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Anodic bonding
About: Anodic bonding is a research topic. Over the lifetime, 5330 publications have been published within this topic receiving 83785 citations.
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TL;DR: In this paper, the authors present a review of the vacuum packaging methods and the structures for electrical feedthrough for the interconnection on the surface of a silicon chip, which is used for bonding with intermediate melting materials, such as low melting point glass and solder.
Abstract: Wafer level packaging plays many important roles for MEMS (micro electro mechanical systems), including cost, yield and reliability. MEMS structures on silicon chips are encapsulated between bonded wafers or by surface micromachining, and electrical interconnections are made from the cavity. Bonding at the interface, such as glass–Si anodic bonding and metal-to-metal bonding, requires electrical interconnection through the lid vias in many cases. On the other hand, lateral electrical interconnections on the surface of the chip are used for bonding with intermediate melting materials, such as low melting point glass and solder. The cavity formed by surface micromachining is made using sacrificial etching, and the openings needed for the sacrificial etching are plugged using deposition sealing methods. Vacuum packaging methods and the structures for electrical feedthrough for the interconnection are discussed in this review.
322 citations
TL;DR: In this paper, a low-temperature bonding of wafers was studied utilizing reactive ion etching-mode plasma activation, where the hydrophilic Si and thermally oxidized Si wafer were exposed to N 2, Ar, or O 2 plasma prior to bonding in air or vacuum.
Abstract: Low-temperature bonding of wafers has been studied utilizing reactive ion etching-mode plasma activation. The hydrophilic Si and thermally oxidized Si wafers were exposed to N 2 , Ar, or O 2 plasma prior to bonding in air or vacuum. After plasma treatment the wafers were cleaned in RCA-1 solution and/or deionized water. Strong bonding was achieved at 200°C with all the investigated plasma gases, if proper bonding and cleaning procedures were used. Extended RCA-I cleaning deteriorated the bond strength, but a short cleaning improved bonding. We found that the activation of the thermal oxide has a larger influence on the bond strength than the activation of the native oxide surface in Si/oxide wafer pairs. We suggest that the plasma treatment induces a highly disordered surface structure which enhances the diffusion of the water from the bonded interface. As a result of the plasma exposure the number of the surface OH groups is greatly increased enabling strong bonding at a low temperature.
314 citations
TL;DR: The Smart-Cut process as discussed by the authors involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer.
Abstract: An alternative route to existing silicon on insulator (SOI) material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.
287 citations
TL;DR: In this article, the bonding speed of silicon and fused quartz wafers is measured as a function of temperature, and it is shown that the bonding process stops to operate at temperatures above 90°C and 320°C for fused quartz and bare silicon, respectively.
Abstract: The bonding speed (or contact wave velocity) of silicon and fused quartz wafers has been measured as a function of temperature. The results show that the bonding process stops to operate at temperatures above 90°C and 320°C for fused quartz and bare silicon wafers, respectively. By comparing our results to infrared spectra obtained from silica gel we develop a tentative model of the bonding process. This model is based on the assumption that the initial wafer bonding process occurs via hydrogen bonds of adsorbed water. This model explains why the bonding strength increases in two distinct steps during high temperature annealing. By introducing a phenomenological time constant τ we can also account for the fact that in an intermediate temperature range the bonding strength does not depend on annealing time as it has been reported in the literature.
274 citations
TL;DR: In this paper, the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process was systematically investigated and guidelines for void formation were presented. But these guidelines were not applicable to the case of low temperature adhesives.
Abstract: We have systematically investigated the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process. As a result of these studies we present guidelines ...
270 citations