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Showing papers on "Anodic bonding published in 1969"


Journal ArticleDOI
TL;DR: In this paper, a new process is described which permits the sealing of metals to glass and other insulators at temperatures well below the softening point of the glass, by applying a dc voltage in excess of a few hundred volts between the glass and the metal in such a way that the former is at a negative potential with respect to the latter.
Abstract: A new process is described which permits the sealing of metals to glass and other insulators at temperatures well below the softening point of the glass. Sealing is accomplished in about 1 min by applying a dc voltage in excess of a few hundred volts between the glass and the metal in such a way that the former is at a negative potential with respect to the latter. The process has been applied to a number of glass‐metal combinations. A discussion is presented of some of the mechanisms which are believed to play a role in the bonding process.

800 citations


Patent
03 Feb 1969
TL;DR: A relatively stiff shank, a wire guide and a bonding tip of relatively hard, slightly ductile, inert material was used for wire lead bonding in this article, where the shank was replaced by an inert material.
Abstract: A bonding tool for wire lead bonding including a relatively stiff shank, a wire guide and a bonding tip of relatively hard, slightly ductile, inert material.

32 citations


Patent
Alexander Coucoulas1
21 Nov 1969
TL;DR: In this paper, a compliant medium is used to hold the workpieces during the bonding of two workpieces by ultrasonic or thermocompression techniques, and the compliant medium eliminates the problem of size differences, as well as wear, mis-alignment and the like, and a good bond is achieved in each instance.
Abstract: The bonding of two workpieces by ultrasonic or thermocompression techniques requires the use of a rigid bonding tip or ram to transmit the bonding energy, whether it be vibratory, mechanical and/or thermal. In time, such a rigid medium is subject to wear, to mis-alignment and to pickup of material from the workpieces, the latter causing the upper workpiece to stick to the tip. Further, such a rigid medium cannot be used reliably to make a number of bonds simultaneously, because minor size differences in the workpieces can prevent a good couple for energy transmission from being established to every workpiece. It has been discovered that a compliant or deformable medium can be employed to hold the workpieces during bonding. By deforming around the workpieces, the compliant medium eliminates the problem of size differences, as well as wear, mis-alignment and the like, and a good bond is achieved in each instance. In one aspect, the bonding energy is transmitted through the compliant medium to make the bond. In a second aspect, the bonding energy is transmitted through the support for the workpieces. The quality of individual bonds is improved because, for a given set of bonding conditions, there is less deformation of the workpieces than with conventional techniques. The invention is particularly applicable to the bonding of beam-lead transistors and integrated circuits to substrates, to bonding a plurality of leads to integrated circuit and thin film devices, and to bonding brittle single crystal chips to substrates.

24 citations


Patent
28 Oct 1969
TL;DR: In this paper, the beam-leads of a semiconductor element are compressed between the ribbons and the metallized areas of a substrate for compliant beam-branching.
Abstract: Apparatus for compliant bonding beam-leads of a semiconductor element to metallized areas of a substrate. Lengths of uniform ribbon of a deformable material are disposed between a heated bonding tool and the beam-leads. The bonding tool is pressed against the lengths of ribbon to compress the beam-leads between the ribbons and the metallized areas for bonding. After bonding, the used lengths of ribbon are replaced by new lengths from continuous supplies stored on reels.

18 citations


Patent
22 Oct 1969
TL;DR: In this article, a PROTECTIVE LAYER of SILICON NITRIDE is deployed on the surface of the WAFER, and a GLASS HANDLE BODY HAVING a THERMAL EXPANSION COEFFICIENT CLOSELY MATCHING that of SILION is SEALED to the SILICon NITride LAYer.
Abstract: AN ARRAY OF DEVICES IS FIRST FORMED IN A SILICON WAFER. A PROTECTIVE LAYER OF SILICON NITRIDE IS DEPOSITED ON THE SURFACE OF THE WAFER, AND A GLASS HANDLE BODY HAVING A THERMAL EXPANSION COEFFICIENT CLOSELY MATCHING THAT OF SILICON IS SEALED TO THE SILICON NITRIDE LAYER. THAT PORTION OF THE WAFER BETWEEN ADJACENT DEVICES IS ETCHED AWAY, AND A BODY OF A SOFTENED GLASS WHICH HAS A LIKE EXPANSION COEFFICIENT, BUT IS LESS REFRACTORY THAN THE GLASS HANDLE BODY, IS HOT-PRESSED INTO THE ARRAY OF ISOLATED DEVICES. THE HANDLE BODY IS THEN REMOVED BY ETCHING. D R A W I N G

