Showing papers on "Anodic bonding published in 1986"

Wafer bonding for silicon‐on‐insulator technologies

Abstract: A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum. The proposed bonding mechanism is polymerization of silanol bonds between wafer pairs. Silicon on insulator (SOI) is produced by etching away all but a few microns of one of the bonded pair. Capacitor measurements show a 27 μs minority‐carrier lifetime and no degradation of the SOI‐insulator interface. In addition, there is negligible charge at the bonding interface making the technique attractive for three‐dimensional as well as planar SOI applications.

Silicon‐to‐silicon direct bonding method

Abstract: It was found that strong bonding takes place when a pair of clean, mirror‐polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6 Ω/cm2. Bonding p‐type silicon to n‐type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial‐like lattice continuity at the interface.

Method of making silicon capacitive pressure sensor with glass layer between silicon wafers

Abstract: A method of bonding two silicon wafers each having a capacitive plate. Two highly-doped electrically semiconductive feedthrough paths are formed through one wafer, each path contacting one of the capacitive plates. A glass layer is formed on one of the silicon wafers where bonding is desired between the two wafers. The glass layer is anodically bonded to the other of the silicon layers.

Die bonding process

Abstract: A process for bonding silicon die to a package. This process comprises the following steps: (a) providing to the back surface of the die an adhesion layer of material which exhibits superior adhesion to both the silicon die and a subsequently applied barrier layer; (b) providing to the adhesion layer a barrier layer which is impervious to silicon; (c) providing to the barrier layer a bonding layer; and (d) bonding the die to the package by activating a binder composition disposed at the interface of the package and the bonding layer. The barrier layer prevents the migration of silicon to the bonding layer, both at the time of application of the bonding layer to the die and at the time of bonding the die to the package. The adhesion layer enhances the adhesion of the barrier layer material to the back surface of the die. Titanium is the preferred adhesion layer material while tungsten is the preferred barrier layer material. The bonding layer preferably comprises gold while the preferred binder composition is a gold-tin alloy solder. The enhanced adhesion of the barrier layer which prevents silicon migration into the gold produces highly reliable bonds. In another embodiment, a stress relief layer is interposed between the adhesion layer and the back of the silicon die. The material of the stress relief layer is alloyed to the silicon at the back surface of the die which relieves stresses in the die and enhances the planarity of the back surface. This produces bonds which exhibit superior electrical and thermal contact characteristics.

Method of bonding copper and resin

Abstract: A method of bonding copper and a resin together is disclosed which comprises forming a copper oxide layer on the surface of copper to be bonded to a resin, reducing the copper oxide layer to metallic copper with a reducing solution, and bonding the metallic copper and the resin together. According to this method, a good acid resistance of the bonding interface and a sufficiently high bonding strength can be obtained.

Method of strengthening glass article formed of float glass by ion exchange

Abstract: The invention relates to a method of strengthening a glass article formed of sheet glass produced by the float process The strengthening method includes a known ion exchange treatment to replace alkali metal ions in the surface layers of the glass with, eg, alkali metal ions larger in ionic radius such as potassium ions To prevent warping of the glass article during the ion exchange treatment by the influence of a metal element such as tin used as the molten metal in the float process and diffused into one surface of the sheet glass, the glass article is pretreated by contacting at least said surface with an external source of sodium ions and/or lithium ions and heating the glass article together with the external source of the alkali metal ions at 350°-650° C for 001-100 hr The pretreatment is neither preceded nor followed by grinding or polishing of said surface of the glass By incorporating the pretreatment, the ion exchange strengthening can be accomplished to a high degree without degrading flatness and surface smoothness of the glass even when the glass thickness is not more than about 3 mm

1800V bipolar-mode MOSFETs: A first application of silicon wafer direct bonding (SDB) technique to a power device

Abstract: 1800v and 1700v non-latch-up Bipolar-Mode MOSFETs have been developed, based on Silicon Wafer Direct Bonding (SDB) technique: a new substrate wafer fabrication process superior to conventional epitaxy. The SDB technique easily realizes an optimum N buffer structure as well as a high resistivity N-layer. Self-aligned deep P+diffusions, densified hole bypasses and an amorphous silicon resistive field plate have been implemented. 0.45µsec fall-time and more than 100A maximum current capability have been successfully realized.

Silicide to silicon bonding process

Abstract: A process for forming a bonding layer comprising amorphous silicon, titanium, chromium, or tungsten, between the silicide and the N+ polysilicon layer is disclosed The bonding layer is preferably less than 50 nm thick After the bonding layer is deposited, a silicide layer is deposited and the wafer is then sintered at 900°-1000° C for ten minutes or less

Film-type electrical element and connection wire combination and method of connection

Abstract: To form a sturdy, environmentally essentially unaffected and high-temperature resistance electrical connection between a connection wire (4) and a conductive track (2) on the substrate (1), a portion of the wire (4) is embedded in a unitary bonding element (3). The bonding element comprises about 70% of metal particles and 30% of glass particles to form a bonding spot. The bonding spot is made by applying a paste of glass and platinum powder, with the glass powder having a grain size several times larger than the platinum powder on the conductive track (2), pressing the end portion of the connection wire (4) into the spot so that the wire will be completely surrounded, and then firing the bonding spot. If the conductive track (2) is applied by film technology, firing of the conductive track (2) and of the bonding spot (3) can be carried out in a single operating step. Preferably, the conductive track and the bonding spot (3), as well as the connecting wire (4), have temperature coefficient-compatible components which, preferably, are similar or the same. The conductive track may be a temperature raising resistor (R).

