Showing papers on "Antimonide published in 1990"
TL;DR: In this article, the ohmic contact characteristics of nickel antimonide in n-type GaAs semiconductor circuits are evaluated using transmission line measurements and subtractive etching of the contacts is accomplished by a wet etchant system.
Abstract: The ohmic contact characteristics of nickel antimonide in n‐type GaAs semiconductor circuits are evaluated. Deposition techniques, structural, and electrical properties were studied. The structural analysis revealed a well‐defined, sharp interface of a polycrystalline nickel antimonide phase with various solid‐phase interactions at higher annealing temperatures. The sheet resistance of 1000‐A‐thick films decreased to 7–10 Ω/⧠ after annealing at 400 °C. The ohmic contact formation was demonstrated using transmission line measurements. Subtractive etching of the contacts was accomplished by a wet etchant system which was found not to attack the GaAs substrate.
4 citations
TL;DR: In this paper, the real part of the change in distribution function caused by the propagation of an acoustic wave through a semiconductor placed under a temperature gradient has been obtained from the linearised Boltzmann transport equation and the thermoelectric coefficients, which determine the drift velocity of the carriers, have been ascertained from the general equation for current density.
Abstract: The real part of the change in distribution function caused by the propagation of an acoustic wave through a semiconductor placed under a temperature gradient has been obtained from the linearised Boltzmann transport equation and the thermoelectric coefficients, which determine the drift velocity of the carriers, have been ascertained from the general equation for current density. The threshold temperature gradient for the onset of amplification of the acoustic wave has been obtained by equating the drift velocity to wave velocity. Numerical results for n-indium antimonide have been presented and compared with those obtained from the hydrodynamic approach and the scattering approach.