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Annealing (metallurgy)

About: Annealing (metallurgy) is a research topic. Over the lifetime, 74877 publications have been published within this topic receiving 1017898 citations.


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Journal ArticleDOI
TL;DR: In this article, the strength and ductility of UFG aluminum and iron fabricated by ARB and annealing were clarified in the grain sizes ranging from 200 nm to 20 μm.

1,021 citations

Journal ArticleDOI
06 Sep 2012-Nature
TL;DR: Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature, which is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that ofthin- film transistors based on thermally annealed materials.
Abstract: A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated. Solution-processable metal-oxide semiconductors are attractive materials for low-cost, flexible electronics, but the need to anneal the deposited materials at relatively high temperatures limits the range of substrates on which such devices can be fabricated. Now Yong-Hoon Kim and colleagues demonstrate that irradiating the solution-cast films with deep ultraviolet light can obviate the need for an annealing step. In this system, photochemical activation serves essentially the same purpose as annealing, and the resulting semiconducting materials have device performance levels comparable to those produced using the high-temperature techniques. Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors1,2,3,4,5,6,7. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates8,9,10,11,12,13. But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature2,14,15,16,17,18,19, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm2 V−1 s−1 (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.

956 citations

Journal ArticleDOI
TL;DR: In this article, the effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO2) substrate on the physical and electrical properties of the transferred graphene are studied X-ray photoelectron spectroscopy and atomic force microscopy.
Abstract: The effects of residues introduced during the transfer of chemical vapor deposited graphene from a Cu substrate to an insulating (SiO2) substrate on the physical and electrical of the transferred graphene are studied X-ray photoelectron spectroscopy and atomic force microscopy show that this residue can be substantially reduced by annealing in vacuum The impact of the removal of poly(methyl methacrylate) residue on the electrical properties of graphene field effect devices is demonstrated, including a nearly 2 × increase in average mobility from 1400 to 2700 cm2/Vs The electrical results are compared with graphene doping measurements by Raman spectroscopy

936 citations

Journal ArticleDOI
TL;DR: In this paper, the variation in surface composition of CuO and Cu2O with a variety of high-vacuum treatments, including vacuum annealing, oxidation and hydrogen reduction, was studied.
Abstract: Using XPS and x-ray-excited Auger electron spectroscopy (XAES), we have studied the variation in surface composition of CuO and Cu2O with a variety of high-vacuum treatments, including vacuum annealing, oxidation and hydrogen reduction. Prolonged annealing of CuO results in the formation of a thick layer of Cu2O at the surface whilst vacuum annealing of Cu2O produces a thin (possibly one monolayer) film of Cu metal. Both bulk Cu2O and the thick Cu2O film generated from vacuum-annealed CuO were oxidized to CuO by heating at 800 K in 1×10-4 mbar O2, the original surface being regenerated with vacuum annealing at the same temperature. Both CuO and Cu2O are reduced to metal at the surface by heating in 1×10-4 mbar hydrogen at 400 K. In the case of CuO, the extent of reduction varies with the thermal history of the sample, with prolonged vacuum annealing producing a more reducible surface. Hydrogen-reduced CuO and Cu2O were both reoxidized on vacuum annealing, demonstrating the diffusion of lattice oxygen to the surface.

934 citations

Journal ArticleDOI
TL;DR: In this paper, the effects of boron additions on grain-boundary chemistry and tensile properties of Ni3Al containing 24-26 at.% Al were studied, and the results suggest that alloy stoichiometry strongly influences grain-body chemistry, which in turn affects the grainboundary cohesion.

920 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202294
20211,879
20202,509
20192,722
20182,719
20172,881