Process for connecting components made of a dispersion-hardened superalloy using the pressure-bonding method

Abstract: Components made of a dispersion-hardened superalloy are connected together by pressure bonding, the individual parts previously processed at their bonding surfaces only by milling, without fine machining such as grinding, electro-polishing, etc., being subjected before bonding to a heat treatment in the temperature range of between 60° C. and 210° C. below the recrystallization temperature for the purpose of reducing the driving force. During the subsequent coarse-grain heat treatment of the bonded workpiece, no sort of fine crystalline banding occurs in the bonding zone and the strength of the workpiece corresponds to that of the material before bonding.

Automatic bonding device of wafer and ring

Abstract: PURPOSE: To automate the wafer bonding process on a ring using a bonding tape by a method wherein a ring is mounted on a tape bonding base while a wafer is mounted on a wafer adsorbing base to actuate a bonding unit so that a bonding tape with its bonding face looking downward may be bonded on the wafer and the ring by a bonding roll. CONSTITUTION: The four procedures as mentioned below are full automatically performed i.e. 1) a ring 2 located on a specified position passing through a loading base 1 and a guide base 7 as well as a wafer 53 located in a specified direction by an alignment means 57 are mounted on a tape bonding base 27 and a wafer adsorbing base 32 located on the central part of base 27; 2) a bonding tape is bonded on the ring 2 and the wafer 53 using a bonding roll; 3) successively the bonding tape is circularly cut out on the ring 2; and 4) the circularly cut out bonding tape is peeled off and wound up. Furthermore, the element forming surface of wafer 53 is made looking downward by a wafer reversing means 8 while a wafer protective tape 40 is bonded on the wafer adsorbing base 32 not to be damaged by any foreign matters. Besides, the ring 2 bonded with the wafer 53 is reversed by an other reversing means 129 to facilitate the succeeding processes. COPYRIGHT: (C)1987,JPO&Japio

A method for bonding ceramics to each other or a ceramic to a metal

Abstract: A three-layer clad plate or a laminated sheet comprising a core piece made of aluminum or its alloy and surfaces made of an aluminum-silicon alloy is inserted between the bonding surfaces of ceramics or between the bonding surface of a ceramic and that of a metal. The resulting structure is maintained at a bonding temperature lower than the melting point of aluminum or its alloy and higher than the solidus of the aluminum-silicon alloy while pressurizing the inserting material, thus bonding the ceramics to each other or the ceramic to the metal.

Pressure transducer with sealed conductors

Abstract: A pressure transducer (10; 10') having a silicon diaphragm (14; 14') and an insulating glass base (11; 11') Surfaces (16, 12; 16', 12') of the diaphragm and glass base are anodically bonded together to form a hermetic seal for an internal reference cavity (24; 24') therein and also to provide hermetic protection for critical areas (70, 77; 70', 80, 81) on the silicon diaphragm A plurality of semiconductor components are synthesized in an area (70; 70') in the silicon diaphragm A plurality of conductors (71-73; 71'-73') are embedded (sealed) in the glass base so as to provide external electrical access to the semiconductor components without disrupting the hermetic seal provided between the silicon diaphragm and the glass base This occurs by virtue of embedded pins (71-73; 71'-73') in the glass base extending between top and bottom surfaces (12, 13; 12', 13') of the glass base with flat ends of these pins, which ends are coplanar with the base surfaces to be anodically bonded, forming a silicon gold eutectic with bonding pads (77; 77') on the silicon diaphragm during anodic bonding The bonding pads are within outer peripheral areas (18; 18') of a bottom surface (16; 16') of the silicon diaphragm that are hermetically bonded to outer peripheral areas (22; 22') of a top surface (12; 12') of the glass base during the anodic bonding process

Silicon Substrates for Chip Interconnection

Abstract: Through the use of silicon‐on‐silicon packaging, VLSI chips can be interconnected by dense contacts and very fine conductor lines. Electrical and thermal properties obtained by means of this technique are discussed. The fabrication of small cooling channels in the silicon substrate and the application of the anodic bonding technique for chip mounting are demonstrated.

