scispace - formally typeset
Search or ask a question

Showing papers on "Annealing (metallurgy) published in 1973"


Journal ArticleDOI
TL;DR: In this article, the temperature dependence of electrical conductivity of rf-sputtered amorphous Ge, Si, and Ge-Si films as functions of annealing temperature and time have been investigated.
Abstract: The temperature dependence of electrical conductivity of rf-sputtered amorphous Ge, Si, and Ge-Si films as functions of annealing temperature and time have been investigated for $350\ensuremath{\gtrsim}T\ensuremath{\gtrsim}77$ K. Annealing shifts the hopping region to lower temperatures. We find that reasonable values of Mott's parameters are obtained only for properly annealed specimens in the true hopping-conduction region.

247 citations


Journal ArticleDOI
TL;DR: In this article, single crystal aluminium surfaces were prepared by auto-epitaxy on these substrates and the work functions of the surfaces were determined photoelectrically, showing a linear relationship between surface atom density and work function for the three faces investigated.
Abstract: (100), (110) and (111) single crystal aluminium substrates were thoroughly outgassed by heating by electron bombardment in ultra high vacuum. Fresh single crystal surfaces were prepared by autoepitaxy on these substrates and the work functions of the surfaces were determined photoelectrically. The general effect of the deposition of an aluminium film on the substrate was to reduce the work function, but annealing the film at temperatures between 473 K and 573 K caused the work function to return to a constant value which was taken to be characteristic of the ordered surface. (100) aluminium surfaces were also prepared by epitaxy on potassium chloride crystals. The effect of argon ion bombardment on a bulk (110) aluminium surface is to increase the work function towards the polycrystalline value, but the characteristic value for the (110) face may be restored by annealing the crystal. There is a linear relationship between surface atom density and work function for the three faces investigated.

140 citations


Journal ArticleDOI
TL;DR: In this paper, the effect of 300-keV proton bombardment and subsequent annealing on the optical absorption and electrical resistivity of bulk p-type GaAs has been studied.
Abstract: The effect of 300‐keV proton bombardment and subsequent annealing on the optical absorption and electrical resistivity of bulk p‐type (p=2×1018 and 1.4×1019 cm−3) GaAs has been studied. Proton doses were in the range 1013−1017 cm−2. It is found that bombardment‐induced optical absorption increases monotonically, but sublinearly, with proton dose. The shape of the optical transmission spectrum indicates that bombardment creates a distribution of energy levels extending into the forbidden gap. Activation energies for annealing of the optical absorption have been determined from isothermal annealing data and range from ∼1.5 to ∼3.4 eV, which indicates that at least two kinds of defects are involved. Current‐voltage measurements show that the average electrical resistivity of the bombarded layers goes through a maximum at ∼2.5×105 Ω cm at a proton dose of ∼3×1015 cm−2. It is shown that annealing can eliminate the bombardment‐induced optical absorption while still retaining a high electrical resistivity. The o...

132 citations


Journal ArticleDOI
TL;DR: In this article, the presence of electrically active defects in 1.0-MeV-IR-irradiated silicon was observed using thermally stimulated capacitance measurements, and the introduction of defects by annealing was observed.
Abstract: The presence of electrically active defects in 1.0-MeV-electron-irradiated silicon was observed using thermally stimulated capacitance measurements. Thermal-emission rates and activation energies of trapped majority carriers, impurity dependences, and annealing behavior of these defects were determined. The introduction of defects by annealing was observed. A total of 14 thermal-activation energies were measured. The oxygen-vacancy pair and the phosphorous-vacancy pair were correlated with thermal-activation energies of 174 and 471 meV through impurity dependences and annealing behavior. Comparison with other published data was made. The charge states were measured and it was found that the defects above midgap are acceptors; those below midgap are donors.

