Topic
Annealing (metallurgy)
About: Annealing (metallurgy) is a research topic. Over the lifetime, 74877 publications have been published within this topic receiving 1017898 citations.
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TL;DR: In this paper, a near-fully dense Ti6Al4V alloy was successfully fabricated by SLM additive manufacturing and the acicular martensite α′ microstructure was considerably optimized by the formation of α+β phase via annealing treatment.
29 citations
TL;DR: In this article, a novel method for synthesizing layered niobate (K4Nb6O17) thin films was developed by using niobium-chelated precursor.
29 citations
TL;DR: In this paper, relaxor ferroelectric thin films of 0.7Pb(Mg1/3Nb2/3)O-3-0.3PbTiO(3) (PMN-PT) with and without template layers were studied.
29 citations
TL;DR: In this article, the near-band-edge cathodoluminescence of doped diamonds was studied at low temperatures, and the analysis of the spectra yields 630 meV activation energy of the phosphorus-related donor consistent with the estimate from the bound exciton spectra.
Abstract: Near-band-edge cathodoluminescence of doped diamonds was studied at low temperatures. The doped diamonds were prepared either during the CVD growth of the diamond films by adding boron, phosphorus, or lithium sources to the reaction gases, or alternatively by ion implantation of boron, phosphorus, sodium, or arsenic. Observation of the boron bound exciton after boron implantation and annealing above 1200 °C is taken as evidence that this acceptor species was successfully incorporated on substitutional lattice sites. Similarly, doping by phosphorus either during growth or by ion implantation and subsequent annealing leads to the emission of a bound exciton transition at 5.175 eV. Assuming Haynes' rule to be valid we estimate a donor ionization energy of nearly 640 meV for the phosphorus-related impurity. Discrete donor-acceptor pair transitions are observed in the near-band-edge region in diamonds which contain both phosphorus and boron in low concentrations. The analysis of the spectra yields 630 meV activation energy of the phosphorus-related donor consistent with the estimate from the bound exciton spectra.
29 citations
TL;DR: In this article, the recrystallization texture development during annealing of cold rolled Ni{sub 3}Al polycrystals and single crystals was investigated, and it was shown that the texture in single crystals, regardless whether boron-free or borón-doped, comprised all eight 35{degree} rotations of the single component deformation texture (close to the brass orientation).
29 citations