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Showing papers on "Antimonide published in 1979"


Journal ArticleDOI
TL;DR: In this paper, the role of Cs is clarified and the low work function is believed to derive from a Cs-Sb dipole layer, which is a modification of the Cs dipole.
Abstract: Studies of a range of alkali antimonides and high-sensitivity S20 and S25 type multialkali photocathodes have led to an improved understanding of this type of photoemitter. In particular the role of Cs is clarified and the low work-function is believed to derive from a Cs-Sb dipole layer.

14 citations


01 May 1979
TL;DR: In this paper, the authors used comparative characterization techniques for identically processed low and one gravity samples of commercially available aluminum antimonide (AlSb) and reported on gravitational influences such as density driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth-based melts of AlSb.
Abstract: Although the III-V compound aluminum antimonide (AlSb) shows promise as a highly efficient solar cell material, its semiconducting properties have not been exploited for device development due to difficulties in synthesizing a homogeneous stoichiometric compound and growing single crystals by conventional techniques. Liquid-state homogenization analysis, which examines the relative influence of gravitational flowvs interatomic diffusion, suggested that the microscopic inhomogeneities observed in commercial polycrystalline samples could be due to gravitational influences caused by large density differences between Al- and Sb-rich phases in earth based melts. Several liquid-state homogenization and solidification experiments performed on earth and a similar experiment performed during the Apollo-Soyuz Test Project mission in July 1975 verify this theoretical conclusion. Using comparative characterization techniques for identically processed low and one gravity samples of commercially available AlSb, this paper reports on gravitational influences, such as density driven convection or sedimentation, that cause microscopic phase separation and nonequilibrium conditions to exist in earth based melts of AlSb. The reported experiments have, likewise, shown that such phase separations can be greatly reduced in a low gravity environment and lead to major improvements in microscopic homogeneity of the re crystallized material.

8 citations


Journal ArticleDOI
TL;DR: In this paper, the first observation by neutron inelastic scattering of a collective elementary excitation in a metallic actinide compound was made, where the excitation was longitudinally polarized with respect to the direction of the magnetic moment.
Abstract: We report the first observation by neutron inelastic scattering of a collective elementary excitation in a metallic actinide compound. The excitation is longitudinally polarized with respect to the direction of the magnetic moment. The only other magnetic modes observed are at energies above 6 THz, and are essentially dispersionless.

1 citations



Journal ArticleDOI
TL;DR: In this article, the Darstellung der neuen Pnictide erfolgt aus stochiometrischen Gemengen der Elemente unter Ar durch Erhitzen auf 1600 K (I) bzw. 1300 K [(II, and (III)].
Abstract: Die Darstellung der neuen Pnictide erfolgt aus stochiometrischen Gemengen der Elemente unter Ar durch Erhitzen auf 1600 K (I) bzw. 1300 K [(II) und (III)].


Journal ArticleDOI
TL;DR: In this paper, the optimal conditions for preparing the surface and electrochemically depositing the metal have been determined for surface-barrier junctions of palladium on n-type gallium aluminum antimonide.
Abstract: The optimal conditions for preparing the surface and electrochemically depositing the metal have been determined for surface-barrier junctions of palladium on n-type gallium aluminum antimonide. The temperature and composition dependences of the voltage-current and voltage-capacitance characteristics of the junctions have been measured. When combined with the frequency dependence of the capacitance, these data show that, depending on the condition during formation, nearly ideal Schottky barriers are formed (i.e., a metal-intermediate layer-semiconductor system). The mechanism for current flow depends on the structure of the contact and the solid-solution composition. Anomalous barrier behavior at low temperatures is due to specific properties of the solid solution.