120 citations


Journal ArticleDOI
TL;DR: In this paper, the relationship between morphology and physical properties of amorphous poly-bisphenol-A carbonate was examined as a function of annealingtime at temperatures below the glass transition temperature (Tg).
Abstract: The relationship between morphology and several physical properties (tensile, thermal, dielectric, and dynamic mechanical properties) of amorphous poly-bisphenol-A-carbonate was examined as a function of annealingtime at temperatures below the glass transition temperature (Tg). The change in structure of the amorphous films was studied by means of X-ray diffraction and with electron diffraction using a rotating sector in an electron microscope as well as by electron micrographs of replicas of surfaces prepared by etching with dilute aqueous NaOH solutions. The changes in morphology and physical properties caused by annealing below Tg are, in general, closely related. The relationship cannot be explained only by changes in free volume; it is proposed that changes in the degree and type of order (nodular structure) also play a role. The design and application of the rotating sector is described in an Appendix.

116 citations


Journal ArticleDOI
TL;DR: In this paper, the authors describe a diffusion-controlled growth of Pd2Si on amorphous Si substrates with a t 0.5 dependence on the substrate orientation.

111 citations


Journal ArticleDOI
TL;DR: In this article, the influence of annealing on the concentration profiles of boron implanted into silicon with does of 1014 ions/cm2 up to 1016 ions/ cm2 and an energy of 70 keV was studied.
Abstract: The influence of annealing on the concentration profiles of boron implanted into silicon with does of 1014 ions/cm2 up to 1016 ions/cm2 and an energy of 70 keV was studied. The concentration profiles were measured with Secondary Ion Mass Spectrometry (SIMS). The broadening of the concentration profiles during annealing can be described as a superposition of effects resulting from a relatively immobile and a mobile boron fraction. The properties of the immobile boron fraction were studied by measuring the influence of a boron implantation on the distribution of a homogeneous boron background dope. From these experiments it was concluded that the immobile boron fraction consists of boron precipitates. The properties of the mobile fraction were studied from concentration profiles that were obtained after annealing during different periods at the same temperature. It was found that during the initial stage of the annealing process a fast broadening of the profile occurs; this was assumed to be due to an interstitial type boron diffusion. After prolonged annealing the much slower substitutional type diffusion prevails, due to trapping of the interstitial boron atoms by vacancies. The reliability of the SIMS method, as applied to profile measurements, was checked for the high boron doses used in this investigation. Excessive boron precipitates, obtained after annealing of a high dose, such as 1016 ions/cm2 at about 1000°C, appear to give some increase of the ion yield.

96 citations


Journal ArticleDOI
TL;DR: In this article, the orientation relations between cementite, ferrite and austenite as well as morphological aspects of the transformation were examined in the presence of a suitable iron-manganese-carbon alloy.
Abstract: By choice of a suitable iron—manganese—carbon alloy it has been possible to study pearlite nodules growing in austenite, without the austenite transforming on cooling to room temperature. Thin foil electron microscopy has been used to examine the orientation relations between cementite, ferrite and austenite as well as morphological aspects of the transformation. It is shown that one of the classical ferrite—cementite orientation relations found in pearlite (Pitsch—Petch) arises when the pearlite colonies nucleate on ‘clean’ austenite grain boundaries. The other familiar relation (Bagaryatski) arises when the colonies nucleate on pre-existing hyper-eutectoid cementite layers at the austenite grain boundaries. Some observations are made on the mode of nucleation of the pearlite nodules.

74 citations


Journal ArticleDOI
TL;DR: In this paper, the phase composition of aluminium films after bombardment with boron, carbon, nitrogen, phosphorus, and arsenic ions is investigated by the electron-diffraction method.
Abstract: The phase composition of aluminium films after bombardment with boron, carbon, nitrogen, phosphorus, and arsenic ions is investigated by the electron-diffraction method. It is shown that in all the cases except of bombardment with B+ ions the known compounds of aluminium with the indicated species are formed. The phase formed as a result of B+ bombardment could not be identified with the known aluminiumborides. It is shown that the texture of the formed phases is determined by the texture of the initial aluminium films indicating the epitaxial (or endotaxial) character of growth of these phases. In some cases AIP and AlAs phases are formed in an amorphous state. This is explained by insufficient substrate temperature for the crystallization or by amorphization under ion beam action. It is further shown that at bombardment of α-iron films with C+ ions ϵ-carbide is formed which after annealing at T ≧ 300 °C transforms into cementite. [Russian Text Ignored].

