Anodic bonding

About: Anodic bonding is a research topic. Over the lifetime, 5330 publications have been published within this topic receiving 83785 citations.

Vacuum packaging for microsensors by glass-silicon anodic bonding

Abstract: Vacuum packaging by the glass-silicon anodic process is studied. The residual gas generated during the anodic binding process and that desobed from the silicon and glass surface increase the pressure in a sealed cavity. In order to fabricate a vacuum sealed cavity, two methods are proposed to eliminate the residual gas; (i) the residual gases are evacuated through a small opening after bonding and then the opening is plugged by depositing a material in vacuum, (ii) the residual gases are absorbed by a getter inside the sealed cavity. A non-evaporable getter (NEG) is used for the second method. A vacuum sealing of tens of Torr is obtained by the firat method. The second method and a combnation of the two methids enables vacuum sealing at a pressure lower than 10-5Torr. A prototype of a capacitive vacuum sensor is fabricated by using the second method.

Three-dimensional integrated semiconductor devices

Abstract: The present invention describes a process for three-dimensional integration of semiconductor devices and a resulting device. The process combines low temperature wafer bonding methods with backside/substrate contact processing methods, preferably with silicon on insulator devices. The present invention utilizes, in an inventive fashion, low temperature bonding processes used for bonded silicon on insulator (SOI) wafer technology. This low temperature bonding technology is adopted for stacking several silicon layers on top of each other and building active transistors and other circuit elements in each one. The back-side/substrate contact processing methods allow the interconnection of the bonded SOI layers.

Stamp-and-stick room-temperature bonding technique for microdevices

Abstract: Multilayer MEMS and microfluidic designs using diverse materials demand separate fabrication of device components followed by assembly to make the final device. Structural and moving components, labile bio-molecules, fluids and temperature-sensitive materials place special restrictions on the bonding processes that can be used for assembly of MEMS devices. We describe a room temperature "stamp and stick (SAS)" transfer bonding technique for silicon, glass and nitride surfaces using a UV curable adhesive. Alternatively, poly(dimethylsiloxane) (PDMS) can also be used as the adhesive; this is particularly useful for bonding PDMS devices. A thin layer of adhesive is first spun on a flat wafer. This adhesive layer is then selectively transferred to the device chip from the wafer using a stamping process. The device chip can then be aligned and bonded to other chips/wafers. This bonding process is conformal and works even on surfaces with uneven topography. This aspect is especially relevant to microfluidics, where good sealing can be difficult to obtain with channels on uneven surfaces. Burst pressure tests suggest that wafer bonds using the UV curable adhesive could withstand pressures of 700 kPa (7 atmospheres); those with PDMS could withstand 200 to 700 kPa (2-7 atmospheres) depending on the geometry and configuration of the device.