Anodic bonding

About: Anodic bonding is a research topic. Over the lifetime, 5330 publications have been published within this topic receiving 83785 citations.

Wire bonding in microelectronics : materials, processes, reliability, and yield

Abstract: Technical Introduction to the Second Edition. Ultrasonic Bonding Systems and Technologies (Including Ultrasonic Wire Bonding Mechanism). Some Aspects of Bonding Wire Characteristics That can Affect Bonding, Reliability, or Testing. Wire Bond Testing. Gold-Aluminum Intermetallic Compounds and Other Metallic Interface Reactions Encountered in Wire Bonding. Bond Failures Resulting from Gold-Plating Impurities and Conditions. Cleaning to Improve Bondability and Reliability. Mechanical Problems in Wire Bonding. High-Yield and Fine-Pitch Wire Bonding. Wire Bonding to Multichip Modules and Other Soft Substrates. Glossary. Index.

Wafer direct bonding: tailoring adhesion between brittle materials

Abstract: It is a well-known phenomenon that two solids with sufficiently flat surfaces can stick to each other when brought into intimate contact in ambient air at room temperature. The attraction between the two bodies is primarily mediated through van der Waals forces or hydrogen bonding. Without a subsequent heating step, that type of bonding is reversible. Annealing may increase the energy of adhesion up to the cohesive strength of the materials concerned. The wafer bonding phenomena in brittle materials systems, especially in silicon, is reviewed in the experiment. The focus is on low temperature bonding techniques. The pivotal influence chemical species on the surfaces have on the subsequent type of bonding (van der Waals, hydrogen, covalent bonding, mechanical interlocking) is discussed. Methods of modifying the surface chemistry for tailoring bonding properties are addressed. The paper is aimed at providing an overview of the current understanding of the factors determining the bondability and strength of the bonding obtainable. The authors assess the present state of the experimental methods for determining basic parameters governing the adhesion. A number of examples illustrate the applicability of fusion bonding for as diverse fields as opto-electronics, microsystems technology, and fabrication of advanced substrates like silicon-on-insulator wafers.

Surface activated bonding of silicon wafers at room temperature

Abstract: A method to bond silicon wafers directly at room temperature was developed. In this method, surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum. By the infrared microscope and KOH etching method, no void at the bonded interface was detected in all the specimens tested. In the tensile test, fracture occurred not at the interface but mainly in the bulk of silicon. From these results, it is concluded that the method realizes strong and tight bonding at room temperature and is promising to assemble small parts made by the silicon wafer process.

Microfabricated alkali atom vapor cells

Abstract: We describe the fabrication of chip-sized alkali atom vapor cells using silicon micromachining and anodic bonding technology. Such cells may find use in highly miniaturized atomic frequency references or magnetometers. The cells consist of cavities etched in silicon, with internal volumes as small as 1 mm3. Two techniques for introducing cesium and a buffer gas into the cells are described: one based on chemical reaction between cesium chloride and barium azide, and the other based on direct injection of elemental cesium within a controlled anaerobic environment. Cesium optical absorption and coherent population trapping resonances were measured in the cells.