70 citations


Journal ArticleDOI
TL;DR: In this article, the authors present results obtained on rapid solidification of aluminium-silicon alloys from the liquid state, and show that the limit of primary solid solubility is extended almost to the eutectic composition and that the large supersaturation is relieved on raising the annealing temperature to the range 110 to 450° C.
Abstract: This paper present results obtained on rapid solidification of aluminium-silicon alloys from the liquid state. It shows that the limit of primary solid solubility is extended almost to the eutectic composition and that the large supersaturation is relieved on raising the annealing temperature to the range 110 to 450° C. This conclusion is based on measurements of lattice parameter and is also supported by corresponding changes in hardness and metallographic features.

64 citations


Journal ArticleDOI
TL;DR: In this article, a study of the annealing behavior of a cold-orked copper-25 at.% gold alloy over a range of temperature including both the ordered and disordered phases was made.

Journal ArticleDOI
TL;DR: In this paper, the properties of silicon implanted with boron ions through thermal SiO2 films were studied using sheet resistivity measurements (corroborated by Hall data).
Abstract: The properties of silicon implanted with boron ions through thermal SiO2 films were studied using sheet resistivity measurements (corroborated by Hall data). Electrical properties for implants through 0.1 μm of SiO2, as compared to bare silicon, showed no unusual behavior as a function of anneal temperature. Sheet resistivity measurements as a function of SiO2 thickness for fixed ion energy, and as a function of energy for fixed oxide thickness were made after 525 and 925°C anneals, for boron doses of 1013, 1014 and 1015 ions/cm2. The profile of boron ions in SiO2 is near Gaussian for the energy range investigated and the stopping power is 0 to 20% lower than the theoretical value currently in the literature. Considerations for device manufacture are discussed in light of the results.

Journal ArticleDOI
TL;DR: In this article, low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons, and correlations of the properties of these bands are made with known Si defects.
Abstract: Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Journal ArticleDOI
TL;DR: In this paper, a stable defect structure was observed in high-dose (1015 −1016 ions/cm2) arsenic implantations into Si, which resulted from implantations through thin SiO2 films covering the Si.
Abstract: During a study of the annealing of damage produced by high‐dose (1015–1016 ions/cm2) arsenic implantations into Si, a stable high‐defect‐density structure was observed. It resulted from implantations through thin SiO2 films covering the Si. Formation of the stable defect structure is related to the presence of the SiO2 film during implantation, but not during annealing. Subsequent experiments indicate that knock‐on of oxygen by the As ions is not directly responsible for the effect.

Journal ArticleDOI
L. Lassak1, K. Hieber1
TL;DR: In this article, it was shown that at an oxygen partial pressure of 1 x 10-6 torr the TCR became negative and that the films had a structure corresponding to a distorted b.c. Cr lattice, which did not change even after annealing for several hours at 300 °C.

Journal ArticleDOI
TL;DR: In this paper, the anomalous properties of a cold sapphire film are attributed to structural disorder and analyzed in terms of a two phase model using a two-phase model.
Abstract: Silver films formed on a cold sapphire substrate and studied prior to annealing exhibit a very different optical absorption from that typical of an annealed silver film. In particular a film formed and studied at 140 K showed a greatly reduced plasmon energy and a large anomalous absorption band centred at 2.4 eV. Annealing the film at RT caused a return to properties typical of an annealed film, although small but distinct differences remained between the Drude behaviour of the two films formed at different temperatures. The anomalous properties of the cold film are ascribed to structural disorder. The behaviour is analysed in terms of a two phase model.

Journal ArticleDOI
TL;DR: In this paper, the formation of the V4-center and the HA-center during thermal annealing in pure and Na+- and Li+-doped KBr, X-irradiated at low temperatures, is studied.

Journal ArticleDOI
TL;DR: The post-irradiation annealing behavior of polycrystalline β-SiC for use as a monitor of irradiation temperature was discussed in this paper, where powder and rods were irradiated to 1.5 × 10 17 to 5.0 × 10 19 n/cm 2 (E > 0.18 MeV).

