Showing papers on "Anodic bonding published in 1979"

Capacitive pressure sensor

Abstract: A capacitive pressure sensor is provided which has a conductive silicon diaphragm having a thick supporting portion at the periphery thereof and a thin inner deflecting portion which is reduced in thickness from the supporting portion by means of an etching process which makes possible a very accurate dimensioning of the hollow formed by the deflecting portion of the diaphragm. A substrate of borosilicate glass has a flat surface which is placed against the side of the diaphragm in contact with the supporting portion and the two elements are joined by a process of anodic bonding so that a pressure chamber is formed between the substrate and the thin deflecting portion of the diaphragm. Within the pressure chamber, a thin electrode is provided on the surface of the substrate thereby forming electrostatic capacity between the substrate and the diaphragm and a hole is provided through the substrate for supplying of fluid into the pressure chamber.

Semiconductor absolute pressure transducer assembly and method

Abstract: A semiconductor pressure transducer assembly comprising a silicon diaphragm assembly and a glass covering member. The silicon diaphragm assembly has a circular diaphragm portion of thin silicon which is formed using etching, and a thick supporting portion therearound. Piezoresistive elements of a piezoresistive bridge circuit and conducting paths for electrically connection thereof are formed on the silicon diaphragm assembly. On a surface of the silicon diaphragm assembly, a passivating layer of silicon dioxide are formed in uniform thickness, and further on a surface of the passivating layer is formed a layer of polysilicon on the supporting portion of the silicon diaphragm assembly. In the passivating layer, a contacting window is formed, through which the polysilicon layer is electrically connected to the silicon diaphragm assembly. The covering member of borosilicate glass having a circular well is mounted and bonded onto the silicon diaphragm assembly in contact with the polysilicon layer using Anodic Bonding method. And the processed silicon diaphragm assembly has a flat surface thereof, on which the piezoresistive elements and the conducting paths are constructed using Ion Implantation method, or reforming a silicon dioxide layer thereon after removing another silicon dioxide layer used as mask in diffusing process.

Semiconductor pressure sensor having plural pressure sensitive diaphragms and method

Abstract: A semiconductor pressure sensor having plural pressure sensitive diaphragms and capable of producing electric signals of at least two pressures. A semiconductor pressure sensor has a semiconductor single crystal chip (1) on which two diaphragms (12a, 12b) are shaped, pairs of strain gauges (13a and 14a, and 13b and 14b), each of which pairs are constructed on each pressure sensitive diaphragm, electrodes (15a and 16a, and 15b and 16b) which are provided for electrical connections of these strain gauges on the semiconductor single crystal, and an insulating substrate of borosilicate glass, the thermal expansion coefficient is substantially equal tol that of said semiconductor single-crystal chip, wherein the semiconductor single-crystal chip (1) and the glass substrate (2) are bonded to each other by an Anodic Bonding method, thereby being able to obtain a semiconductor pressure sensor which scarcely producing errors outputs.

Electro-optically assisted bonding

Abstract: A method of bonding a cover glass to a semiconductor substrate having conductors thereon. The cover glass and the semiconductor substrate are placed in a relatively high voltage field and heated to induce ion drift in the glass and improved conductivity in the substrate. Additional localized heating softens the cover glass in the vicinity of the conductors permitting the cover glass to flow around the conductors and to be drawn into contact and bonded with the substrate.

Bonding composition and microwave process for bonding together plastic components

Abstract: A bonding composition comprised of a plastisol and from 10 to 100 parts by weight per 100 parts by weight of vinyl polymer resin in the plastisol of a polar material having a dielectric constant above 35 at 20° C. is used for bonding together plastic components, such as vinyl polymer components. The bonding composition is interposed between and in contact with the plastic components which are to be bonded together. Then, the composite structure is exposed to electromagnetic energy having a wave length between about 0.001 to 0.3 meter for about 1/4 minute to 5 minutes. The electromagnetic energy heats the bonding composition to a temperature at which fusion of the bonding composition occurs and to a temperature sufficient to cause melting of the surfaces of the plastic components in contact with the bonding composition. Upon cooling the composite structure, a strong bond between the components has occurred.

Pressure sensitive apparatus

Abstract: A pressure transducer comprising a silicon diaphragm on which a semiconductor strain gauge is formed and which has a diaphragm portion deformable in response to a pressure, an insulating support which is made of borosilicate glass having the silicon diaphragm rigidly mounted thereon and which is provided with a pressure introducing hole in its central part, a metallic support which is cylindrical, which is made of an iron-nickel alloy similar in the thermal expansion coefficient to the borosilicate glass and on which the glass insulating support is rigidly mounted, and a metallic housing within which the integrated structure consisting of the silicon diaphragm, the glass insulating support and the metallic support is arranged; the silicon diaphragm, the insulating support and the metallic support being joined by the anodic bonding, the metallic support being rigidly welded to the metallic housing at its lower end part.

