scispace - formally typeset
Search or ask a question

Showing papers on "Anodic bonding published in 1985"


Proceedings ArticleDOI
01 Jan 1985
TL;DR: A silicon wafer bonding process is described in this paper, in which only thermally grown oxide is present between wafer pairs, and it is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Abstract: A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum. The proposed bonding mechanism is polymerization of silanol bonds between wafer pairs. A preferential etch-back process is used to produce Silicon-on-insulator (SOI) whose electrical quality is equal to that of bulk silicon. Capacitor measurements show a 27 µsec minority carrier lifetime and low Q ss at the SOI-"bottom oxide" interface, in addition, there is negligible charge within the bonding oxide. N-channel and p-channel FET devices show threshold voltages and mobilities equal to bulk controls. The subthreshold leakage is less than 1 fA per micron of channel width.

118 citations


Journal ArticleDOI
TL;DR: In this paper, anodically bonded silicon wafers were examined with infrared and ultrasonic transmission microscopy for bond quality and small scattered non-bonded zones comprising on the average 5% of the total wafer area were found.
Abstract: Dielectrically isolated silicon was produced by anodically bonding together a pair of silicon wafers whose surfaces were covered with an electrically nonconductive micron layer of thermally grown oxide. Although anodic bonding normally requires a conductive oxide, anodic bonding works with nonconductive silicon oxide if the total layer of silicon oxide is less than ten microns thick. The time needed for the anodic bonding process decreases monotonically with temperature because the increase in the deformability of silicon oxide overcomes the decrease in the maximum permissible anodic bonding voltage with temperature. However, factors such as silicon degradation and electrode reactions at very high temperatures indicate that a compromise temperature range of 850–950 °C is best for the anodic bonding of silicon oxide. Bonding voltages of 30–50 V for times of about an hour produced the best bonding yields at these temperatures. Anodically bonded silicon wafers were examined with infrared and ultrasonic transmission microscopy for bond quality. Small scattered nonbonded zones comprising on the average 5% of the total wafer area were found in all wafers. These nonbonded zones were the result of dust particles, entrapped gas, and dimensional mismatches between multiple bonding fronts.

82 citations


Patent
16 Dec 1985
TL;DR: In this paper, a metal interconnect with a vertical run and a lateral run is used to separate the active region of a semiconductor device from the active regions of the substrate.
Abstract: Semiconductor devices having bonding pads formed over active regions on the device are fabricated by providing protective layers between the bonding pad and the underlying active region(s). The first protective layer is formed from a polyimide material which can absorb shock resulting from tape automated bonding of the bonding pad. The second protective layer is formed from a puncture-resistant material, such as a plasma nitride, which will prevent penetration of the bonding pad resulting from the downward force applied during tape automated bonding. The bonding pad is connected to active regions or metallization pads on the device substrate by a metal interconnect having a vertical run and a lateral run. The vertical run penetrates the protective layers as well as any passivation layers which may be present, while the lateral run provides an offset for the bonding pad. In this way, the bonding pad and the active region of the substrate will be separated by the protective layers.

65 citations


Patent
11 Oct 1985
TL;DR: In this paper, an RF-sensitized bonding film or sheet is inserted at an intermediate position adjacent to the multiple materials to be bonded, and exposed to a dielectric field for such period of time so as to effect fusion or sintering of the RF-sensitive bonding film to the various materials.
Abstract: Multiple materials are bonded together by means of an RF-sensitized bonding film or sheet, wherein the RF-sensitized bonding film or sheet is inserted at an intermediate position adjacent to the multiple materials to be bonded, and exposed to a dielectric field for such period of time so as to effect fusion or sintering of the RF-sensitized bonding film or sheet to the multiple materials so as to bond the multiple materials together and form a laminated structure.

