe test and maintenance problems due to their complexity. As a result, the use of built-in test (BIT) hardware in place of software becomes increasingly attractive. The Navy funded Advanced Avionics Fault Isolation System (AAFIS) concept utilizes BIT logic for cost-effective fault detection and fault isolation to a digital subsystem and to the faulty module therein. Added logic, available at low cost with advanced microelectronics, is used to perform test pattern generation in each subsystem and to code over the test sequence the outputs and test points on each subsystem module. The coded test response is compared to a predetermined constant. The OR of resulting module pass-fail signals indicates subsystem faults, while identification of a module fail signal provides isolation to a faulty module. Practical coding techniques are presented, with tradeoff of speed, test effectiveness and logic requirements for each. BIT logic design and simulation results verify high fault detection and moderate added logic for BIT.

Short channel self-aligned VMOS field effect transistor

Abstract: A field effect transistor with a trench or groove gate having V-shaped walls is formed in a semiconductor substrate and a gate oxide is grown on the V-shaped walls to the surface of substrate and filled with a gate electrode material, such a polysilicon. Preferably, the bottom of the V-shaped walls are rounded before the trench is filled. Source/drain impurities either are diffused or implanted into the areas of the substrate on both sides of the surface oxide of the V-shaped gate. Contacts are made to the source, drain, and gate within field isolation to complete the structure. The resultant FET structure comprises a self aligned V-shaped gate having conventional source and drain surrounded by field isolation but with an effective channel length (Leff) of less than about one-half of the surface width of the gate. Preferably, the converging walls of the V-shaped gate end in a rounded concave bottom. Because of the V-shaped structure of the gate, the effective saturated length of the channel with drain voltage applied only extends from the edge of the source to just prior to the tip of the V-shaped structure in the interior of the semiconductor substrate. The drain side of the V-shaped structure becomes a depletion region due to the applied drain voltage. Due to this characteristic of such a structure, the surface width of the gate can be, for example, two or more times the distance of the desired channel length thereby permitting conventional lithography to be used to define the gate lengths much shorter than the lithographic limit.