Patent
14 Mar 1973
TL;DR: In this article, a low energy, high density ion implantation and kinetic transport deposition of refractory or other materials is carried out under very high vacuum conditions, which facilitates formation of large area, highly doped, shallow semiconductor junctions and the associated electrodes.
Abstract: Combined low energy, high density ion implantation and kinetic transport deposition of refractory or other materials is carried out under very high vacuum conditions. The process facilitates formation of large area, highly doped, shallow semiconductor junctions and the associated electrodes. The steps of preimplantation cleaning, ion implantation for junction formation, ohmic contact formation by kinetic transport deposition, and postimplantation anneal all are carried out in the same chamber. Under high vacuum, pre-implantation cleaning and annealing of semi-conductor substrates is accomplished by electron bombardment and concomitant heating from an annular flood filament. Next a conical electron beam vaporizes solid source material within the evacuated chamber, ionizing some of the vaporized particles. The result is a plasma expansion source including ions which are accelerated electrostatically for implantation in the target, and atoms which are kinetically transported toward the target to form an ohmic contact or other metalization layer. Additional build-up of kinetically transported material occurs after ion implantation is complete. Post-implantation annealing is carried out using electron bombardment to heat the targets to above an annealing threshhold for a period of time short enough so that no undesirable diffusion occurs. The substrates then are rapidly forced cooled. Repeating the process using another source permits different refractory materials to be layered. The combined kinetic transport deposition and ionimplantation into the underlying stratum effectively bonds the second material to the previously deposited layer.

Journal ArticleDOI
TL;DR: In this paper, the anodization of Si in a 1 MHz oxygen plasma is described, and the dependence of ionic current on oxide field strength is found to be dependent on oxide thickness.
Abstract: The anodization of Si in a 1 MHz oxygen plasma is described. In‐situ film thickness measurements were made using a single angle "s" light reflectance technique and this data, coupled with information on the variation of sample voltage with thickness, was used to determine the dependence of ionic current on oxide field strength. The data for a given oxide thickness could be described by an equation of the form given by the theory of ionic conduction by a thermally activated, field‐assisted process. However, the ionic current and, in paticular, the oxide field strength were dependent on oxide thickness. MOS C‐V measurements on oxides of different thickness indicated a change in flatband voltage that could be attributed to a progressive build‐up of positive charge within the oxide. This space charge could be reduced by a low temperature annealing treatment. The oxides were found to be slightly absorbing optically, to have a relative permittivity in the range 3.5–3.9, and to possess good insulation properties as long as the oxide thickness did not exceed about 2500â.

Journal ArticleDOI
TL;DR: In this article, the influence of high temperature annealing and heavy current treatments of porous Pt electrodes was investigated with scanning electron microscopy, and it was demonstrated that both the structure and the catalytic activity are influenced by the treatments.
Abstract: The influence of high temperature annealing and heavy current treatments of porous Pt electrodes is investigated with scanning electron microscopy. The results are discussed on the basis of the kinetic behaviour of these electrodes, known from the literature or deduced from our still unpublished results. It is demonstrated that both the structure and the catalytic activity are influenced by the treatments.

Patent
09 Oct 1973
TL;DR: In this article, a single-oriented electrical steel sheet having a high magnetic induction can be produced by hot rolling a silicon steel raw material containing less than 0.06% of C and less than 4% of Si, subjecting to annealing step and cold rolling step conveniently repeatedly to form a cold rolled steel sheet.
Abstract: Single-oriented electrical steel sheets having a high magnetic induction can be produced by hot rolling a silicon steel raw material containing less than 0.06% of C and less than 4% of Si, subjecting to annealing step and cold rolling step conveniently repeatedly to form a cold rolled steel sheet having a final gauge and subjecting to a decarburization annealing and a final annealing to develop secondary recrystallized grains having (110)[001] orientation, said silicon steel raw material being characterized in containing 0.005-0.200% of Sb and less than 0.10% of at least one of Se and S. Said final annealing for secondary recrystallization at a temperature of 800°-920°C gives a preferable result.