34 citations


Patent
Rafael N. Kleiman1
24 Jun 1985
TL;DR: In this paper, an electric field assisted method for bonding one glass (or other inorganic insulator) body, typically a plate, to a similar body, such that the two bodies are spaced apart, is described.
Abstract: Disclosed is an electric field-assisted method for bonding one glass (or other inorganic insulator) body, typically a plate, to a similar body, such that the two bodies are spaced apart. The interior volume of such a composite body is advantageously filled with liquid crystal material, to produce a liguid crystal display cell. The method comprises forming a patterned layer of an appropriate bonding material (e.g., Al, Ge, Si, preferably Si) on a major surface of one of the two insulator bodies, placing a major surface of the second insulator body into contact with the bonding material, heating at least the second body to a bonding temperature (typically in the range 250°-600° C.), and applying a voltage (e.g., 500-1500 volt DC, the second body negative) across the thus formed sandwich. This procedure results in formation of a strong bond between the bonding material and the second body, does not require electrical contact to the bonding material, permits the bonding of bodies whose coefficients of thermal expansion differ substantially from that of the bonding material, and can produce liquid crystal cells of closely controlled, uniform cell thickness.

23 citations


Patent
30 Apr 1985
TL;DR: In this paper, a structure such as a capacitive transducer utilizing two or more layers of semiconductor material where a highly insulating low capacitance bond is achieved by the invention between two adjacent layers by forming an inlay of glass in one layer and anodically bonding the other layer to the polished surface of the previously formed inlay.
Abstract: A structure is provided, such as a capacitive transducer, utilizing two or more layers of semiconductor material wherein a highly insulating low capacitance bond is achieved by the invention herein between two adjacent layers by forming an inlay of glass in one layer and anodically bonding the other layer to the polished surface of the previously formed inlay.

22 citations


Patent
21 Oct 1985
TL;DR: An antireflection coating and a top contact pattern comprised of a thin layer of cerium covered by a layer of silver are applied to the front surface of the basic thin solar cell structure of U.S. Pat. No. 4,338,481 as discussed by the authors.
Abstract: An antireflection coating and a top contact pattern comprised of a thin layer of cerium covered by a layer of silver are applied to the front surface of the basic thin solar cell structure of U.S. Pat. No. 4,338,481. The contact pattern contains platforms for bonding to similar metallized platforms formed on the underside of a top cover glass. The top cover glass also comprises underside peripheral metallization for bonding to a similar bottom cover glass. After bonding of the top cover glass to the solar cell by laser welding or thermocompression bonding, the epitaxial layer at the back of the cell is thinned to a thickness of about 2 microns. The rear surface of the solar cell is then antireflectively coated, contacted, and bonded to a similarly prepared bottom cover glass, the top and bottom cover glasses being bonded and sealed at their peripheries. The bottom cover glass may also be ground and silvered so as to form a diffusive back side reflector.

19 citations


Patent
20 Mar 1985
TL;DR: In this paper, a method was proposed to avoid any defective bonding operation by a method wherein, when wire bonding operation is performed using a coating wire, after finishing the first bonding operation, specified length of wire is detected with the wire inserted into a bonding tool as it is and then the coating material is removed by heating before starting the second bonding operation.
Abstract: PURPOSE:To avoid any defective bonding operation by a method wherein, when wire bonding operation is performed using a coating wire, after finishing the first bonding operation, specified length of wire is detected with the wire inserted into a bonding tool as it is and then the coating material is removed by heating before starting the second bonding operation. CONSTITUTION:A lead frame 3 fitted with a pellet 2 is mounted on a bonding stage 5 and a ball formed by heating the end of a wire 4 projecting on the edge of a capillary 15 is pressure-fixed to the pad of pellet 2. Next the capillary 15 is lifted conforming to wire data while holding the wire 4 by a clamper 17; the wire 4 is immersed in hydrogen gas atmosphere and irradiated with laser beams 22a to reduce copper oxide as the coating material on wire 4 to copper. Later the reduced part 4b of wire 4 is pressed on an inner lead 3a of frame 3 to start next bonding operation. Through these procedures, any coating material 4a may not be left at all on the lead 3a making no bonding operation defective.

12 citations


Patent
07 Feb 1985
TL;DR: In this paper, a structure for use in a X-ray membrane (pellicle) mask is provided in which anodic bonding of layers is employed, which provides a permanent bond between the layers, has zero thickness and provides substantial improvements in the obtained flatness of the mask.
Abstract: @ A structure for use in a X-ray membrane (pellicle) mask is provided in which anodic bonding of layers is employed. Anodic bonding as used here provides a permanent bond between the layers, has zero thickness and provides substantial improvements in the obtained flatness of the mask by eliminating conventional glue for attachment. By applying a voltage between a layer, such as silicon, and a glass plate, and simultaneously heating both elements a permanent bond is established which is extremely flat thus providing minimum misalignment of the mask during subsequent X-ray lithography fabrication.