16 citations


Patent
03 Nov 1969
TL;DR: In this article, it is believed that the oxidation-reduction cycle produces a perfectly clean or nascent surface which facilitates bonding, and yields are improved by initially providing a very thin plated coating of silver, copper or nickel, or combinations thereof, on one workpiece.
Abstract: Excellent bonds between usually-brazed metals are obtained, without brazing or soldering alloys, by initially oxidizing the surfaces to be bonded and then bonding in a reducing atmosphere at a temperature below the melting point of either metal. If the metals form a eutectic, bonding will be carried out above the eutectic temperature. It is believed that the oxidation-reduction cycle produces a perfectly clean or nascent surface which facilitates bonding. Yields are improved by initially providing a very thin plated coating of silver, copper or nickel, or combinations thereof, on one workpiece.

14 citations


Patent
18 Jul 1969
TL;DR: In this paper, a method of bonding sheet material having a very low coefficient of friction to a substrate such as rubber, felt or the like, which comprises providing, as an uncured bonding material, cotton textile fabric impregnated with a thermosetting general purpose phenolic resin; buffing the surface of the substrate; placing thereon a ply of the uncured binding material; placing the low-coefficient material upon the bonding layer and then vulcanizing the assembly.
Abstract: Method of bonding sheet material having a very low coefficient of friction to a substrate such as rubber, felt or the like, which comprises providing, as an uncured bonding material, cotton textile fabric impregnated with a thermosetting general purpose phenolic resin; buffing the surface of the substrate; placing thereon a ply of the uncured bonding material; placing the lowcoefficient material upon the bonding layer and then vulcanizing the assembly.

8 citations


Patent
13 Jun 1969
TL;DR: In this article, a 0,1 to 3 micron thick electrically conducting glass layer is used to leak charge formed on the insulator to the adjacent P-type conductivity regions of the target.
Abstract: Silicon diode array vidicon targets characterized by a silicon oxide insulator disposed between P-type conductivity regions forming discrete diodes within an N-type conductivity wafer have been made substantially immune to burn-in by the utilization of a 0,1 to 3 micron thick electrically conducting glass layer to leak charge formed on the insulator to the adjacent P-type conductivity regions of the target. Preferably the electronically conducting glass is an alkaline earth metal borate glass containing an oxide of a metal, e.g., iron, vanadium, cobalt, etc., providing ions of both a higher valence state and a lower valence state within the glass to permit regulation of the resistivity of the glass layer during fabrication of the bulk glass. To inhibit crazing of the glass layer while providing superior contact between the glass and the surface of the target, the glass layer is R.F. sputter deposited atop the target employing a sputtering atmosphere, e.g., argon, nitrogen, oxygen, selected to provide the desired resistivity in the deposited glass layer.

5 citations



Patent
19 May 1969
TL;DR: The method of bonding an optical element to a base includes as a first step the bonding of the optical elements to a metal support having substantially the same coefficient of expansion as the optical element as mentioned in this paper.
Abstract: The method of bonding an optical element to a base includes as a first step the bonding of the optical element to a metal support having substantially the same coefficient of expansion as the optical element. The metal support is then bonded to the metal base with an adhesive which cures at low ambient temperatures for allowing alignment of the optical element with respect to the metal base during the curing time of the adhesive between the metal support and the metal base.

4 citations


01 Mar 1969
TL;DR: Diffusion bonding for leaktight joints in connectors in connectors using intermediate metal system of Au-Cu-Au is studied.
Abstract: Diffusion bonding for leaktight joints in connectors using intermediate metal system of Au-Cu-Au

Patent
07 Nov 1969

Patent
01 Jul 1969
TL;DR: Silver chloride use in technique for fusion bonding of graphite to silver, glass, ceramics, and certain other metals as discussed by the authors, which can be used for graphite fusion.
Abstract: Silver chloride use in technique for fusion bonding of graphite to silver, glass, ceramics, and certain other metals

Journal ArticleDOI
TL;DR: In this paper, a composite system has been prepared by evaporating the As-S glass on the aluminum substrate kept at a temperature above the melting point of the glass under the normal pressure in N2 gas.
Abstract: A composite system has been prepared by evaporating the As-S glass on the aluminum substrate kept at a temperature above the melting point of the glass under the normal pressure in N2 gas. The bonding mechanism between glass and aluminum of the successfully obtained composite specimens was investigated. The constitution of oxide film formed on metal by anodic oxidation and chemical treatment would play an important role for wetting of metal by glass and the adherence between them. Molecular structure of the oxide film and adhesive layer at the interface was examined by means of infrared multireflection technique. The experimental results suggest that the good adherence of glass to metal is attributed to chemical bond formed between PO43– molecular groups and the As-S glass.