Journal ArticleDOI
TL;DR: The isochronal annealing behavior of electroplated 1.2 µm Ni-Fe thin films containing 80 wt% Ni, in the temperature range from 373° to 773°K, and with a magnetic field parallel to the easy axis of the films, was investigated in this paper.
Abstract: The isochronal annealing behavior of electroplated 1.2 µm Ni-Fe thin films containing nominally 80 wt% Ni, in the temperature range from 373° to 773°K, and with a magnetic field parallel to the easy axis of the films, was investigated through measurements of the films’ structural, magnetic and electrical properties. The effects of annealing could be described in terms of two annealing stages. In stage I, occurring up to about 575°K, recovery took place along with some pairordering, resulting in small decreases in the coercivity, the easy axis dispersion and the electrical resistivity; the apparent anisotropy field increased in this stage. The stage II of annealing, occurring above 575°K, was characterized by more defect annealing, a change in the texture and possibly some long-range ordering. This stage resulted in increases in the coercivity and the dispersion, along with decreases in the apparent anisotropy field, the apparent strain sensitivity and the relative permeability. The results of both annealing stages are discussed in terms of the structural changes.

Journal ArticleDOI
TL;DR: In this article, annealing of Gap, GaAs, GaP, GaSb, and GaAsP was studied without warm-up and as a function of isochronal anneal temperatures.
Abstract: Undoped Gap, GaAs, GaAsP, and GaSb were implanted near liquid-nitrogen temperature with 110 keV Zn ions. Implantations with O, Sb, and Xe between 110 and 150 keV were performed for comparison. The implantation-induced lattice disorder was studied without warm-up and as a function of isochronal anneal temperatures by ion channeling and backscattering measurements using 1.5 MeV He+ or 450 keV protons. For low-fluence implants where the initial disorder peak is ≲30% of the level for amorphous layer formation, the annealing is found to be characteristic only of the target compound. Broad anneal stages centered at 320, 250, and 290 K are observed for Gap, GaAs, and GaSb, respectively. GaAsP annealing occurs at temperatures intermediate between that for GaP and GaAs. For higher fluence implants, where channeling measurements indicate that an amorphous layer is formed, the disorder annealing is strikingly similar for the III-V compounds studied with a single annealing stage centered at 530 K. The scatte...

Journal ArticleDOI
01 Mar 1973
TL;DR: In this paper, it is proposed that the "annealing textures" in low stacking-fault energy (SFE) bronzes and brasses originate with the formation and growth of second-generation twins.
Abstract: Texture analyses, supported by transmission electron microscopy, have shown that in a 10 pct tin bronze, texture changes do not take place until a considerable fraction of the heavily deformed material has recrystallized. Much of the “primary recrystallization” texture is, accordingly, made up of the (110)«112» component which has grown from the polygonized subgrains in the cold-worked metal. The “annealing textures” described in the literature initiate during the latter stages of primary recrystallization and evolve to significant proportions with grain growth. It is proposed that the “annealing textures” in low stackingfault energy (SFE) bronzes and brasses originate with the formation and growth of second-generation twins.

Journal ArticleDOI
TL;DR: In this article, the electrical and optical properties of proton-battered p and n-type liquid-encapsulated Czochralski-grown GaP have been investigated as a function of 300 keV proton dose and subsequent annealing.
Abstract: The electrical and optical properties of proton‐bombarded p‐ and n‐type liquid‐encapsulated Czochralski‐grown GaP have been investigated as a function of 300‐keV proton dose and subsequent annealing. Proton bombardment of GaP introduced lattice damage into a surface layer equivalent in thickness to the proton penetration range, and resulted in a large increase in the electrical resistivity, as well as an increase in optical absorption of this damaged surface layer. The thickness of the damaged layer increased linearly with proton energy at approximately 1.0 μ/100 keV in the energy range from 100 to 300 keV. Electrical resistivity in both p‐ and n‐type samples increased with proton dose to a maximum of ∼1014 Ω cm at a dose of 4×1014 protons/cm2, and then the resistivity decreased with increasing dose. Optical absorption spectra indicated a continuous distribution of energy levels extending into the band gap. The absorption at 6328 A (visible red) increased monotonically with proton dose from ∼10% and 1014 protons/cm2 at 300 keV to ∼90% at 1017 protons/cm2. Layers approximately 3.0 μ thick have been produced which have high electrical resistivity (> 1010 Ωcm) and relatively low optical absorption (< 10%). The activation energies governing the annealing of the optical and electrical defects are in the range from 2 to 4 eV. The existence of large activation energies for the annealing of bombardment‐induced high resistivity implies high stability near room temperature. This stability combined with ease of forming high‐integrity pinhole‐free layers of controlled thickness on GaP substrates suggests useful applications in the GaP device fabrication technology. Many qualitative similarities have been observed between the proton‐bombarded GaP examined here and the bombarded p‐type GaAs discussed in the previous paper.

