Showing papers on "Antimonide published in 1971"

Irregular growth of AlSb in solid aluminum-solid antimony diffusion couples

Abstract: An investigation was made of the growth of the intermediate phase aluminum antimonide (AlSb) in solid aluminum-solid antimony diffusion couples, AlSb being the only intermediate phase present in the equilibrum phase diagram. Most diffusion couples were assembled from polycrystalline aluminum and antimony, but a few were made from single crystals; the diffusion couple surfaces were prepared in a variety of ways and the couples were isothermally annealed at temperatures between 450° and 615°C. It was found in all cases that AlSb nucleates at the original interface and after sufficient time coalesces into a highly irregular layer, irrespective of the details of the surface treatment. In several cases in which limited nucleation of AlSb took place, the morphology of the crystals was such as to suggest that the observed anisotropic growth was related to the zinc-blende crystal structure of the AlSb.

Thermal Conductivity of Heavily Doped P-Type Indium Antimonide at Liquid Helium Temperatures.

Abstract: The lattice thermal conductivity, \ , of three heavily doped 8 18 "3 (>10 cm ) p-type samples of InSb has been determined in the temperature range 1.3 4.2°K. The data are fitted to a phenomeno­ logical model including boundary scattering, Rayleigh scattering due to impurities and isotopes, and the scattering of phonons by charge carriers. That the charge carriers are a significant 2 source of scattering is indicated by a general T behavior at the lowest temperatures and by a rapid increase in \ at the higher 8 temperatures due to phonons which have wave propagation vectors larger than the diameter of the Fermi surface and which therefore cannot be scattered by charge carriers. A probable screening in the carrier-phonon interaction is apparent from the lowest temperature behavior of X . In general, a good fit is made with 8 the theories of charge carrier-phonon interaction developed for the treatment of ultrasonic attenuation.

Growth of aluminum antimonide in solid aluminum-liquid antimony diffusion couples

Abstract: An investigation was made of the isothermal growth of the intermediate alloy phase aluminum antimonide AlSb, at the interfaces of diffusion couples consisting either of solid aluminum and liquid antimony or of solid aluminum and of an Sb−Al alloy slightly supersaturated in AlSb. The diffusion anneals were carried out in the temperature range 635° to 655°C and for times up to 48 hr. In the solid aluminum vs liquid antimony couples, it was found that considerable dissolution of solid aluminum occurred at the solid-liquid interface before the first crystals of AlSb appeared. Subsequently, a two-phase region, consisting of AlSb crystals of greatly varying sizes interspersed throughout the liquid antimony developed between the instantaneous solid-liquid interface and the original solid-liquid interface. The results suggest that the dominant mechanism influencing the growth of AlSb in these diffusion couples is diffusional mass transport of aluminum in liquid antimony. The rapid diffusion of aluminum leads first to the dissolution of solid aluminum and saturation of the liquid antimony, and next to the growth of large discrete crystals of AlSb presumably via an Ostwald-ripening mechanism.