11 citations


Patent
24 Jun 1985
TL;DR: In this article, a method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer is described, in which sintered oxide particles are bonded with a silicon bonding phase.
Abstract: A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.

10 citations


Patent
15 Apr 1985
TL;DR: In this article, a plastic composite anti-laceration sheet is applied to a glass substrate sheet and a glass cover sheet having substantially the same curvature as the substrate sheet is used to press it into bonding engagement with the substrate.
Abstract: A unique method for producing an anti-lacerative glass assembly wherein a plastic composite anti-laceration sheet (18) is to be bonded to a glass substrate sheet (14). The plastic anti-laceration sheet includes an inner layer of polyvinyl butyral (20) adapted to abut the glass substrate sheet, an intermediate layer (22) of polyester, and an outer layer (24) of abrasion resistant material. A glass cover sheet (30) having substantially the same curvature as the glass substrate sheet is utilized to press the anti-laceration sheet into bonding engagement with the glass substrate sheet. In accordance with the present invention, the bonding operation is accomplished by heating the laminated glass assembly a predertermined temperature in the range of 285oF to 305oF. It has been found that such a temperature must be sufficiently high to cause the intermediate layer of polyester to bond to the inner layer of polyvinyl butyral, and to cause the inner layer of polyvinyl butyral to bond to the glass substrate sheet, and must be sufficiently low to prevent crazing of the abrasion resistant coating. The present invention also concerns the use of a unique vacuum ring construction which is mounted about the periphery of the laminated assembly and is utilized to de-air the assembly. The vacuum ring (36) is provided with a check valve (38) to maintain the vacuum within the ring during periods wherein it is disconnected from a vacuum source. Further, the method of the present invention includes the step of removing a selected portion or portions of the anti-laceration sheet after it has been bonded to the glass substrate sheet to provide an exposed glass surface for use in mounting the glass assembly into an associated frame.

Patent
28 Jan 1985
TL;DR: In this paper, a photoetching process on the electrode formation of a bonding pad electrode in a semiconductor or partially shaping SiO2 glass was proposed to improve the bondability.
Abstract: PURPOSE:To improve bondability by forming a bonding section in irregular structure. CONSTITUTION:Irregular sections are formed by selectively removing a bonding section in a photoetching process on the electrode formation of a bonding pad electrode in a semiconductor or partially shaping SiO2 glass, etc. to the lower section of a pad before the electrode formation. Accordingly, since the bonding section is shaped in irregular structure, mutual contact areas between bonding can be increased, thus improving bondability.

Patent
02 Dec 1985
TL;DR: A glass coating is provided on a substrate, e.g. an integrated circuit, by pulse heating the substrate provided with the glass to a temperature at which the glass becomes fluid.
Abstract: A glass coating is provided on a substrate, e.g. an integrated circuit, by pulse heating the substrate provided with the glass to a temperature at which the glass becomes fluid. The glass viscosity is determined by control of an atmosphere in which heating is effected. Typically this atmosphere includes oxygen or water.

Patent
28 Jan 1985
TL;DR: In this article, the authors proposed a method to extremely lessen the conductive resistance of a wiring substrate and to enable to perform a highly reliable connection of the wiring substrate with a semiconductor integrated circuit chip by a method wherein a bonding agent layer obtainable by dispersing low-melting point metal particles in an insulative bonding agent is provided.
Abstract: PURPOSE:To extremely lessen the conductive resistance of a wiring substrate and to enable to perform a highly reliable connection of the wiring substrate with a semiconductor integrated circuit chip by a method wherein a bonding agent layer obtainable by dispersing low-melting point metal particles in an insulative bonding agent is provided between the conductive patterns and the conductive materials to corespond to the conductive patterns, both of the conductive patterns and the conductive materials are pressed and heated and are electrically connected, and after that, both of the conductive patterns and the conductive materials are cooled to the prescribed temperature in a state being pressed. CONSTITUTION:A release sheet is peeled off from a coupling sheet and a bonding agent layer 5 using the release sheet as its supporting material is placed on parts of the surfaces of conductive leads 4, 4... on a substrate, where the conductive leads 4, 4... should be at least connected with the bonding pads 2, 2... of a semiconductor integrated circuit chip 1, in such a way as to be continuously placed on the parts as one layer. Then, the integrated circuit chip 1 is placed on the bonding agent layer 5 in such a way that the bonding pads 2, 2... are superposed on the parts, where the bonding pads 2, 2... should be mutually connected with the conductive leads 4, 4... to correspond to the bonding pads 2, 2..., through the bonding agent layer 5, and both of the bonding pads 2, 2... and the conductive leads 4, 4... are heated and pressed. Accordingly, solder metal particles 7 are fused and crushed and both of the bonding pads 2, 2... and the conductive leads 4, 4... are soldered and are electrically connected. After that, both of the bonding pads and the conductive leads are cooled in a state that the pressing to both thereof is continued intact.