A Low-Cost Solar-Cell Front Contact Using Trapped Silver Mesh and Electrostatic Bonding

Abstract: One of the major costs of modern solar-cell manufacture is that of applying a metallized contact grid to the cell front surface. If solar energy is to become a viable source of !ow-cost electricity, this expense must be reduced significantly. To keep efficiency high, a metallization grid must provide narrow closely spaced high conductivity lines. A new system to provide this contact with a silver mesh trapped between the cell and an encapsulating glass cover has been demonstrated. Borosilicate glass is permanently joined to the cell by electrostatic bonding, an adhesive-free field-assisted glass-metal sealing technique. During this process the glass is deformed around the silver mesh to form a permanent optically coupled integral bond to the cell. This hermetic seal prevents the silver from oxidizing and destroying the electrical contact formed during the bonding process. Cells produced this way have been demonstrated with curve fill factors of 0.69. A thin titanium layer evaporated on the mesh seems to improve the results. Specific contact resistance measured for this system is on the order of 20-30 m \Omega -cm 2 .

Manufacture of seal bonding material

Abstract: PURPOSE: To cheaply obtain a seal bonding material making striking as conventional pretreatment for Ag plating unnecessary by cold working an Fe-Ni-Co type seal bonding alloy of a specified composition followed by heat treatment in a reducing atmosphere at a specified temp. for a specified time. CONSTITUTION: An Fe-Ni-Co type seal bonding alloy consisting of Ni 26W32wt% Ni, 15W19wt% Co and the balance Fe is cold worked and heat treated in a reducing atmosphere at 480W650°C for 25min or more to obtain a seal bonding material making striking as conventional preteratment for Ag plating unnecessary and extremely improving the adhesion of Ag plating in a process of manufacturing seal bonding parts. This material simplifies a plating process, considerably reduces the cost of manufacturing seal bonding parts, and is favorably uses as a seal bonding material for lead frames of a semiconductor integrated circuit device, etc. without producing a strain. COPYRIGHT: (C)1981,JPO&Japio

Ink jet head structure

Abstract: An improved ink jet print head structure The print head includes a cylindrical glass rod having a bore extending along the axis of the rod A surface is ground on the rod parallel to and near the bore A metal organic paste is fired on the surface and a piezoelectric driver plate is soldered to the paste A silicon nozzle plate is bonded to the front of the rod by means of an anodic bonding technique The head structure may be attached to a charging electrode by means of an insulating support member, resulting in a prealigned and easily replaceable unit Several alternative embodiments of the head structure and means for attaching the structure to an input line are disclosed

Semiconductor pressure sensors having a Plurality of pressure-sensitive diaphragms and method of manufacturing the same

Abstract: A semiconductor pressure sensor having a plurality of pressure-sensitive diaphragms so as to deliver outputs of at least two kinds of pressures as electric signals. This semiconductor pressure sensor comprises a monocrystalline semiconductor chip (1) formed thereon with at least two pressure-sensitive diaphragms (12a, 12b), a pair of strain gauges (13a and 14a, or 13b and 14b) formed on each pressure-sensitive diaphragms of the monocrystalline semiconductor chip, electrodes (15a and 16a, or 15b and 16b) provided on the monocrystalline semiconductor chip to electrically connect the strain gauges with each other, and a substrate (2) of borosilicate glass having the coefficient of thermal expansion, which is substantially equal to that of the monocrystalline semiconductor chip, said monocrystalline semiconductor chip (1) and said glass substrate (2) being bonded together by means of an anodic bonding process. According to this invention, there may be provided the pressure-sensitive sensor has a reduced output error.

Method of fabricating semiconductor device by bonding together silicon substrate and electrode or the like with aluminum

Abstract: There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.

Broadened Capabilities in Electrostatic Bonding for Solar Cell Cover Glasses.

Abstract: : This report describes the first 12 months of a program aimed at furthering the development of electrostatic bonding techniques, so that integral glass covers can be attached to a variety of solar cell types, including those with multiple-layer antireflection (MLAR) coatings, the vertical junction cell, and texture etched cells. The electrostatic bonding facility is described. Tests of electron darkening of cover glasses are discussed. Detailed results of efforts to apply integral covers to various groups of MLAR coated cells are given. Variations upon the program baseline cell are to be tested to determine their compatibility with the electrostatic bonding process. Variations in contact metallization tested to date are discussed. Other variations include junction depth, dimensions (both lateral and thickness), and inclusion of back surface fields and wraparound contacts.

Ultrasonically Activated Diffusion Bonding for Fluidic Control Assembly

Abstract: : Modified ultrasonic metal bonding equipment was used to develop a new fluidic stack assembly process. Ultrasonically activated diffusion bonding was successfully applied to aluminum laminates of different sizes (up to 1 by 1 inches), different foil thicknesses (2, 3, and 5 mils), and different number of layers (up to 18). Bonds were obtained without excessive deformation, within a few second of ultrasonic bonding time, on as-received surfaces, with special atmospheres, on commercially prepared etched foil fluidic laminate stacks. Bonds were judged good quality from visual examination of stack surfaces and edges, from electrical resistance measurements made face to face, and from photomicrographic analysis of assembly cross sections. Analysis of the bonding system led to establishment of fundamental bonding parameters and equipment requirements for assembly of larger and thicker stacks. Investigation of the use of increased ultrasonic power for assisting the diffusion bonding of fluidic elements verified the fact that increased areas and/or thickness of laminates can be joined, but that dedicated tooling must be developed to assure the success of the process development.