Showing papers on "Antimonide published in 1987"
Patent•
21 Feb 1987
TL;DR: In this article, an aluminum gallium arsenide antimonide (AAsSb) was grown on a GaSb substrate and a 4-element solution of AlGaSb which contained As was matched in grating with the substrate.
Abstract: PURPOSE:To form a crystal having excellent characteristics as a material for a photodiode or an APD by interposing an aluminum gallium arsenide antimonide crystal layer between a gallium antimonide substrate and aluminum gallium antimonide crystal layer and growing it to obtain a crystal having no solute inclusion in a hetero boundary. CONSTITUTION:4-element crystal layer 3 of AlxGa1-xAsySb1-y is grown on a GaSb substrate 1, and an AlxGa1-xSb crystal layer 2 is then grown on the layer 3. When An AlxGa1-xAsySb1-y crystal matched in grating with the substrate is grown on the GaSb substrate from 4-element solution of AlGaAsSb which contains As, since the segregation coefficient of the As is large, solution from a solid-phase side (substrate side) does not occur. Thus, a crystal which does not contain solute inclusion is grown. Then, when an AlxGa1-xSb crystal is grown on 4-element crystal of AlxGa1-xAsySb1-y, the solid-phase side (4-element crystal side) is not unstable. A crystal which does not contain solute inclusion is grown on a substrate boundary on the basis of this action.
5 citations