Showing papers on "Anodic bonding published in 1976"

Susceptor based bonding technique for plastic material utilizing oleaginous substance at the bonding interface

Abstract: A film of an oleaginous substance is interposed between the surfaces of plastic elements to be joined by a thermal bond. The heat necessary for bonding is obtained by the incorporation of heat generating particles in the bond region, either in the plastic element or in the film. The particles are indirectly heatable by a high frequency alternating magnetic field or other suitable field. This provides a rapid and efficient heating of the surfaces to the bonding temperature, with the oleaginous substance enhancing the bonding action and the properties of the bond.

Glass bonding of manganese-zinc ferrite

Abstract: A method of minimizing or eliminating reactions between a surface of manganese zinc ferrite and a glass bonding composition applied thereto is disclosed, wherein a barrier layer is formed upon the manganese zinc ferrite surface prior to the application of the glass bonding composition. The barrier layer is a chromium layer about 3 - 170 microinches thick. The resulting product is suitable for use in radio frequency recording apparatus, and especially for multi-core magnetic heads.

Surface coating method employing a temporary bonding

Abstract: A method of coating which involves applying to a surface a dispersion containing a main bonding agent and a temporary bonding agent. The main bonding agent is not film forming at room temperature. Next the continuous phase of the dispersion is permitted to evaporate or is driven off, followed by precipitation of the main bonding agent and the temporary bonding agent to form a porous powder layer on the surface. The temporary bonding agent bonds the main bonding agent to the surface. The porous layer is then exposed to a solvent which causes the particles of the bonding agents to flow together, and any excess solvent is removed.

Bonding for crystal base

Abstract: PURPOSE: To enable the bonding with high precision without developing wedges in the bonding layer, by placing the semiconductor base on the upper surface of the bonding plate on which grooves of grid shape are formed thru the bonding wax and by heating thru the depression of molding board on this. COPYRIGHT: (C)1978,JPO&Japio

An Evaluation of Silicon Damage Resulting from Ultrasonic Wire Bonding

Abstract: Ultrasonic wire bonding is a dynamic process which has been found to introduce material damage to improperly protected silicon. Damage is detected through the generation of steam oxidation induced stacking faults in the silicon after the metal and oxides have been removed. Silicon of both (100) and (111) orientations were evaluated with faulting being found predominately on those (111) planes whose lines of interesection with the surface were most nearly perpendicular to the applied direction of ultrasonic motion. Stacking faults predominate at the outer periphery of the bond. In addition to a correlation between the direction of ultrasonic motion and the fault planes observed, different fault planes operate at the toe and heel of the bond. No stacking faults are induced for normal ultrasonic bonding parameters and standard thicknesses of metallization (10 KA) using 2-mil bonding wire. This method of analysis provides a means for evaluating changes in materials and processing to improve bond reliability.

Process for the treatment of glass by metal migration

Abstract: A process for the treatment of glass to modify various properties thereof. The process comprises the steps of applying a coating of at least one metal, preferably by vapor deposition, onto the surface of a SiO2 containing glass. The coated glass is thereafter heated to a temperature sufficient to cause the metal to migrate from the surface of the glass into the glass without any residue or coating remaining on the surface of the glass.