AND gate

About: AND gate is a research topic. Over the lifetime, 11860 publications have been published within this topic receiving 109726 citations.

Hot-carrier instability in IGFET's

Abstract: Injection of hot carriers from the channel region into the gate insulator of an IGFET imposes design constraints on the device dimensions and operating voltages. A fraction of the injected charge is trapped in the gate dielectric, and an undesirable shift in the operating characteristics results. The magnitude of the shift is related to the device dimensions, operating voltages, and gate dielectric.

A novel design for quantum-dot cellular automata cells and full adders

Abstract: Quantum-dot Cellular Automata (QCA) is a novel and potentially attractive technology for implementing computing architectures at the nano-scale. The basic Boolean primitive in QCA is the majority gate. In this study we present a novel design for QCA cells and another possible and unconventional scheme for majority gates. By applying these items, the hardware requirements for a QCA design can be reduced and circuits can be simpler in level and gate counts. As an example, a one bit QCA adder is constructed by applying our new scheme. Beside, we prove that how our reduction method decreases gate counts and levels in comparison to the other previous methods.

Gate-length biasing for runtime-leakage control

Abstract: Leakage power has become one of the most critical design concerns for the system level chip designer. While lowered supplies (and consequently, lowered threshold voltage) and aggressive clock gating can achieve dynamic power reduction, these techniques increase the leakage power and, therefore, causes its share of total power to increase. Manufacturers face the additional challenge of leakage variability: Recent data indicate that the leakage of microprocessor chips from a single 180-nm wafer can vary by as much as 20/spl times/. Previously proposed techniques for leakage-power reduction include the use of multiple supply and gate threshold voltages, and the assignment of input values to inactive gates, such that leakage is minimized. The additional design space afforded by the biasing of device gate lengths to reduce chip leakage power and its variability is studied. It is well known that leakage power decreases exponentially and delay increases linearly with increasing gate length. Thus, it is possible to increase gate length only marginally to take advantage of the exponential leakage reduction, while impairing performance only linearly. From a design-flow standpoint, the use of only slight increases in gate length preserves both pin and layout compatibility; therefore, the authors' technique can be applied as a postlayout enhancement step. The authors apply gate-length biasing only to those devices that do not appear in critical paths, thus assuring zero or negligible degradation in chip performance. To highlight the value of the technique, the multithreshold voltage technique, which is widely used for leakage reduction, is first applied and then gate-length biasing is used to show further reduction in leakage. Experimental results show that gate-length biasing reduces leakage by 24%-38% for the most commonly used cells, while incurring delay penalties of under 10%. Selective gate-length biasing at the circuit level reduces circuit leakage by up to 30% with no delay penalty. Leakage variability is reduced significantly by up to 41%, which may lead to substantial improvements in the manufacturing yield and the product cost. The use of gate-length biasing for leakage optimization of cell instances is also assessed, in which: 1) not all timing arcs are timing critical and/or 2) the rise and fall transitions are not both timing critical at the same time.

Functional and logic programming

Abstract: proceedings of the 11th International symposium on Functional and Logic Programming (FLOPS 2012), held in Kobe, Japan, May 23-25, 2012

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

Abstract: Off-state leakage currents have been investigated for sub-100 nm CMOS technology. The two leakage mechanisms investigated in this work include conventional off-state leakage due to short channel effects and gate leakage through ultrathin gate oxides. The conventional off-state leakage due to short channel effects exhibited the similar characteristics as previously published; however, gate leakage introduces two significant consequences with respect to off-state power consumption: (1) an increase in the number of transistors contributing to the total off-state power consumption of the chip and (2) an increase in the conventional off-state current due to gate leakage near the drain region of the device. Using experimentally measured data, it is estimated that gate leakage does not exceed the off-state specifications of the National Technology Roadmap for Semiconductors for gate oxides as thin as 1.4 to 1.5 nm for high performance CMOS. Low power and memory applications may be limited to an oxide thickness of 1.8 to 2.0 nm in order to minimize the off-state power consumption and maintain an acceptable level of charge retention. The analysis in this work suggests that reliability will probably limit silicon oxide scaling for high performance applications whereas gate leakage will limit gate oxide scaling for low power and memory applications.