Journal ArticleDOI
TL;DR: In this paper, a new method for bonding transducers to acousto-optic devices is described which makes use of the alloying properties of gold to gallium, and is performed at room temperature in ordinary atmosphere and has excellent structural integrity with a large bandwidth.
Abstract: A new method for bonding transducers to acousto-optic devices is described which makes use of the alloying properties of gold to gallium. The bonding is performed at room temperature in ordinary atmosphere and has excellent structural integrity with a large bandwidth.

Patent
26 Jul 1985
TL;DR: In this article, a process for bonding polymeric and/or metal materials by contacting the materials with a bonding material which is a blend of a polymer which will adhere to the material to be bonded and a monoalkenylarene-diene block copolymer blended so as to form two or more partially continuous interlocking phases and heating the bonding material to form a fusion bond.
Abstract: Process for bonding polymeric and/or metal materials by contacting the materials with a bonding material which is a blend of a polymer which will adhere to the material to be bonded and a monoalkenylarene-diene block copolymer blended so as to form two or more partially continuous interlocking phases and heating the bonding material so as to form a fusion bond.

Patent
05 Dec 1985
TL;DR: In this paper, a process for production of high energy-laser mirrors having a cooling system in composite construction from monocrystalline silicon and glass, in which a finely structured system of cooling channels is etched into the underside of the mirror sheet by electrochemical etching and is fed through holes in the mirror base sheet, and the two sheets are firmly connected to one another by anodic bonding.
Abstract: The invention relates to a process for production of high-energy-laser mirrors having a cooling system in composite construction from monocrystalline silicon and glass, in which a finely structured system of cooling channels is etched into the underside of the mirror sheet by electrochemical etching and is fed through holes in the mirror base sheet, and the two sheets are firmly connected to one another by anodic bonding.


01 Oct 1985
TL;DR: In this paper, a detailed design algorithm is developed for thickness sizing of rectangular glass plates subject to pressure loads, and preliminary fracture strength data for a variety of 1 ft square glass specimens representing preprocessed and post processed sheets from current amorphous-Si module manufacturers are presented.
Abstract: Although the intrinsic strength of silicon dioxide glass is of the order of 10 to the 6th power lb/sq in, the practical strength is roughly two orders of magnitude below this theoretical limit, and depends almost entirely on the surface condition of the glass, that is, the number and size of flaws and the residual surface compression (temper) in the glass. Glass parts always fail in tension when these flaws grow under sustained loading to some critical size. Research associated with glass encapsulated crystalline-Si photovoltaic (PV) modules has greatly expanded our knowledge of glass breaking strength and developed sizeable data base for commercially available glass types. A detailed design algorithm is developed for thickness sizing of rectangular glass plates subject to pressure loads. Additional studies examine the strength of glass under impact loading conditions such as that caused by hail. Although the fundamentals of glass breakage are directly applicable to thin film modules, the fracture strength of typical numerical glass must be replaced with data that reflect the high temperature tin oxide processing, laser scribing, and edge processing peculiar to thin film modules. The fundamentals of glass breakage applicable to thin film modules and preliminary fracture strength data for a variety of 1 ft square glass specimens representing preprocessed and post processed sheets from current amorphous-Si module manufacturers are presented.

Journal ArticleDOI
TL;DR: The tangent spheres approach, combined with several simplifying assumptions, enables one to calculate the lattice energy, lattice constant and the density of metals as mentioned in this paper, which can be used to calculate lattice properties.
Abstract: The tangent spheres approach, combined with several simplifying assumptions, enables one to calculate the lattice energy, the lattice constant and the density of metals.