Patent
Joel P. Clark1
21 Dec 1973
TL;DR: In this article, a process for increasing the tensile strength of a martensitic alloy of titanium and nickel and for improving the alloy's ability to retain its original properties during use by stabilizing it against progressive elongation was proposed.
Abstract: A process for increasing the tensile strength of a martensitic alloy of titanium and nickel and for improving the alloy's ability to retain its original properties during use by stabilizing it against progressive elongation when cycled through successive martensitic transformations. The process comprises maintaining the alloy under a tensile stress of between about 30,000 and 100,000 psi while annealing the alloy at a temperature above a first diffusional phase transformation temperature. The first diffusional phase temperature is the first temperature above the martensitic transformation range at which there is a negative slope in the electrical resistivity versus temperature curve for the alloy. The product of this process has a tensile strength of at least about 175,000 psi and a martensitic elongation activity under stress of at least about 2% and will survive over one million martensitic transformation cycles when placed under sufficient stress that the elongation activity is about 2%.

Journal ArticleDOI
TL;DR: In this article, a superconductive tunneling method was used to study how structural order affects the phonon distribution, and in particular the appearance of localized impurity modes, As solute, 10 at.
Abstract: Quench-condensed lead-based alloy films were investigated by the superconductive tunneling method to study how structural order affects the phonon distribution, and in particular the appearance of localized impurity modes, As solute, 10 at. % of either Na, Mg, Zn, Ga, Ge, Ag, Cd, In, Sn, Sb, or Te was used. The films were condensed upon a substrate at 0.4 K and studied as deposited and after anneals to 30, 100, and 300 K. It was found that the shape of the phonon-induced tunneling structure could be used as a means to classify the state of structural order in the films. Temperatures of transformations from one state to another could be identified with those where steps occurred in curves of film resistance vs. annealing temperature. The most notable transformation was the one that took the film from an amorphous to a finely grained crystalline state. The transformation temperature scales with the melting point of the pure impurity element of the binary alloy. As the annealing temperature was increased further another temperature region was reached where the crystallites grew in size, causing notable changes in the phonon spectra. A third transformation occurred at low temperatures within the amorphous state for a few of the alloys.

Journal ArticleDOI
S. Krongelb1, A. Gangulee, G. Das
TL;DR: The figure of merit of magnetoresistive permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments as mentioned in this paper.
Abstract: The figure of merit of magnetoresistive Permalloy thin films, which are commonly used for bubble domain sensors, is shown to improve considerably after annealing treatments. This improvement is caused by a lowering of the electrical resistivity, due to particle size and grain growth with activation energies of 0.70 ± 0.05 eV and 1.86 ± 0.15 eV, respectively. Comparisons indicate that thin permalloy films, which are deposited at 250°C and subsequently annealed, are superior as sensor materials to those deposited at 325°C.

Journal ArticleDOI
TL;DR: In this paper, isothermal and isochronal annealing measurements were performed on heavily Si-doped GaAs and infrared reflectivity measurements were used to determine the free-carrier concentration after each GaAs stage.
Abstract: Isothermal and isochronal annealing measurements were performed on heavily Si‐doped GaAs. Infrared reflectivity measurements were used to determine the free‐carrier concentration after each annealing stage. A factor of [inverted lazy s]5 decrease in free‐carrier concentration was observed as a result of annealing at temperatures as low as 400°C. This annealing effect can be important when fabricating devices using GaAs: Si. Possible explanations of this effect are discussed.