AND gate

About: AND gate is a research topic. Over the lifetime, 11860 publications have been published within this topic receiving 109726 citations.

All-optical AND and NAND gates based on cascaded second-order nonlinear processes in a Ti-diffused periodically poled LiNbO(3) waveguide.

Abstract: All-optical AND and NAND gates have been demonstrated in a Ti-diffused periodically poled LiNbO3 channel waveguide which has two second-harmonic phase-matching peaks by cascaded sum-frequency-generation/difference-frequency-generation (cSFG/DFG) and sum-frequency-generation (SFG) processes. The conversion efficiency of signal to idler (AND gate signal) was approximately 0 dB in cSFG/DFG process. In the second SFG process, more than 15 dB extinction ratio between signal and dropped signal (NAND gate signal) has been observed.

Insulated gate type semiconductor device and method of manufacturing thereof

Abstract: Plural grooves are formed in a main surface of semiconductor layers on semiconductor substrate, and gate layers connected to a gate electrode are formed in the plural grooves through a gate insulating film, and then a body diffusion layer is formed between the gate layers, and afterwards, a source diffusion layer connected to a source electrode and a source diffusion layer connected to a source electrode are formed in an identical process.

Layout Driven Logic Synthesis for FPGAs

Abstract: In this paper, we propose a layout driven synthesis approach for Field Programmable Gate Arrays (FPGAs). The approach attempts to identify alternative wires and alternative functions for wires that cannot be routed due to the limited routing resources in FPGA. The alternative wires (in the logic level) that can be routed through less congested areas substitute the unroutable wires without changing the circuit's functionality. Allowing the logic blocks to have alternative functions also increases the flexibility of routing. The redundancy addition and removal techniques are used to identify such alternative wires. Experimental results are presented to demonstrate the usefulness of this approach. For a set of randomly selected benchmark circuits, on the average, 30%-50% of wires have alternative wires. These results indicate that the routing flexibility can be substantially increased by considering these alternative wires. Our prototype system successfully completed the routing for two AT&T designs that cannot be handled by an FPGA router alone. The proposed synthesis technique can also be applied to standard cell and gate array designs to reduce the routing area.

Efficient Monte Carlo device modeling

Abstract: A single-particle approach to full-band Monte Carlo device simulation is presented which allows an efficient computation of drain, substrate and gate currents in deep submicron MOSFETs. In this approach, phase-space elements are visited according to the distribution of real electrons. This scheme is well adapted to a test-function evaluation of the drain current, which emphasizes regions with large drift velocities (i.e., in the inversion channel), a substrate current evaluation via the impact ionization generation rate (i.e., in the LDD region with relatively high electron temperature and density) and a computation of the gate current in the dominant direct-tunneling regime caused by relatively cold electrons (i.e., directly under the gate at the source well of the inversion channel). Other important features are an efficient treatment of impurity scattering, a phase-space steplike propagation of the electron allowing to minimize self-scattering, just-before-scattering gathering of statistics, and the use of a frozen electric field obtained from a drift-diffusion simulation. As an example an 0.1-/spl mu/m n-MOSFET is simulated where typically 30 minutes of CPU time are necessary per bias point for practically sufficient accuracy.

Dual metal gate CMOS devices and method for making the same

Abstract: A method of fabricating a dual metal gate CMOS includes forming a gate oxide in a gate region and depositing a place-holder gate in each of a n-well and p-well; removing the place-holder gate and gate oxide; depositing a high-k dielectric in the gate region; depositing a first metal in the gate region of the p-well; depositing a second metal in the gate region of each of the n-well and p-well; and insulating and metallizing the structure. A dual metal gate CMOS of the invention includes PMOS transistor and a NMOS transistor. In the NMOS, a gate includes a high-k cup, a first metal cup formed in the high-k cup, and a second metal gate formed in the first metal cup. In the PMOS, a gate includes a high-k cup and a second metal gate formed in the high-k cup.