Method for bonding anode

Abstract: PURPOSE: To eliminate the connection of positive electrode pin to a silicon pressure sensitive element and to be able to uniformly bond an anode by applying a reverse voltage to a voltage applied in case of bonding the anode to a surface where the anode bonding is completed. CONSTITUTION: A second electrode plate 56 is connected in contact with the opposite surface 22 of a base 20 to its bonding surface 12 and a first electrode plate 55 is connected in contact with the surface 33 of a cap 30 oppositely to the bonded surface 13. A DC voltage of approx. 800V is applied by a DC power source 70 with the plate 55 as an anode and the plate 56 as a cathode while heating members in vacuum at 350°C in first step. At this time, a bonding current flows at the bonding surface 12 of a silicon pressure sensitive element 10 and the base 20 to generate an SiO 2 , thereby completing a bonding. Then, the polarities of the plates 55, 56 are switched by a switching unit 80, and when a DC voltage of approx. 800V is applied to the members while heating them in vacuum at 350°C, the base 20 operates as a mere conductor, and the element 10 and the cap 30 are anode-bonded on the bonding surface 13. COPYRIGHT: (C)1988,JPO&Japio

Electronic device and its manufacturing apparatus

Abstract: PURPOSE:To avoid a corrosion due to a moisture by coating a bonding wire and its bonding parts with antioxidant films. CONSTITUTION:One end of bonding wires 10 consisting of copper at a pellet 8 is bonded respectively on each electrode pad 9 consisting of aluminium and respective other ends of the bonding wires 10 are also bonded on respective parts which are subjected to bonding at respective inner leads 5. Further, faces of bonding parts in a copper wire 10 and its both ends are coated with antioxidant films 3 using wire bonding apparatus.

A method for bonding ceramics to a metal

Abstract: A three-layer clad plate or a laminated sheet comprising a core piece made of aluminum or its alloy and surfaces made of an aluminum-silicon alloy is inserted between the bonding surfaces of ceramics or between the bonding surface of a ceramic and that of a metal. The resulting structure is maintained at a bonding temperature lower than the melting point of aluminum or its alloy and higher than the solidus of the aluminum-silicon alloy while pressurizing the inserting material, thus bonding the ceramics to each other or the ceramic to the metal.

Method of manufacturing a glass-bonded magnetic head having diffusion barriers

Abstract: A magnetic head (32) having a magnet core (30) of ferrite and a layer of a bonding material (28) consisting of glass in the gap-forming area of the magnet core (38). In order to ensure that on the one hand the ferrite be not attacked by the glass during the bonding process and that on the other hand the temperature adjustment during the bonding process is not too critical, double layer diffusion barriers are provided between the layer of bonding material (28) and the core parts (10) and (10'), respectively, which barriers are formed by a layer of silicon nitride (26) on the side of the bonding layer (28) and a layer of silicon oxide (24) on the side of the core parts (10) and (10'), respectively.

Solid state bonding of aluminum bronze with Si for bearing metal to austenitic stainless steel.

Abstract: Solid state bonding is genrally applied to joint of a dissimilar metal which is very difficult to bond by fusion welding techniquesIn this paper a diffusion bonding of aluminum bronze containing Si to austenitic stainless steel has been investigated The investigations were performed by both method of a direct bonding without insert metal and bonding with insert metals of Cu, phosphor bronze and Ni foils under a restrained condition or a constant bonding pressure, 094 MPa The results obtained as follows; (1) The bonding strength in the insert metal bonding was higher than that in the direct bonding and it was the highest in case of using Ni insert metal among others in the bonding temperature below 890°C A maximum strength of 410 MPa was obtained at 710°C (2) In case of using Cu insert metal, the bonding sterngth was much lower comparing to other cases, especially lower than the case of using Ni in the low temperature below 950°C, however, in the temperature of 960°C both bonding strength became almost the same (3) At the temperature of 960°C and higher than that, the optimum results were obtained with melted down phosphor bronze, it is considered that a liquid phase bonding occurred then (4) In case of using Ni insert metal, the effect of thickness differences of insert metals ranging between 10 and 60μm on the bonding strength was not recognized extending over all of the bonding temperature used On the other hand, in the Cu insert metal bonding, the bonding strength in the case of 10μm foil was higher than that of 100μm foil and the strength difference in both foils was from 50 to 100 MPa (5) The tensile fracture occurred at the boundary interface between the two base metals in the case of the direct bonding, it occurred too in the case of insert metal bonding between aluminum bronze and the insert metals such as Ni or Cu For phosphor bronze insert metal bonding fracture occurred respectively at three places which are the interfaces between aluminum bronze and the insert metal, between the insert metal and a diffusion layer produced in stainless steel side and between the diffusion layer and stainless steel

Process for manufacturing an electric circuit using hybrid technology

Abstract: A process for manufacturing an electric circuit using hybrid technology, in which at least one electric component (15) is secured by means of a bonding agent (14) in a printed circuit with tracks (11) made of a base metal which is suitable for bonding. The surfaces (17) of the base metal which are intended for the bonding process, preferably made of copper, are covered during the bonding proces and during the hardening of the bonding agent (14), which is performed at a high temperature, by a protective layer (13) which is removed before the bonding operation.