Showing papers on "Anodic bonding published in 1970"

Process of ion exchange of glass

Abstract: Glass articles can be strengthened by applying thereto a salt of an alkali metal, different from the alkali metal in the glass, and carrying out an ion exchange at a temperature below the strain point of the glass. The salt, which must contain an alkali metal carbonate, is deposited on the glass article as a mixture with water, or an organic solvent or both. The ion exchange is carried out for a period of time to form a compressive stress surface layer on the glass article, but for a time insufficient to provide ion exchange to a substantial degree in the interior portion of the glass and for a time insufficient to cause substantial stress relaxation of the glass in the surface layer.

Method of bonding metal to polymers with melt adhesive

Abstract: A METHOD IS PROVIDED FOR BONDING ORGANIC POLYMERS SUCH AS POLYPROPYLENE TO METALS WITH A HOT MELT ADHESIVE PREPARED FROM AN OLEFINIC INTERPOLYMER, A CARBOXYLIC FUNCTIONAL RESIN CAPABLE OF FLUXING THE METAL, AND A HYDROCARBON WAX. TECHNIQUES OF SPIN-WELDING USING THE STRUCTURAL METAL ADHESIVE ARE PROVIDED WHICH ARE PARTICULARLY EFFECTIVE IN SEALING AND BONDING BATTERY TERMINALS TO BATTERY CASES.

Perforate glass structures and method of making the same

Abstract: A channel-type electron multiplier made in the shape of a glass wafer having holes through a central portion thereof, and an imperforate glass border fused to the periphery of the wafer, the wafer glass having a thermal coefficient of expansion less than that of the border glass. In manufacture, a brief fast cooling step aids in the production of a strong, permanent bond between wafer and border.

Tungsten barrier electrical connection

Abstract: A tungsten or molybdenum electrical connector is attached to a surface of a semiconductor element adjacent an N-type region by a bonding layer comprised of aluminum. A tungsten or molybdenum refractory metal barrier layer is interposed between the bonding layer and the semiconductor surface, and thin refractory metal silicide layers are interposed between the bonding layer and the electrical connector and barrier layer. The bonding layer may be formed of an alloy of silicon and aluminum. An aluminum preform may be initially stacked between the refractory metal surfaces to form the bonding layer. The refractory metal silicide may be formed before bonding or may be formed by reaction of silicon with the refractory metal surfaces during bonding. The resulting electrical connection formed exhibits reduced internal resistance.

Bonded core structure comprising a plurality of glass coated electrical steel sheets

Abstract: An oriented silicon steel product and method for producing the same is described in which improved magnetostriction and strain sensitivity are obtained by means of bonding a thin glass layer to the surface of the steel.

Bonding head for bonding beam leaded devices to a substrate

Abstract: An improved beam leaded bonding method and head wherein a bonding surface is caused to individually and successively contact and bond each of a plurality of electrical leads projecting from around the periphery of a beam leaded device onto a substrate. A particular mechanical bonding head is illustrated for moving a bonding tool in a complex ''''wobbling'''' fashion to produce the desired individual and successive automatic lead bonding.

Semiconductor chip bonding method

Abstract: THE PRESENT INVENTION RELATES TO A METHOD AND APPARATUS FOR ALIGNING AND BONDING A SEMICONDUCTOR FLIP CHIP TO A SEMICONDUCTOR FLIP CHIP SUBSTRATE. AN ALIGNMENT DEVICE WHICH HAS AN APPROXIMATELY RIGHT-ANGLE SET OF MIRRORS IS INSERTED BETWEEN THE SOLDER BALLS OF THE SEMICONDUCTOR FLIP CHI AND THE BONDING PADS OF THE SEMICONDUCTOR FLIP CHIP SUBSTRATE, SO AS TO ALIGN THE SOLDER BALLS OF THE SEMICONDUCTOR FLIP CHIP IN RELATION TO THE BONDING PADS OF THE SEMICONDUCTOR FLIP CHIP SUBSTRATE. OPTICAL MEANS IS PROVIDED WITHIN THE ALIGNMENT DEVICE SO AS TO PRESENT THE SUPER-POSITIONING OF THE IMAGES OF THE SOLDER BALLS OF THE SEMICONDUCTOR FLIP CHIP IN RELATION TO THE BONDING PADS OF THE SEMICONDUCTOR FLIP CHIP SUBSTRATE. AFTER THE SOLDER BALLS OF THE SEMICONDUCTOR FLIP CHIP HAVE BEEN ALINGED IN RELATION THE BONDING PADS OF THE SEMICONDUCTOR FLIP CHIP SUBSTRATE, THE ALIGNMENT DEVICE IS REMOVED FROM THEREBETWEEN. SUBSEQUENTLY, THE SOLDER BALLS OF THE SEMICONDUCTOR FLIP CHIP MAY BE PRESSED AGAINST THE BONDING PADS OF THE SEMICONDUCTOR FLIP CHIP SUBSTRATE.

Deformation Characteristics and Bonding Process of Al Fine Wire in Ultrasonic Bonding

Abstract: For establishing the bonding technology in the interconnections of semiconductor devices, the ultrasonic bonding mechanism is pursued from the viewpoints of plastic deformation on Al fine wires and the states of peeled surfaces after bonding with their relations to bonding strength, when bonding to Al-evaporated films and Au-plated surfaces. The results are as follows : (1) Plastic deformation of the wire is influenced by the material properties, the film thickness and the microscopic irregularities of the surfaces being bonded. (2) Its deformation characteristics are classified into slipping on bonded surfaces, adhesion and restriction on their interface and slipping of a tool tip on the bonded surface. The extent in deformation is different in each stages. (3) Bonding strangth is dependent on the adhesion between the metals on the interface, which is affected by the microscopic irregularities on the bonded surfaces as well as by the bonding factors. (4) Plastic deformation of the wire correlates with the behaviors of restriction on the bonded surfaces in the course of bonding. (5) The true metallic contact on the interface formed by plastic flow and the temperature rise due to friction contribute to the progress in the bonding process, while the metal diffusion makes the bonding accomplish.

A simple technique for sealing metals to stabilized zirconia by means of glass seals

Abstract: A simple technique for sealing stabilized zirconia tubing has been devised, which has excellent mechanical and gas tightness properties. The seal is formed by bonding a suitable nickel-iron alloy with zirconia by means of a soft glass layer.